ROHM 2SB1243TV2Q

Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
Dimensions (Unit : mm)
2SB1184
2SB1243
2.3 +0.2
−0.1
0.5±0.1
0.55±0.1
1.0±0.2
(1)
(2)
14.5±0.5
0.65Max.
0.9
2.3±0.2 2.3±0.2
4.4±0.2
0.9
9.5±0.5
2.5
0.65±0.1
0.75
2.5±0.2
6.8±0.2
0.5±0.1
1.5
Structure
Epitaxial planar type
PNP silicon transistor
C0.5
0.9
5.5 +0.3
−0.1
1.5±0.3
6.5±0.2
5.1 +0.2
−0.1
1.0
Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
(3)
2.54 2.54
1.05
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : ATV
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−3
A (DC)
Collector power 2SB1184
dissipation
2SB1243
PC
1
15
W
W (TC=25°C)
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
∗1
∗1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−60
−
−
V
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50μA
Collector cutoff current
ICBO
−
−
−1
μA
VCB= −40V
Emitter cutoff current
IEBO
−
−
−1
μA
VEB= −4V
VCE(sat)
−
−
−1
V
IC/IB= −2A/ −0.2A
∗
hFE
120
−
390
−
VCE= −3V, IC= −0.5A
∗
fT
−
70
−
MHz
Cob
−
50
−
pF
Parameter
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/3
Conditions
IC= −50μA
VCE= −5V, IE=0.5A, f=30MHz
VCB= −10V, IE=0A, f=1MHz
2010.02 - Rev.C
2SB1184 / 2SB1243
Data Sheet
Packaging specifications and hFE
Taping
Package
TL
TV2
2500
2500
Code
Type
hFE
2SB1184
QR
2SB1243
QR
Basic ordering unit (pieces)
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
Electrical characteristic curves
−2
Ta=100°C
25°C
-25°C
−0.2
−0.1
−0.05
−5mA
−0.5
0
0
−2
−3
1k
Ta=25°C
DC CURRENT GAIN : hFE
VCE=−5V
100
50
−3V
20
10
5
Ta=100°C
25°C
−25°C
200
100
50
20
10
5
2
2
1
−0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
1
−0.01−0.02 −0.05 −0.1−0.2 −0.5 −1 −2
−5
−10
−5 −10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current ( )
Fig.5 DC current gain vs.
collector current ( )
−10
−1
Ta= −25°C
25°C
100°C
TRANSITION FREQUENCY : fT (MHz)
−2
1000
lC/lB=10
−5
VBE(sat)
−0.5
−0.2
−0.1
−0.05
Ta=100°C
25°C
−25°C
VCE(sat)
−0.02
−0.01
−0.01 −0.02 −0.05 −0.1 −0.2
−0.5
−1 −2
−5
−10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage vs.
collector current
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c 2010 ROHM Co., Ltd. All rights reserved.
○
Ta=25°C
VCE= −5V
500
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
2/3
−2.0
−1.5
−10mA
−1.0
IB=−5mA
−0.5
PC=15W
−10
−20
IB=0mA
−30
−40
−50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( )
VCE= −3V
500
Tc=25°C
−50mA
−45mA
−40mA
−35mA
−30mA
−25mA
−20mA
−15mA
−2.5
0
0
Fig.2 Grounded emitter output
characteristics ( )
500
DC CURRENT GAIN : hFE
−1
IB=0mA
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter
propagation characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE
: VBE(sat) (V)
−10mA
−1.0
BASE TO EMITTER VOLTAGE : VBE (V)
200
−15mA
−1.5
−0.02
−0.01
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
1000
−20mA
−2.0
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−0.5
−2.5
−3.0
Tc=25°C
−10
Ta=25°C
−5
−2
−1
−0.5
−0.2
−0.1
IC/IB=50/1
−0.05
20/1
−0.02
10/1
−0.01
−0.01−0.02 −0.05−0.1 −0.2 −0.5 −1 −2
−5 −10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs.collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
−1
−50mA
−45mA
−40mA
−35mA
−30mA
−25mA
COLLECTOR CURRENT : IC (A)
−3.0
VCE= −3V
−5
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
−10
1000
Ta=25°C
f=1MHz
IE=0A
500
200
100
50
20
10
5
2
1
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance vs.
collector base voltage
2010.02 - Rev.C
2SB1184 / 2SB1243
Data Sheet
−10.0
-10.0
−2.0
−1.0
−0.5
s∗
0m
=1
Pw
s∗
0m
COLLECTOR CURRENT : IC (A)
Ta=25°C
∗Single
nonrepetitive
pulse
DC
DC
C
IC Max. (Pulse)∗
10
COLLECTOR CURRENT : I C (A)
−5.0
−0.2
−0.1
−0.05
−0.02
−50
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
Fig.10 Safe operation area
(2SB1184)
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c 2010 ROHM Co., Ltd. All rights reserved.
○
−0.01
−0.1−0.2
−0.5 −1
−2
−5 −10 −20 −50−100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Safe operation area
(2SB1243)
3/3
2010.02 - Rev.C
Notice
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R1010A