UPD5702TU

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
µPD5702TU
ED
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
DESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS
L2MM (Lead Less Mini Mold) plastic package.
FEATURES
IN
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and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin
: Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
• Output Power
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage
: VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.
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APPLICATIONS
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)
ORDERING INFORMATION (Pb-Free)
Part Number
µPD5702TU-E2-A
Package
8-pin Lead-Less Minimold
Marking
5702
Supplying Form
• 8 mm wide embossed taping
• Pin 5, 6, 7, 8 indicates pull-out direction of tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
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Part number for sample order: µPD5702TU-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10455EJ01V0DS (1st edition)
Date Published November 2003 CP(K)
© NEC Compound Semiconductor Devices 2003
µPD5702TU
PIN CONNECTION AND INTERNAL BLOCK DIAGRAM
(Top View)
Pout2
1
Pout2
2
GND
Pin1
Q2
Pin2
7
Pin2
3
6
GND
4
5
Pout1
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IN
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Q1
ED
8
2
Preliminary Data Sheet PU10455EJ01V0DS
µPD5702TU
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Ratings
Unit
VDS
TA = +25°C
8.0
V
Gate to Source Voltage
VGS
TA = +25°C
8.0
V
Drain Current of Q1
Ids1
TA = +25°C
45
mA
Drain Current of Q2
Ids2
TA = +25°C
259
mA
Total Power Dissipation
PD
TA = +85°C
4.33
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Maximum Input Power to Q1
Pin1
TA = +25°C
6
dBm
Maximum Input Power to Q2
Pin2
TA = +25°C
16
dBm
MIN.
TYP.
MAX.
Unit
TA = +25°C
2.7
3.0
3.5
V
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RECOMMENDED OPERATING RANGE
Parameter
0
2.0
2.5
V
Drain to Source Voltage
Symbol
Note
IN
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Note Mounted on 33 × 21 mm epoxy glass PWB
ED
Drain to Source Voltage
Test Conditions
VDS
Gate to Source Voltage
VGS
TA = +25°C
Maximum Input Power to Q1
Pin1
VDS = 3V, TA = +25°C
2.0
5.0
dBm
Maximum Input Power to Q2
Pin2
VDS = 3V, TA = +25°C
11.0
15.0
dBm
ELECTRICAL CHARACTERISTICS
(f = 1.9 GHz, VDS = 3.0 V, TA = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter
Gate to Source Voltage
Test Conditions
MIN.
TYP.
MAX.
Unit
1.0
1.9
2.5
V
−
28.0
−
%
−
155
230
mA
−
10
−
dB
−
8
−
dB
21.0
−
−
dBm
26.0
−
−
dB
Pin = −20 dBm
−
26.5
−
dB
Padj1
Pin = −5 dBm, ∆600 kHz
−
−60.0
−55.0
dBc
Padj2
Pin = −5 dBm, ∆900 kHz
−
−70.0
−60
dBc
OBW
Pin = −5 dBm
−
250
−
kHz
Pin = −5 dBm
VGS
Pout = +21.0 dBm
PAE
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Power Added Efficiency
Symbol
Drain Current
Note
IDS
Input Return Loss
IRL
Output Return Loss
ORL
Output Power
Pout
Power Gain
GP
Linear Gain
GL
Adjacent Channel Power Leakage
Pin = −20 dBm
Pin = −5 dBm
1
Adjacent Channel Power Leakage
2
Occupied Band Width
Note IDS is total Drain currents of Q1 and Q2 part.
Preliminary Data Sheet PU10455EJ01V0DS
3
µPD5702TU
ELECTRICAL CHARACTERISTICS
(f = 2.4 GHz, TA = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
−
1.9
−
V
Gate to Source Voltage
Power Added Efficiency
VGS
Pin = +2 dBm
Pout = +22.0 dBm
PAE
−
28.0
−
%
−
180
−
mA
−
10
−
dB
−
10
−
dB
22.0
−
−
dBm
20.0
−
−
dB
Pin = +2 dBm
−
1.9
−
V
Pout = +21.0 dBm
−
27.5
−
%
−
150
−
mA
−
10
−
dB
−
10
−
dB
21.0
−
−
dBm
19.0
−
−
dB
MIN.
TYP.
MAX.
Unit
−
4.35
−
Ω
IDS = 1.4 µA
10.0
−
−
V
IGS = 1.4 µA
4.0
−
−
V
Note
IDS
Input Return Loss
IRL
Output Return Loss
ORL
Output Power
Pout
Power Gain
GP
Pin = −20 dBm
Pin = +2 dBm
IN
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Drain Current
VDS = 3.0 V
Gate to Source Voltage
Power Added Efficiency
VGS
PAE
Note
IDS
Drain Current
IRL
Output Return Loss
ORL
Output Power
Pout
Power Gain
Pin = −20 dBm
Pin = +2 dBm
O
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Input Return Loss
ED
VDS = 3.3 V
GP
Note IDS is total Drain currents of Q1 and Q2 part.
DC CHARACTERISTICS (TA = +25°C)
Parameter
Q1
On-state Resistance1
Drain to Source Breakdown
Test Conditions
Ron1
VDS = 0.1 V, VGS = 6 V
BVDSS1
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Voltage1
Symbol
Gate to Source Breakdown
BVGSS1
Voltage1
Gate Threshold Voltage1
Vth1
VDS = 3.5 V, IDS = 1.4 mA
1.15
1.40
1.65
V
Transconductance1
gm1
VDS = 3.5 V, IDS = 25 mA
50
70
−
mS
Ron2
VDS = 0.1 V, VGS = 6 V
−
1.02
−
Ω
Q2
On-state Resistance2
Drain to Source Breakdown
BVDSS2
IDS = 8.0 µA
10.0
−
−
V
BVGSS2
IGS = 8.0 µA
4.0
−
−
V
Voltage2
Gate to Source Breakdown
Voltage2
Gate Threshold Voltage2
Vth2
VDS = 3.5 V, IDS = 8.0 mA
1.15
1.40
1.65
V
Transconductance2
gm2
VDS = 3.5 V, IDS = 150 mA
290
370
−
mS
4
Preliminary Data Sheet PU10455EJ01V0DS
µPD5702TU
TYPICAL CHARACTERISTICS (Preliminary)
(f = 1.9 GHz, VDS = 3 V, VGS = 2 V, TA = +25°C, unless otherwise specified)
30
25
25
20
15
10
5
10
5
–10
–5
0
5
10
–5
–15
–10
–5
0
5
10
Input Power Pin (dBm)
Padj vs. INPUT POWER
DRAIN CURRENT vs. INPUT POWER
0
250
–20
Drain Current
–30
IDS (mA)
Padj1 (+600 kHz)
Padj1 (–600 kHz)
Padj2 (+900 kHz)
Padj2 (–900 kHz)
–10
–40
–50
–60
–70
–10
200
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Padj (dBc)
15
0
Input Power Pin (dBm)
–80
–15
20
IN
U
–5
–15
ED
30
0
–5
0
5
10
150
100
50
0
–15
Input Power Pin (dBm)
–10
–5
0
5
10
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
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Adjacent Channel Power Leakage
POWER GAIN vs. INPUT POWER
35
Power Gain GP (dB)
Output Power Pout (dBm)
OUTPUT POWER vs. INPUT POWER
35
Preliminary Data Sheet PU10455EJ01V0DS
5
µPD5702TU
ADJACENT CHANNEL POWER
(f = 1.9 GHz, VDS = 3 V, Pin = −5 dBm, TA = +25°C, unless otherwise specified)
10 dB/
MKR –71.17 dB
600 kHz
ED
ATTEN 20 dB
RL 5.0 dBm
Center 1.900 GHz
RBW 1.0 kHz
VBW 3.0 kHz
Span 2.000 MHz
SWP 10.0 s
IN
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Remark The graphs indicate nominal characteristics.
6
Preliminary Data Sheet PU10455EJ01V0DS
µPD5702TU
TYPICAL CHARACTERISTICS (Preliminary)
(f = 2.4 GHz, VDS = 3 V, VGS = 2 V, TA = +25°C, unless otherwise specified)
30
25
25
20
15
10
5
15
10
5
–10
–5
0
5
10
Input Power Pin (dBm)
DRAIN CURRENT vs. INPUT POWER
50
0
–15
–10
–10
–5
0
5
10
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200
100
–5
–15
Input Power Pin (dBm)
250
150
IN
U
0
–5
–15
IDS (mA)
20
ED
30
0
Drain Current
POWER GAIN vs. INPUT POWER
35
Power Gain GP (dB)
Output Power Pout (dBm)
OUTPUT POWER vs. INPUT POWER
35
–5
0
5
10
Input Power Pin (dBm)
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Remark The graphs indicate nominal characteristics.
Preliminary Data Sheet PU10455EJ01V0DS
7
µPD5702TU
PACKAGE DIMENSIONS
8-PIN LEAD-LESS MINIMOLD (UNIT: mm)
(Top View)
7
6
5
5
2
3
0.25 0.25
0.75
0.5
4
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8
8
0.16
4
2.0
7
IN
U
1
6
ED
1.4
0.4
0.1
2.0
5702
2.2
0.4
8
(Bottom View)
Preliminary Data Sheet PU10455EJ01V0DS
3
0.75
2
1
µPD5702TU
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Wave Soldering
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
ED
VPS
Condition Symbol
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215°C or below
Time at temperature of 200°C or higher
: 25 to 40 seconds
Preheating time at 120 to 150°C
: 30 to 60 seconds
IN
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Infrared Reflow
Soldering Conditions
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
VP215
WS260
Preheating temperature (package surface temperature) : 120°C or below
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
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Partial Heating
Maximum number of flow processes
HS350
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Caution Do not use different soldering methods together (except for partial heating).
Preliminary Data Sheet PU10455EJ01V0DS
9
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4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
UE
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
IN
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Lead (Pb)
Mercury
< 1000 PPM
Concentration contained
in CEL devices
-A
Not Detected
< 1000 PPM
Not Detected
< 100 PPM
Not Detected
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Cadmium
Concentration Limit per RoHS
(values are not yet fixed)
NT
Restricted Substance
per RoHS
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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