Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU ED 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS L2MM (Lead Less Mini Mold) plastic package. FEATURES IN U and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V • Output Power : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V • Single Supply voltage : VDS = 3.0 V TYP. • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting. O NT APPLICATIONS • 1.9 GHz applications (Example : PHS etc.) • 2.4 GHz applications (Example : Wireless LAN etc.) ORDERING INFORMATION (Pb-Free) Part Number µPD5702TU-E2-A Package 8-pin Lead-Less Minimold Marking 5702 Supplying Form • 8 mm wide embossed taping • Pin 5, 6, 7, 8 indicates pull-out direction of tape • Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. DI SC Part number for sample order: µPD5702TU-A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10455EJ01V0DS (1st edition) Date Published November 2003 CP(K) © NEC Compound Semiconductor Devices 2003 µPD5702TU PIN CONNECTION AND INTERNAL BLOCK DIAGRAM (Top View) Pout2 1 Pout2 2 GND Pin1 Q2 Pin2 7 Pin2 3 6 GND 4 5 Pout1 DI SC O NT IN U Q1 ED 8 2 Preliminary Data Sheet PU10455EJ01V0DS µPD5702TU ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit VDS TA = +25°C 8.0 V Gate to Source Voltage VGS TA = +25°C 8.0 V Drain Current of Q1 Ids1 TA = +25°C 45 mA Drain Current of Q2 Ids2 TA = +25°C 259 mA Total Power Dissipation PD TA = +85°C 4.33 W Channel Temperature Tch 150 °C Storage Temperature Tstg −65 to +150 °C Operating Ambient Temperature TA −40 to +85 °C Maximum Input Power to Q1 Pin1 TA = +25°C 6 dBm Maximum Input Power to Q2 Pin2 TA = +25°C 16 dBm MIN. TYP. MAX. Unit TA = +25°C 2.7 3.0 3.5 V O NT RECOMMENDED OPERATING RANGE Parameter 0 2.0 2.5 V Drain to Source Voltage Symbol Note IN U Note Mounted on 33 × 21 mm epoxy glass PWB ED Drain to Source Voltage Test Conditions VDS Gate to Source Voltage VGS TA = +25°C Maximum Input Power to Q1 Pin1 VDS = 3V, TA = +25°C 2.0 5.0 dBm Maximum Input Power to Q2 Pin2 VDS = 3V, TA = +25°C 11.0 15.0 dBm ELECTRICAL CHARACTERISTICS (f = 1.9 GHz, VDS = 3.0 V, TA = +25°C, unless otherwise specified, using our standard test fixture.) Parameter Gate to Source Voltage Test Conditions MIN. TYP. MAX. Unit 1.0 1.9 2.5 V − 28.0 − % − 155 230 mA − 10 − dB − 8 − dB 21.0 − − dBm 26.0 − − dB Pin = −20 dBm − 26.5 − dB Padj1 Pin = −5 dBm, ∆600 kHz − −60.0 −55.0 dBc Padj2 Pin = −5 dBm, ∆900 kHz − −70.0 −60 dBc OBW Pin = −5 dBm − 250 − kHz Pin = −5 dBm VGS Pout = +21.0 dBm PAE DI SC Power Added Efficiency Symbol Drain Current Note IDS Input Return Loss IRL Output Return Loss ORL Output Power Pout Power Gain GP Linear Gain GL Adjacent Channel Power Leakage Pin = −20 dBm Pin = −5 dBm 1 Adjacent Channel Power Leakage 2 Occupied Band Width Note IDS is total Drain currents of Q1 and Q2 part. Preliminary Data Sheet PU10455EJ01V0DS 3 µPD5702TU ELECTRICAL CHARACTERISTICS (f = 2.4 GHz, TA = +25°C, unless otherwise specified, using our standard test fixture.) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit − 1.9 − V Gate to Source Voltage Power Added Efficiency VGS Pin = +2 dBm Pout = +22.0 dBm PAE − 28.0 − % − 180 − mA − 10 − dB − 10 − dB 22.0 − − dBm 20.0 − − dB Pin = +2 dBm − 1.9 − V Pout = +21.0 dBm − 27.5 − % − 150 − mA − 10 − dB − 10 − dB 21.0 − − dBm 19.0 − − dB MIN. TYP. MAX. Unit − 4.35 − Ω IDS = 1.4 µA 10.0 − − V IGS = 1.4 µA 4.0 − − V Note IDS Input Return Loss IRL Output Return Loss ORL Output Power Pout Power Gain GP Pin = −20 dBm Pin = +2 dBm IN U Drain Current VDS = 3.0 V Gate to Source Voltage Power Added Efficiency VGS PAE Note IDS Drain Current IRL Output Return Loss ORL Output Power Pout Power Gain Pin = −20 dBm Pin = +2 dBm O NT Input Return Loss ED VDS = 3.3 V GP Note IDS is total Drain currents of Q1 and Q2 part. DC CHARACTERISTICS (TA = +25°C) Parameter Q1 On-state Resistance1 Drain to Source Breakdown Test Conditions Ron1 VDS = 0.1 V, VGS = 6 V BVDSS1 DI SC Voltage1 Symbol Gate to Source Breakdown BVGSS1 Voltage1 Gate Threshold Voltage1 Vth1 VDS = 3.5 V, IDS = 1.4 mA 1.15 1.40 1.65 V Transconductance1 gm1 VDS = 3.5 V, IDS = 25 mA 50 70 − mS Ron2 VDS = 0.1 V, VGS = 6 V − 1.02 − Ω Q2 On-state Resistance2 Drain to Source Breakdown BVDSS2 IDS = 8.0 µA 10.0 − − V BVGSS2 IGS = 8.0 µA 4.0 − − V Voltage2 Gate to Source Breakdown Voltage2 Gate Threshold Voltage2 Vth2 VDS = 3.5 V, IDS = 8.0 mA 1.15 1.40 1.65 V Transconductance2 gm2 VDS = 3.5 V, IDS = 150 mA 290 370 − mS 4 Preliminary Data Sheet PU10455EJ01V0DS µPD5702TU TYPICAL CHARACTERISTICS (Preliminary) (f = 1.9 GHz, VDS = 3 V, VGS = 2 V, TA = +25°C, unless otherwise specified) 30 25 25 20 15 10 5 10 5 –10 –5 0 5 10 –5 –15 –10 –5 0 5 10 Input Power Pin (dBm) Padj vs. INPUT POWER DRAIN CURRENT vs. INPUT POWER 0 250 –20 Drain Current –30 IDS (mA) Padj1 (+600 kHz) Padj1 (–600 kHz) Padj2 (+900 kHz) Padj2 (–900 kHz) –10 –40 –50 –60 –70 –10 200 O NT Padj (dBc) 15 0 Input Power Pin (dBm) –80 –15 20 IN U –5 –15 ED 30 0 –5 0 5 10 150 100 50 0 –15 Input Power Pin (dBm) –10 –5 0 5 10 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. DI SC Adjacent Channel Power Leakage POWER GAIN vs. INPUT POWER 35 Power Gain GP (dB) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 35 Preliminary Data Sheet PU10455EJ01V0DS 5 µPD5702TU ADJACENT CHANNEL POWER (f = 1.9 GHz, VDS = 3 V, Pin = −5 dBm, TA = +25°C, unless otherwise specified) 10 dB/ MKR –71.17 dB 600 kHz ED ATTEN 20 dB RL 5.0 dBm Center 1.900 GHz RBW 1.0 kHz VBW 3.0 kHz Span 2.000 MHz SWP 10.0 s IN U D DI SC O NT Remark The graphs indicate nominal characteristics. 6 Preliminary Data Sheet PU10455EJ01V0DS µPD5702TU TYPICAL CHARACTERISTICS (Preliminary) (f = 2.4 GHz, VDS = 3 V, VGS = 2 V, TA = +25°C, unless otherwise specified) 30 25 25 20 15 10 5 15 10 5 –10 –5 0 5 10 Input Power Pin (dBm) DRAIN CURRENT vs. INPUT POWER 50 0 –15 –10 –10 –5 0 5 10 O NT 200 100 –5 –15 Input Power Pin (dBm) 250 150 IN U 0 –5 –15 IDS (mA) 20 ED 30 0 Drain Current POWER GAIN vs. INPUT POWER 35 Power Gain GP (dB) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 35 –5 0 5 10 Input Power Pin (dBm) DI SC Remark The graphs indicate nominal characteristics. Preliminary Data Sheet PU10455EJ01V0DS 7 µPD5702TU PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) (Top View) 7 6 5 5 2 3 0.25 0.25 0.75 0.5 4 O NT DI SC 8 8 0.16 4 2.0 7 IN U 1 6 ED 1.4 0.4 0.1 2.0 5702 2.2 0.4 8 (Bottom View) Preliminary Data Sheet PU10455EJ01V0DS 3 0.75 2 1 µPD5702TU RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Wave Soldering Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 ED VPS Condition Symbol Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (package surface temperature) : 215°C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds IN U Infrared Reflow Soldering Conditions Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less VP215 WS260 Preheating temperature (package surface temperature) : 120°C or below : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below O NT Partial Heating Maximum number of flow processes HS350 DI SC Caution Do not use different soldering methods together (except for partial heating). Preliminary Data Sheet PU10455EJ01V0DS 9 D 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 UE Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. IN CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Lead (Pb) Mercury < 1000 PPM Concentration contained in CEL devices -A Not Detected < 1000 PPM Not Detected < 100 PPM Not Detected SC O Cadmium Concentration Limit per RoHS (values are not yet fixed) NT Restricted Substance per RoHS Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. DI Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. 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