H5N3005LD, H5N3005LS, H5N3005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1315-0400 Rev.4.00 Nov 08, 2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 2 4 4 1 1 2 1 3 H5N3005LS 3 2 3 H5N3005LM H5N3005LD D 1. Gate 2. Drain 3. Source 4. Drain G S Rev.4.00, Nov 08, 2005, page 1 of 4 RENESAS Package code: PRSS0004AE-C (Package name LDPAK(S)-(2)) H5N3005LD, H5N3005LS, H5N3005LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 300 ±30 15 60 15 60 15 13.5 75 1.67 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Rev.4.00, Nov 08, 2005, page 2 of 4 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 300 — — 3.0 7 — Typ — — — — 12 0.210 Max — 1 ±0.1 4.5 — 0.255 Unit V µA µA V S Ω — — — — — — — — — — — — — 1300 155 50 30 30 90 15 49 8 25 0.86 190 1.3 — — — — — — — — — — 1.30 — — pF pF pF ns ns ns ns nC nC nC V ns µC Test conditions ID = 10 mA, VGS = 0 VDS = 300 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VDS = 10 V Note4 ID = 7.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 7.5 A VGS = 10 V RL = 20 Ω Rg = 10 Ω VDD = 240 V VGS = 10 V ID = 15 A IF = 15 A, VGS = 0 Note4 IF = 15 A, VGS = 0 diF/dt = 100 A/µs H5N3005LD, H5N3005LS, H5N3005LM Package Dimensions • H5N3005LD JEITA Package Code RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 Previous Code LDPAK(L) / LDPAK(L)V 4.44 ± 0.2 (1.4) Package Name LDPAK(L) 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.4 ± 0.1 • H5N3005LS JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g (1.4) 4.44 ± 0.2 (1.5) 2.54 ± 0.5 Rev.4.00, Nov 08, 2005, page 3 of 4 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 + 0.3 – 0.5 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 H5N3005LD, H5N3005LS, H5N3005LM • H5N3005LM JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g (1.4) 4.44 ± 0.2 7.8 6.6 (2.3) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(2) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 5.0 +– 0.5 1.3 ± 0.2 Ordering Information Part Name H5N3005LSTL-E Quantity 1000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00, Nov 08, 2005, page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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