Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure Epitaxial planar type PNP silicon transistor C0.5 0.9 5.5 +0.3 −0.1 1.5±0.3 6.5±0.2 5.1 +0.2 −0.1 1.0 Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. (3) 2.54 2.54 1.05 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −3 A (DC) Collector power 2SB1184 dissipation 2SB1243 PC 1 15 W W (TC=25°C) 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C ∗1 ∗1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −60 − − V Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50μA Collector cutoff current ICBO − − −1 μA VCB= −40V Emitter cutoff current IEBO − − −1 μA VEB= −4V VCE(sat) − − −1 V IC/IB= −2A/ −0.2A ∗ hFE 120 − 390 − VCE= −3V, IC= −0.5A ∗ fT − 70 − MHz Cob − 50 − pF Parameter Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/3 Conditions IC= −50μA VCE= −5V, IE=0.5A, f=30MHz VCB= −10V, IE=0A, f=1MHz 2010.02 - Rev.C 2SB1184 / 2SB1243 Data Sheet Packaging specifications and hFE Taping Package TL TV2 2500 2500 Code Type hFE 2SB1184 QR 2SB1243 QR Basic ordering unit (pieces) − − hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves −2 Ta=100°C 25°C -25°C −0.2 −0.1 −0.05 −5mA −0.5 0 0 −2 −3 1k Ta=25°C DC CURRENT GAIN : hFE VCE=−5V 100 50 −3V 20 10 5 Ta=100°C 25°C −25°C 200 100 50 20 10 5 2 2 1 −0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 1 −0.01−0.02 −0.05 −0.1−0.2 −0.5 −1 −2 −5 −10 −5 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) −10 −1 Ta= −25°C 25°C 100°C TRANSITION FREQUENCY : fT (MHz) −2 1000 lC/lB=10 −5 VBE(sat) −0.5 −0.2 −0.1 −0.05 Ta=100°C 25°C −25°C VCE(sat) −0.02 −0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ Ta=25°C VCE= −5V 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/3 −2.0 −1.5 −10mA −1.0 IB=−5mA −0.5 PC=15W −10 −20 IB=0mA −30 −40 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ) VCE= −3V 500 Tc=25°C −50mA −45mA −40mA −35mA −30mA −25mA −20mA −15mA −2.5 0 0 Fig.2 Grounded emitter output characteristics ( ) 500 DC CURRENT GAIN : hFE −1 IB=0mA −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) −10mA −1.0 BASE TO EMITTER VOLTAGE : VBE (V) 200 −15mA −1.5 −0.02 −0.01 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 1000 −20mA −2.0 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −0.5 −2.5 −3.0 Tc=25°C −10 Ta=25°C −5 −2 −1 −0.5 −0.2 −0.1 IC/IB=50/1 −0.05 20/1 −0.02 10/1 −0.01 −0.01−0.02 −0.05−0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs.collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) −1 −50mA −45mA −40mA −35mA −30mA −25mA COLLECTOR CURRENT : IC (A) −3.0 VCE= −3V −5 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −10 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector base voltage 2010.02 - Rev.C 2SB1184 / 2SB1243 Data Sheet −10.0 -10.0 −2.0 −1.0 −0.5 s∗ 0m =1 Pw s∗ 0m COLLECTOR CURRENT : IC (A) Ta=25°C ∗Single nonrepetitive pulse DC DC C IC Max. (Pulse)∗ 10 COLLECTOR CURRENT : I C (A) −5.0 −0.2 −0.1 −0.05 −0.02 −50 COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.10 Safe operation area (2SB1184) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ −0.01 −0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50−100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Safe operation area (2SB1243) 3/3 2010.02 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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