NE5520279A

SILICON POWER MOS FET
NE5520279A
UE
D
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0
dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.
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FEATURES
• High output power
: Pout = 32.0 dBm TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)
• High power added efficiency : add = 45% TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)
• High linear gain
: GL = 10 dB TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 5 dBm)
• Surface mount package
: 5.7  5.7  1.1 mm MAX.
• Single supply
: VDS = 2.8 to 6.0 V
APPLICATION
• Digital cellular phones
: 3.2 V DCS1800 Handsets
ORDERING INFORMATION
Part Number
NE5520279A-T1
Package
Marking
79A
A2
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
SC
• Qty 1 kpcs/reel
NE5520279A-T1A
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
DI
Part number for sample order: NE5520279A-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10123EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
The mark  shows major revised points.
NE5520279A
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15.0
V
Gate to Source Voltage
VGS
5.0
V
Drain Current
ID
0.6
A
Drain Current (Pulse Test)
Note
1.2
A
ID
Ptot
12.5
W
Channel Temperature
Tch
125
C
Storage Temperature
Tstg
55 to +125
Note Duty Cycle 50%, Ton  1 s
RECOMMENDED OPERATING CONDITIONS
Symbol
Test Conditions
C
MIN.
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Parameter
UE
Total Power Dissipation
D
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
2.8
3.0
6.0
V
Gate to Source Voltage
VGS
0
2.0
3.0
V
Drain Current
Input Power
ID
Duty Cycle 50%, T on  1 s

800
1 000
mA
Pin
f = 1.8 GHz, VDS = 3.2 V
24
25
30
dBm
MIN.
TYP.
MAX.
Unit
ELECTRICAL CHARACTERISTICS
(T A = +25C, unless otherwise specified, using NEC standard test fixture)
Parameter
Symbol
Test Conditions
Gate to Source Leak Current
IGSS
VGS = 5.0 V


100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS = 6.0 V


100
nA
Gate Threshold Voltage
Vth
VDS = 3.5 V, ID = 1 mA
1.0
1.4
1.9
V
Thermal Resistance
Rth
Channel to Case


8
C/W
Gm
VDS = 3.2 V, ID = 700 mA

1.3

S
IDSS = 10  A
15
18

V
30.5
32.0

dBm
Pin = 25 dBm,

800

mA
IDset = 700 mA (RF OFF), Note1
40
45

%

10

dB
SC
Transconductance
Drain to Source Breakdown Voltage
BVDSS
Output Power
Pout
Drain Current
ID
Power Added Efficiency
add
GL
DI
Linear Gain
Note2
f = 1.8 GHz, VDS = 3.2 V,
Notes 1. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2. Pin = 5 dBm
2
Data Sheet PU10123EJ03V0DS
NE5520279A
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TYPICAL CHARACTERISTICS (T A = +25C)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10123EJ03V0DS
3
NE5520279A
LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz)
Zin ()
1.8
1.77 j6.71
ZOL ()
Note
1.25 j5.73
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f (GHz)
D
S-PARAMETERS
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Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
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Data Sheet PU10123EJ03V0DS
NE5520279A
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UE
D
EVALUATION BOARD FOR 1.8 GHz
Symbol
C1, C3
4.7 pF
C2
2.4 pF
C4
2.2 pF
C5
0.8 pF
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Value
C6
10 pF
C7
1 000 pF
C8
0.22  F
C9
3.3  F - 16V
R1
1 000 
L1
22 nH
Circuit Board
t = 0.4 mm,  r = 4.5
Data Sheet PU10123EJ03V0DS
Comment
R4775
5
NE5520279A
PACKAGE DIMENSIONS
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D
79A (UNIT: mm)
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SC
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
6
Data Sheet PU10123EJ03V0DS
NE5520279A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
VPS
: 260C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220C or higher
: 60 seconds or less
Preheating time at 120 to 180C
: 12030 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215C or below
Time at temperature of 200C or higher
: 25 to 40 seconds
Maximum number of reflow processes
: 3 times
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260C or below
WS260
: 10 seconds or less
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Partial Heating
VP215
: 30 to 60 seconds
Maximum chlorine content of rosin flux (% mass)
Time at peak temperature
IR260
D
Peak temperature (package surface temperature)
Preheating time at 120 to 150C
Wave Soldering
Condition Symbol
UE
Infrared Reflow
Soldering Conditions
Preheating temperature (package surface temperature)
: 120C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350-P3
DI
SC
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10123EJ03V0DS
7