UT64BS1X433 - Aeroflex Microelectronic Solutions

Standard Products
UT64BS1X433 Matrix-A™ 64-Channel 1:4 Bus Switch
Preliminary Data Sheet
November 12, 2014
www.aeroflex.com/busswitch
FEATURES
 Interfaces to standard processor memory busses
 Single-chip interface to industry-standard asynchronous
SRAM and PROM memory devices
 Eliminates need for additional logic or FPGA
 I/O channels functional to 3.3V
 RON 5 Ohms typical
 Flat RON characteristics over channel voltage
 Propagation delay 187ps through switch
 Transmission gate technology allows for true bi-directional
operation
 Bus holders maintain output states on all 64 channels when
de-selected
 Logic power 1mW/MHz
 Independent 5-bit address decoding to select 1 of 32 devices
 Temperature range -55°C to 125°C
 Operational environment:
- Intrinsic total-dose: up to 300 krad(Si)
INTRODUCTION
The UT64BS1X433 Matrix-A™ is a 64-Channel, 1:4 Bus
Switch, that provides bus isolation for up to four banks of 64
I/O connections. By providing bus isolation, the UT64BS1X433
can significantly reduce the amount of load capacitance seen by
a host processor and memory devices. The reduction in both
load capacitance and delay time significantly increase speed and
performance compared with a discrete logic or FPGA memory
interface solution.
The UT64BS1X433 operates from a single 3.3V supply. The
bus channels can pass any voltage between VSS and VDD,
allowing the switching of signals using other standards, such as
LVCMOS 1.8V.
The UT64BS1X433 has two modes of operation. In mode 0, the
device uses five address and one chip select line to electrically
connect the input bank to one of four output banks and generate
1 of 32 chip select outputs. In mode 1, the device uses eight
address and two chip select lines to independently control two
pairs of two banks with each bank pair controlled by one of the
two chip selects. Mode 1 allows the device to interface two
different types of memory having different address bus
configurations e.g. two PROM banks and two SRAM banks.
The input and output banks connect via analog channels that
have an RON that is nominally 5 Ohms over the entire input
voltage range. The flat RON eliminates the need to add external
series resistors for source impedance termination.
- SEL Immune: <100 MeV-cm2/mg @ 125°C
 Packaging options:
- 400-pin Ceramic Land Grid, Column Grid and Ball
Grid Array packages; 1mm pitch
 Standard Microcircuit Drawing 5962-TBD
- QML Q and V (pending)
APPLICATIONS
- Microprocessor interfaces that require large amounts of
memory
- High-speed applications or systems with large bus
capacitance
- Cost-sensitive applications that require bus isolation
without an expensive FPGA
The UT64BS1X433 also provides logic to control up to eight
discrete devices per bank by providing eight individual chip
selects that are decoded using address lines ASEL[2:0] and
BSEL[2:0]. In a fully utilized configuration, the UT64BS1X433
can select up to 32 discrete devices and provide bus isolation to
each bank of eight devices. This makes the device ideally suited
for use with mutli-chip module memory devices, such as the
Aeroflex UT8R1/2/4M39 40/80/160Mbit family of SRAM
devices. Each UT64BS1X433 can interface up to four of the
Aeroflex 160Mb SRAM MCM devices with any Aeroflex
LEON processor without the need for additional logic.
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INTRODUCTION
The UT64BS1X433 64-Channel 1:4 Bus Switch is built on a 0.35μm Triple-Well CMOS process. The device incorporates control
logic that electrically connects input bank A to the output banks B0-B3, depending upon the selected channel. The control logic also
decodes the address pins to provide chip-select outputs to up to 32 discrete memory devices. To ensure that important memory control lines e.g. RD and WR are consistently driven, regardless of the switching logic, the Matrix-A provides two 2-to-4 fanout buffers. Typical applications will connect the processor or memory controller’s RD and WR output signals to XIN and YIN on the
Matrix-A, and tie the corresponding XOUTn and YOUTn to the RD and WR memory inputs on each bank.
0A
S
S
S
…
S
63A
S
S
S
S
0B0
0B1
0B2
0B3
63B0
63B1
63B2
63B3
Channel Select
MODE
RAMS
ROMS
CS3[7:0]
ASEL[2:0]
CS2[7:0]
BSEL[2:0]
CS1[7:0]
BANK[1:0]
CS0[7:0]
Decoder Logic
XIN[0]
XIN[1]
XOUT0
XOUT1
XOUT2
XOUT3
YIN[0]
YIN[1]
YOUT0
YOUT1
YOUT2
YOUT3
Figure 1. UT64BS1X433 Functional Block Diagram
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Functional Tables
Table 1. Truth Table for Digital Inputs and Channels
Inputs
Channel Outputs
MODE
ROMS
RAMS
BSEL[2:0]
BANK[1]
BANK[0]
ASEL[2:0]
[63:0]B3
[63:0]B2
[63:0]B1
[63:0]B0
X
1
1
XXXb
X
X
XXXb
Z
Z
Z
Z
0
0
1
XXXb
X
X
XXXb
Z
Z
Z
Z
Z
Z
Z
IN->OUT
MODE 0
X
0
XXXb
0
0
000b
0
X
0
XXXb
0
0
111b
Z
Z
Z
IN->OUT
0
X
0
XXXb
0
1
000b
Z
Z
IN->OUT
Z
0
X
0
XXXb
0
1
111b
Z
Z
IN->OUT
Z
0
X
0
XXXb
1
0
000b
Z
IN->OUT
Z
Z
0
X
0
XXXb
1
0
111b
Z
IN->OUT
Z
Z
0
X
0
XXXb
1
1
000b
IN->OUT
Z
Z
Z
0
X
0
XXXb
1
1
111b
IN->OUT
Z
Z
Z
…
…
…
…
0
MODE 1
0
X
000b
X
0
XXXb
Z
Z
Z
IN->OUT
1
0
X
111b
X
0
XXXb
Z
Z
Z
IN->OUT
1
0
X
000b
X
1
XXXb
Z
Z
IN->OUT
Z
1
0
X
111b
X
1
XXXb
Z
Z
IN->OUT
Z
1
1
0
XXXb
0
X
000b
Z
IN->OUT
Z
Z
1
1
0
XXXb
0
X
111b
Z
IN->OUT
Z
Z
1
1
0
XXXb
1
X
000b
IN->OUT
Z
Z
Z
1
1
0
XXXb
1
X
111b
IN->OUT
Z
Z
Z
…
…
…
…
1
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Table 2: Truth Table for Digital Inputs and Digital Outputs
Inputs
Digital Outputs
MODE
ROMS
RAMS
BSEL[2:0]
BANK[1]
BANK[0]
ASEL[2:0]
CS3[7:0]
CS2[7:0]
CS1[7:0]
CS0[7:0]
X
1
1
XXXb
X
X
XXXb
11111111b
11111111b
11111111b
11111111b
0
0
1
XXXb
X
X
XXXb
11111111b
11111111b
11111111b
11111111b
11111111b
11111111b
11111111b
11111110b
MODE 0
X
0
XXXb
0
0
000b
0
X
0
XXXb
0
0
111b
11111111b
11111111b
11111111b
01111111b
0
X
0
XXXb
0
1
000b
11111111b
11111111b
11111110b
11111111b
0
X
0
XXXb
0
1
111b
11111111b
11111111b
01111111b
11111111b
0
X
0
XXXb
1
0
000b
11111111b
11111110b
11111111b
11111111b
0
X
0
XXXb
1
0
111b
11111111b
01111111b
11111111b
11111111b
0
X
0
XXXb
1
1
000b
11111110b
11111111b
11111111b
11111111b
0
X
0
XXXb
1
1
111b
01111111b
11111111b
11111111b
11111111b
…
…
…
…
0
MODE 1
0
X
000b
X
0
XXXb
11111111b
11111111b
11111111b
11111110b
1
0
X
111b
X
0
XXXb
11111111b
11111111b
11111111b
01111111b
1
0
X
000b
X
1
XXXb
11111111b
11111111b
11111110b
11111111b
1
0
X
111b
X
1
XXXb
11111111b
11111111b
01111111b
11111111b
1
1
0
XXXb
0
X
000b
11111111b
11111110b
11111111b
11111111b
1
1
0
XXXb
0
X
111b
11111111b
01111111b
11111111b
11111111b
1
1
0
XXXb
1
X
000b
11111110b
11111111b
11111111b
11111111b
1
1
0
XXXb
1
X
111b
01111111b
11111111b
11111111b
11111111b
…
…
…
…
1
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PIN IDENTIFICATION and DESCRIPTION
Logic Pins
Pin Name
Direction
Pin
Number
MODE
I
M11
Mode select
0: Banks 0-3 are selected with BANK[1:0] and bank 0-3 chip selects are selected
with ASEL[2:0].
1: Banks 0-1 are selected with BANK[0] and bank 0-1 chip selects are selected
with BSEL[2:0]. Banks 2-3 are selected with BANK[1] and bank 2-3 chip
selects are selected with ASEL[2:0].
RAMS
I
M10
Enables banks 0-3 in mode 0 and banks 2-3 in mode 1.
ROMS
I
N10
Enables banks 0-1 in mode 1. Don’t care in mode 0.
ASEL[0]
I
P9
Bit 0 to select chip selects for banks 0-3 in mode 0 and for banks 2-3 in mode 1.
ASEL[1]
I
P10
Bit 1 to select chip selects for banks 0-3 in mode 0 and for banks 2-3 in mode 1.
ASEL[2]
I
R10
Bit 2 to select chip selects for banks 0-3 in mode 0 and for banks 2-3 in mode 1.
BSEL[0]
I
U7
Bit 0 to select chip selects for banks 0-1 in mode 1.
BSEL[1]
I
N9
Bit 1 to select chip selects for banks 0-1 in mode 1.
BSEL[2]
I
M9
Bit 2 to select chip selects for banks 0-1 in mode 1.
BANK[0]
I
U6
Bit 0 to select banks 0-3 in mode 0 and banks 0-1 in mode 1.
BANK[1]
I
U8
Bit 1 to select banks 0-3 in mode 0 and banks 2-3 in mode 1.
CS0[0]
O
W5
Bank 0 chip select 0. Asserted when xSEL[2:0] = 000b.
CS0[1]
O
Y6
Bank 0 chip select 1. Asserted when xSEL[2:0] = 001b.
CS0[2]
O
V9
Bank 0 chip select 2. Asserted when xSEL[2:0] = 010b.
CS0[3]
O
Y4
Bank 0 chip select 3. Asserted when xSEL[2:0] = 011b.
CS0[4]
O
W9
Bank 0 chip select 4. Asserted when xSEL[2:0] = 100b.
CS0[5]
O
P8
Bank 0 chip select 5. Asserted when xSEL[2:0] = 101b.
CS0[6]
O
R9
Bank 0 chip select 6. Asserted when xSEL[2:0] = 110b.
CS0[7]
O
U10
Bank 0 chip select 7. Asserted when xSEL[2:0] = 111b.
CS1[0]
O
W6
Bank 0 chip select 0. Asserted when xSEL[2:0] = 000b.
CS1[1]
O
V7
Bank 1 chip select 1. Asserted when xSEL[2:0] = 001b.
CS1[2]
O
W8
Bank 1 chip select 2. Asserted when xSEL[2:0] = 010b.
CS1[3]
O
W4
Bank 1 chip select 3. Asserted when xSEL[2:0] = 011b.
CS1[4]
O
Y10
Bank 1 chip select 4. Asserted when xSEL[2:0] = 100b.
CS1[5]
O
R7
Bank 1 chip select 5. Asserted when xSEL[2:0] = 101b.
Description
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Pin Name
Direction
Pin
Number
CS1[6]
O
T9
Bank 1 chip select 6. Asserted when xSEL[2:0] = 110b.
CS1[7]
O
V10
Bank 1 chip select 7. Asserted when xSEL[2:0] = 111b.
CS2[0]
O
Y5
Bank 2 chip select 0. Asserted when xSEL[2:0] = 000b.
CS2[1]
O
V8
Bank 2 chip select 1. Asserted when xSEL[2:0] = 001b.
CS2[2]
O
Y3
Bank 2 chip select 2. Asserted when xSEL[2:0] = 010b.
CS2[3]
O
V3
Bank 2 chip select 3. Asserted when xSEL[2:0] = 011b.
CS2[4]
O
Y9
Bank 2 chip select 4. Asserted when xSEL[2:0] = 100b.
CS2[5]
O
R8
Bank 2 chip select 5. Asserted when xSEL[2:0] = 101b.
CS2[6]
O
U9
Bank 2 chip select 6. Asserted when xSEL[2:0] = 110b.
CS2[7]
O
T6
Bank 2 chip select 7. Asserted when xSEL[2:0] = 111b.
CS3[0]
O
Y7
Bank 3 chip select 0. Asserted when xSEL[2:0] = 000b.
CS3[1]
O
W7
Bank 3 chip select 1. Asserted when xSEL[2:0] = 001b.
CS3[2]
O
W3
Bank 3 chip select 2. Asserted when xSEL[2:0] = 010b.
CS3[3]
O
W10
Bank 3 chip select 3. Asserted when xSEL[2:0] = 011b.
CS3[4]
O
Y8
Bank 3 chip select 4. Asserted when xSEL[2:0] = 100b.
CS3[5]
O
T8
Bank 3 chip select 5. Asserted when xSEL[2:0] = 101b.
CS3[6]
O
T10
Bank 3 chip select 6. Asserted when xSEL[2:0] = 110b.
CS3[7]
O
T7
Bank 3 chip select 7. Asserted when xSEL[2:0] = 111b.
XIN[0]
I
T14
Buffered input X[0]
XIN[1]
I
R6
Buffered input X[1]
YIN[0]
I
N11
Buffered input Y[0]
YIN[1]
I
V6
Buffered input Y[1]
XOUT[0]
O
U14
Bit 0 of buffered output X
XOUT[1]
O
T15
Bit 1 of buffered output X
XOUT[2]
O
P12
Bit 2 of buffered output X
XOUT[3]
O
U13
Bit 3 of buffered output X
YOUT[0]
O
N12
Bit 0 of buffered output Y
YOUT[1]
O
P11
Bit 1 of buffered output Y
YOUT[2]
O
M12
Bit 2 of buffered output Y
YOUT[3]
O
R11
Bit 3 of buffered output Y
Description
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Channel Pins
Pin Name
Pin
Number
Pin Name
Pin
Number
Pin Name
Pin
Number
Pin Name
Pin
Number
Pin Name
Pin
Number
0A
U3
0B0
R03
0B1
U4
0B2
T3
0B3
T4
1A
T1
1B0
T2
1B1
R2
1B2
P1
1B3
R1
2A
P2
2B0
P3
2B1
N3
2B2
M3
2B3
N2
3A
U1
3B0
W2
3B1
V2
3B2
U2
3B3
V1
4A
L1
4B0
L2
4B1
M2
4B2
M1
4B3
N1
5A
N6
5B0
N7
5B1
P6
5B2
N5
5B3
N8
6A
L5
6B0
M5
6B1
M4
6B2
L4
6B3
L3
7A
R4
7B0
R5
7B1
P5
7B2
N4
7B3
P4
8A
M7
8B0
M8
8B1
M6
8B2
L7
8B3
L6
9A
L9
9B0
L10
9B1
L8
9B2
K8
9B3
K9
10A
J8
10B0
K7
10B1
J7
10B2
K6
10B3
J9
11A
H4
11B0
G4
11B1
F5
11B2
F6
11B3
G5
12A
K5
12B0
K4
12B1
K3
12B2
J5
12B3
J4
13A
H6
13B0
H5
13B1
J6
13B2
H7
13B3
G6
14A
J2
14B0
J1
14B1
H1
14B2
K1
14B3
K2
15A
D2
15B0
C1
15B1
D1
15B2
C3
15B3
C2
16A
H3
16B0
J3
16B1
H2
16B2
G2
16B3
G3
17A
F1
17B0
G1
17B1
E1
17B2
E2
17B3
F2
18A
F4
18B0
E3
18B1
E4
18B2
F3
18B3
D3
19A
C4
19B0
C6
19B1
D4
19B2
C5
19B3
D5
20A
A5
20B0
B5
20B1
B6
20B2
A7
20B3
A6
21A
B7
21B0
C7
21B1
C8
21B2
C9
21B3
B8
22A
A4
22B0
B2
22B1
B3
22B2
B4
22B3
A3
23A
A10
23B0
B10
23B1
B9
23B2
A9
23B3
A8
24A
F8
24B0
G8
24B1
F7
24B2
E8
24B3
F9
25A
E10
25B0
E9
25B1
D9
25B2
D10
25B3
C10
26A
D6
26B0
E6
26B1
E7
26B2
D8
26B3
D7
27A
G9
27B0
H9
27B1
H8
27B2
G10
27B3
F10
28A
H10
28B0
J10
28B1
K11
28B2
J11
28B3
H11
29A
G11
29B0
F11
29B1
G12
29B2
H12
29B3
F12
30A
E14
30B0
D13
30B1
D14
30B2
D15
30B3
E15
31A
E11
31B0
D11
31B1
C11
31B2
E12
31B3
D12
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Pin Name
Pin
Number
Pin Name
Pin
Number
Pin Name
Pin
Number
Pin Name
Pin
Number
Pin Name
Pin
Number
32A
E13
32B0
H13
32B1
F13
32B2
G13
32B3
F14
33A
B12
33B0
A12
33B1
A13
33B2
A11
33B3
B11
34A
B17
34B0
A18
34B1
A17
34B2
B19
34B3
B18
35A
C13
35B0
C12
35B1
B13
35B2
B14
35B3
C14
36A
A14
36B0
A15
36B1
A16
36B2
B16
36B3
B15
37A
D17
37B0
C16
37B1
D16
37B2
C15
37B3
C17
38A
F17
38B0
D18
38B1
F18
38B2
E17
38B3
E18
39A
F20
39B0
F19
39B1
E19
39B2
E20
39B3
G20
40A
H18
40B0
G18
40B1
G19
40B2
H19
40B3
J18
41A
D19
41B0
C19
41B1
C18
41B2
D20
41B3
C20
42A
J19
42B0
K19
42B1
K20
42B2
H20
42B3
J20
43A
H15
43B0
G15
43B1
H14
43B2
J15
43B3
H16
44A
K16
44B0
J17
44B1
J16
44B2
K18
44B3
K17
45A
H17
45B0
G16
45B1
F15
45B2
F16
45B3
G17
46A
J13
46B0
J12
46B1
K15
46B2
J14
46B3
K14
47A
L12
47B0
K12
47B1
K13
47B2
L13
47B3
L11
48A
M14
48B0
L15
48B1
L14
48B2
M15
48B3
M13
49A
R17
49B0
P17
49B1
N17
49B2
P16
49B3
R16
50A
L16
50B0
L18
50B1
L17
50B2
M17
50B3
M16
51A
N15
51B0
N13
51B1
N16
51B2
P15
51B3
N14
52A
L20
52B0
N20
52B1
M20
52B2
M19
52B3
L19
53A
U20
53B0
V20
53B1
U19
53B2
V19
53B3
W19
54A
P19
54B0
N19
54B1
M18
54B2
N18
54B3
P18
55A
T20
55B0
R20
55B1
P20
55B2
R19
55B3
T19
56A
U18
56B0
T17
56B1
T18
56B2
U17
56B3
R18
57A
U15
57B0
V17
57B1
V15
57B2
U16
57B3
V16
58A
Y14
58B0
W15
58B1
W16
58B2
Y16
58B3
Y15
59A
V13
59B0
V14
59B1
W14
59B2
W13
59B3
V12
60A
W17
60B0
W18
60B1
V18
60B2
Y17
60B3
Y18
61A
W12
61B0
W11
61B1
Y11
61B2
Y13
61B3
Y12
62A
T13
62B0
R14
62B1
P13
62B2
R13
62B3
R12
63A
T11
63B0
U12
63B1
T12
63B2
V11
63B3
U11
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Power and Ground Pins
Pin Name
Pin Number
Description
VDD
A2, A20, B1, E5, G14, P7, T16, W20, Y1, Y19
Power Supply
VSS
A1, A19, B20, E16, G7, P14, T5, U5, W1, Y2, Y20, R15
Ground
NC
K10, V4, V5
No Connect
ABSOLUTE MAXIMUM RATINGS1
(Referenced to VSS)
SYMBOL
DESCRIPTION
VALUE
UNITS
-0.3 to 4.8
V
VDD
Supply voltage2
VIO
Input voltage any logic pin2
VSS-0.3 to VDD+0.3
V
VCH
Input voltage any bussed pin2
VSS-0.3 to VDD+0.3
V
-10 to 10
mA
5
W
150
°C
5
°C/W
-65 to 150
°C
2000
V
IIO
Maximum dc I/O current any logic pin
PD
Maximum power dissipation permitted @
TC=125C3
TJ
Junction temperature
θJC
Thermal resistance, junction to case
TSTG
Storage temperature
ESD
ESD protection (human body model) Class 2
Notes:
1. Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation should be restricted to recommended operating conditions.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability and performance.
2. All voltages are referenced to VSS
3. Power dissipation capability depends on package characteristics and use environment.
RECOMMENDED OPERATING CONDITIONS
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(Referenced to VSS)
SYMBOL
DESCRIPTION
CONDITIONS
VALUE
UNITS
VDD
Supply voltage
3.0 to 3.6
V
VIN
Input voltage any pin
0 to VDD
V
TC
Case operating temperature
-55 to 125
°C
tR
Rise time, logic inputs
Transition from VIL to VIH
5
ns
tF
Fall time, logic inputs
Transition from VIH to VIL
5
ns
-60 to 60
mA
ICH
DC Continuous channel current
OPERATIONAL ENVIRONMENT
OPERATIONAL ENVIRONMENT
PARAMETER
LIMIT
UNITS
TID
3.0E5
Rad(Si)
Single Event Latchup ImmunE (SEL)
<100
MeV-cm2/mg
POWER SUPPLY OPERATING CHARACTERISTICS (Pre and Post-Radiation)*
(VDD = 3.3V + 0.3V; VSS < VIN < VDD; -55°C < TC < +125°C); Unless otherwise noted, TC is per the temperature range ordered
SYMBOL
DESCRIPTION
CONDITIONS
MIN
MAX
UNITS
IDD
Active supply current
VDD=3.6V
The following pins are toggling once per
period at f=18.67MHz: RAMS,
ASEL[1], BSEL[1]. BANK[0] at
f=1.17MHz.
--
1.5
mA/
MHz
IDDS
Standby supply current
VDD=3.6V
ROMS=VDD, RAMS=VDD
-55°C
and
+25°C
--
20
uA
+125°C
--
250
uA
Notes:
* For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883 Method 1019,
Condition A up to the maximum TID level procured.
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DC CHARACTERISTICS FOR LOGIC SIGNALS (Pre and Post-Radiation)*
(VDD = 3.3V + 0.3V; VSS < VIN < VDD; -55°C < TC < +125°C); Unless otherwise noted, TC is per the temperature range ordered
SYMBOL
DESCRIPTION
CONDITIONS
MIN
MAX
UNITS
VIH
High-level input voltage
VDD = 3.6V
2.0
--
V
VIL
Low-level input voltage
VDD = 3.0V
--
0.8
V
IIN
Input leakage current
VIN=VDD, VDD = 3.6V
--
1
uA
VIN=VSS, VDD = 3.6V
-1
--
IOH=-100uA, VDD = 3.0V
VDD-0.2
--
IOH=-24mA, VDD = 3.0V
2.2
--
IOL=100uA, VDD = 3.0V
--
0.2
VOH1
VOL1
High-level output voltage
Low-level output voltage
IOL=24mA, VDD = 3.0V
VBBM2
CIN3
COUT3
V
V
0.6
Break before make voltage
Any two CSm[n] signals
RL=50Ω, CL=50pF
2.0
--
V
Input capacitance
VDD=0V
f=1MHz
--
TBD
pF
Output capacitance
VDD=0V
f=1MHz
--
TBD
pF
Notes:
* For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883 Method 1019,
Condition A up to the maximum TID level procured.
1. Output pins should not be shorted to VDD when driven low nor to VSS when driven high.
2. Guaranteed by design.
3. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
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DC CHARACTERISTICS FOR BUSSED SIGNALS (Pre and Post-Radiation)*
(VDD = 3.3V + 0.3V; VSS < VIN < VDD; -55°C < TC < +125°C); Unless otherwise noted, TC is per the temperature range ordered
SYMBOL
DESCRIPTION
CONDITIONS
MIN
MAX
UNITS
Switch ON capacitance
Output is open
f=1MHz, 0.1VDD<VI<0.9VDD
--
17
pF
COFF11
Switch OFF capacitance at
input mA
Output is open
f=1MHz
--
11
pF
COFF21
Switch OFF capacitance at
output mBn
Input is open
f=1MHz
--
5
pF
Switch ON resistance
VO=VSS, VDD, and VDD/2
IIN=40mA
--
11
Ω
Switch ON resistance flatness
VO=VSS, VDD, and VDD/2
IIN=-40mA
--
5
Ω
Switch OFF leakage current
VI=VSS and VO=VDD, or
VI=VDD and VO=VSS
-2
2
uA
IBHHL3
Bus holder switch current
high to low
Output is off
-500
-150
uA
IBHLH3
Bus holder switch current
low to high
Output is off
150
500
uA
CON1
RON2
RON(flat)2
IOFF
Notes:
* For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883 Method 1019,
Condition A up to the maximum TID level procured.
1. Guaranteed by design.
2. Guaranteed by device characterization.
3. Guaranteed by functional test only.
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AC CHARACTERISTICS (Pre and Post-Radiation)*
(VDD = 3.3V + 0.3V; VSS < VIN < VDD; -55°C < TC < +125°C); Unless otherwise noted, TC is per the temperature range ordered
SYMBOL
DESCRIPTION
tP,BUS1
Bussed signals propagation
delay
tON1
CONDITIONS
MIN
MAX
UNITS
From any mA input to any mBn output
--
187
ps
Bussed signals ON time
From BANK to any mBn output; ROMS
and RAMS static
RL=50Ω, CL=50pF
1.7
6.2
ns
tOFF1
Bussed signals OFF time
From BANK to any mBn output; ROMS
and RAMS static
RL=50Ω, CL=50pF
1.7
5.7
ns
tON2
Bussed signals ON time
From ROMS or RAMS to any mBn output; BANK static
RL=50Ω, CL=50pF
1.7
6.2
ns
tOFF2
Bussed signals OFF time
From ROMS or RAMS to any mBn output; BANK static
RL=50Ω, CL=50pF
1.7
5.7
ns
tPLH1
Logic output low-to-high
delay
From ASEL, BSEL, or BANK to any
CS; ROMS and RAMS static
RL=50Ω, CL=50pF
2.0
7.5
ns
tPHL1
Logic output high-to-low
delay
From ASEL, BSEL, or BANK to any
CS; ROMS and RAMS static
RL=50Ω, CL=50pF
2.0
7.5
ns
tPLH2
Logic output low-to-high
delay
From ROMS or RAMS to any CS;
ASEL, BSEL, and BANK static
RL=50Ω, CL=50pF
2.0
7.5
ns
tPHL2
Logic output high-to-low
delay
From ROMS or RAMS to any CS;
ASEL, BSEL, and BANK static
RL=50Ω, CL=50pF
2.0
7.5
ns
tPLH3
Buffered output low-tohigh delay
From XIN to any XOUT or YIN to any
YOUT
RL=50Ω, CL=50pF
1.0
4.0
ns
tPHL3
Buffered output high-tolow delay
From XIN to any XOUT or YIN to any
YOUT
RL=50Ω, CL=50pF
1.0
4.0
ns
Notes:
* For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883 Method 1019,
Condition A up to the maximum TID level procured.
1. Not tested. The propagation delay through the channel is based upon the RC time constant of the maximum channel resistance and switch ON capacitance; 11Ω
and 17pF.
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PARAMETER MEASUREMENT INFORMATION
VDD
INPUT
VDD
VDD/2
0V
100Ω
VOH
From Out-
OUTPUT
50pF
VDD/2
VOL
100Ω
Figure 5. Logic and Buffered Output Delay
Figure 2. Load Circuit
VDD
INPUT
VDD/2
0V
VDD/2 + 0.3
3VDD/4
VDD/2
VDD/2
VDD/2 - 0.3
OUTPUT
VDD/4
Notes:
1. The bus input is driven to VDD or VSS through a
Figure 3. Bussed Signals Turn-on Time
VDD
INPUT
VDD/2
0V
3VDD/4
3VDD/4 - 0.3
VDD/2
OUTPUT
VDD/4 + 0.3
VDD/2
VDD/4
Notes:
1. The bus input is driven to VDD or VSS through a
Figure 4. Bussed Signals Turn-off Time
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PACKAGING
Figure 6. 400-pin Ceramic Land Grid Array Package (Case Outline Z)
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Figure 7. 400-pin Ceramic Column Grid Array Package (Case Outline S)
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Figure 8. 400-pin Ceramic Ball Grid Array Package (Case Outline C)
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ORDERING INFORMATION
UT64BS1X433 Matrix-A
UT ********* -
*
*
*
Lead Finish:
(A) = Hot Solder Dipped
(C) = Gold
Screening Level: (NOTE 1 & 2)
(P) = Prototype flow (Temperature Range: 25oC only)
(E) = HiRel flow (Temperature Range: -55oC to +125oC)
Case Outline:
(Z) = 400-Ceramic Land Grid Array
(S) = 400-Ceramic Column Grid Array
(C) = 400-Ceramic Ball Grid Array
Device Type:
(64BS1X433) = Matrix-A 64-Channel 1:4 Bus Switch
Notes:
1. Prototype Flow per Aeroflex Manufacturing Flows Document. Devices are tested at 25oC only. Radiation is neither tested nor guaranteed.
2. HiRel Flow per Aeroflex Manufacturing Flows Document. Radiation is neither tested nor guaranteed.
Package Option
Associated Lead Finish
(Z) 400-CLGA
(C) Gold
(S) 400-CCGA
(A) Hot Solder Dipped
(C) 400-CBGA
(A) Hot Solder Dipped
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UT64BS1X433 Matrix-A: SMD
5962
-
XXXXX
**
*
*
*
Lead Finish: (NOTE 1)
(C) = Gold
Case Outline: (NOTE 2)
(X) = 400-Ceramic Land Grid Array Package
Screening Level:
(Q) = QML Class Q
(V) = QML Class V
Device Type:
(01) = UT64BS1X433 (Temperature range: -55oC to +125oC)
Drawing Number:
TBD
Total Dose:
(R) = 1E5 rad(Si)
(F) = 3E5 rad(Si)
Federal Stock Class Number: No Options
Notes:
1. Lead finish is “C” (gold) only.
2. Aeroflex offers Column Attachment as an additional service for the Ceramic Column Grid Array (Case outline "S"). If needed, please ask for
COLUMN ATTACHMENT when submitting your request for quotation.
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Aeroflex Colorado Springs - Datasheet Definition
Advanced Datasheet - Product In Development
Preliminary Datasheet - Shipping Prototype
Datasheet - Shipping QML & Reduced Hi-Rel
This product is controlled for export under the International Traffic in Arms Regulations (ITAR). A license from the U.S.
Government is required prior to the export of this product from the United States.
www.aeroflex.com
[email protected]
Aeroflex Colorado Springs, Inc., reserves the right to
make changes to any products and services described
herein at any time without notice. Consult Aeroflex or an
authorized sales representative to verify that the
information in this data sheet is current before using this
product. Aeroflex does not assume any responsibility or
liability arising out of the application or use of any product
or service described herein, except as expressly agreed to
in writing by Aeroflex; nor does the purchase, lease, or
use of a product or service from Aeroflex convey a license
under any patent rights, copyrights, trademark rights, or
any other of the intellectual rights of Aeroflex or of third
parties.
Our passion for performance is defined by three
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused
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