A Business Partner of Renesas Electronics Corporation. NESG2021M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) • • • ORDERING INFORMATION Part Number Order Number NESG2021M05 NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A Quantity Supplying Form Flat-lead 4-pin thintype supper minimold (M05, 2012 PKG) (Pb-Free) 50 pcs (Non reel) 3 kpcs/reel • 8 mm wide embossed taping • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. NT Remark Package ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg SC O Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note: Ratings 13.0 5.0 1.5 35 175 150 −65 to +150 Unit V V V mA mW °C °C Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB DI <R> This device is an ideal choice for low noise, high-gain at low current amplifications. NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V Flat-lead 4-pin thin-type super minimold (M05) package IN U • ED FEATURES R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 1 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Symbol ICBO IEBO hFE Note 1 fT S21e NF Noise Figure (2) NF Associated Gain (1) Ga Associated Gain (2) Ga Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point 2 Cre Note 2 MSG Note 3 PO (1 dB) OIP3 Test Conditions MIN. TYP. MAX. Unit VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 5 mA − − 130 − − 190 100 100 260 nA nA − VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 12 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 3 V, IC = 12 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt 20 17.0 − 25 19.0 0.9 − − 1.2 GHz dB dB − 1.3 − dB 15.0 18.0 − dB − 10.0 − dB − 20.0 − 0.1 22.5 9.0 0.2 − − pF dB dBm − 17.0 − dBm ED Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) IN U <R> 3. MSG = hFE CLASSIFICATION FB/YFB T1G 130 to 260 SC O Rank Marking hFE Value DI <R> S21 S12 NT Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) 100 25 50 75 100 125 Ambient Temperature TA (˚C) 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 1 V 0.1 0.01 0.001 0.6 0.7 0.8 0.9 100 1.0 4 6 8 10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 35 VCE = 3 V 10 1 0.1 0.01 0.001 0.0001 0.4 2 Base to Emitter Voltage VBE (V) DI Collector Current IC (mA) 100 0 Collector to Base Voltage VCB (V) SC O 0.5 0.1 NT 1 0.0001 0.4 150 Collector Current IC (mA) 10 0.2 f = 1 MHz IN U 50 0.3 ED 175 150 Reverse Transfer Capacitance Cre (pF) Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 0 Collector Current IC (mA) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Total Power Dissipation Ptot (mW) 250 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 μ A 180 μ A 160 μ A 140 μ A 120 μ A 30 25 20 100 μ A 15 80 μ A 60 μ A 10 40 μ A 5 0 IB = 20 μ A 1 2 3 4 5 6 Collector to Emitter Voltage VCE (V) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 3 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 1 000 100 10 0.1 1 10 100 10 0.1 100 IN U VCE = 3 V 1 10 NT DC Current Gain hFE 10 0.1 1 Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 100 VCE = 2 V 100 Collector Current IC (mA) 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT ED VCE = 1 V DC Current Gain hFE DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 10 100 Collector Current IC (mA) DI SC O Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 4 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 20 15 10 5 0 1 10 25 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 2 V f = 2 GHz 20 15 10 5 0 1 100 VCE = 3 V f = 2 GHz 20 15 10 5 0 1 10 100 VCE = 2 V IC = 10 mA MSG MAG |S21e|2 10 5 0 0.1 30 MSG 25 20 15 MAG |S21e|2 10 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY SC O 15 VCE = 1 V IC = 10 mA 35 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 25 20 40 Frequency f (GHz) 35 30 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Collector Current IC (mA) DI Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1 10 100 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 100 Collector Current IC (mA) NT Gain Bandwidth Product fT (GHz) 30 10 IN U Collector Current IC (mA) ED 25 30 VCE = 1 V f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 30 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 VCE = 3 V IC = 10 mA 35 30 MSG 25 20 15 MAG |S21e|2 10 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 5 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 25 VCE = 1 V f = 1 GHz MSG MAG 20 |S21e|2 15 10 5 0 1 10 100 30 VCE = 1 V f = 2 GHz 25 MSG 20 15 |S21e|2 10 5 0 1 Collector Current IC (mA) MAG 15 |S21e| 5 0 1 2 10 25 VCE = 1 V f = 5 GHz 20 15 MAG 10 5 100 |S21e|2 0 –5 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 1 GHz MSG 20 MAG |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) DI Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT NT 10 100 IN U MSG 20 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) VCE = 1 V f = 3 GHz SC O Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 10 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 MAG ED 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 2 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 6 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 25 VCE = 2 V f = 3 GHz MSG 20 MAG 15 10 |S21e|2 5 0 1 10 100 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 30 VCE = 2 V f = 5 GHz 25 20 MAG 15 10 |S21e|2 5 0 1 |S21e|2 15 5 0 1 10 VCE = 3 V f = 2 GHz 25 100 MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 3 GHz MSG MAG 20 15 |S21e| 10 2 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Collector Current IC (mA) DI Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 NT 10 IN U 20 MAG 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 MSG SC O Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 3 V f = 1 GHz 10 Collector Current IC (mA) Collector Current IC (mA) 30 ED 30 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 5 GHz 20 MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 7 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 40 15 10 30 5 20 IC –5 –25 –20 –15 –10 10 –5 0 0 Pout 30 5 10 0 –5 –20 –15 10 30 5 20 IC –20 –15 –10 –5 0 5 0 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER IN U 40 20 Output Power Pout (dBm) 50 Collector Current IC (mA) VCE = 3 V, f = 3 GHz Icq = 12 mA (RF OFF) Pout –5 –25 –10 Input Power Pin (dBm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 0 20 IC 15 VCE = 3 V, f = 5.2 GHz Icq = 12 mA (RF OFF) 10 –5 0 0 Input Power Pin (dBm) 30 5 –5 –20 20 IC 0 –15 –10 –5 50 40 Pout 10 NT Output Power Pout (dBm) 15 40 10 Input Power Pin (dBm) 20 50 10 0 Collector Current IC (mA) 0 VCE = 3 V, f = 2 GHz Icq = 12 mA (RF OFF) Collector Current IC (mA) 20 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER ED Pout 50 Output Power Pout (dBm) 15 VCE = 3 V, f = 1 GHz Icq = 12 mA (RF OFF) Collector Current IC (mA) Output Power Pout (dBm) 20 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 0 5 Input Power Pin (dBm) DI SC O Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 8 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 25 5 4 20 3 15 2 10 NF 1 4 20 3 15 2 10 NF 1 0 0 100 10 1 20 15 2 10 1 1 10 Noise Figure NF (dB) 15 2 10 5 NF 1 0 100 10 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT VCE = 1 V f = 5.2 GHz Ga 12 14 14 12 12 10 10 8 8 6 6 4 4 NF 2 DI 2 0 20 3 0 1 10 0 100 Collector Current IC (mA) Noise Figure NF (dB) 14 30 25 Ga 4 1 0 100 SC O 0 5 NF VCE = 2 V f = 2 GHz NT 3 IN U Ga NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Noise Figure NF (dB) 25 6 Associated Gain Ga (dB) Noise Figure NF (dB) 30 Associated Gain Ga (dB) VCE = 1 V f = 2 GHz 4 0 100 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 5 10 Collector Current IC (mA) 6 25 VCE = 2 V f = 5.2 GHz Ga 14 12 10 10 8 8 6 6 4 4 NF 2 0 1 Associated Gain Ga (dB) 0 5 Ga 30 2 10 Associated Gain Ga (dB) 1 VCE = 2 V f = 1 GHz Associated Gain Ga (dB) Ga 6 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT ED Noise Figure NF (dB) 5 30 Noise Figure NF (dB) VCE = 1 V f = 1 GHz Associated Gain Ga (dB) 6 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 9 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 30 25 4 20 3 15 2 10 1 0 5 NF 1 0 100 10 VCE = 3 V f = 2 GHz Ga 4 25 20 3 15 2 10 1 0 NF 1 NT Noise Figure NF (dB) 5 30 Associated Gain Ga (dB) 6 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT IN U Collector Current IC (mA) ED Ga 5 Noise Figure NF (dB) VCE = 3 V f = 1 GHz Associated Gain Ga (dB) 6 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 0 100 10 Collector Current IC (mA) SC O 14 VCE = 3 V f = 5.2 GHz Noise Figure NF (dB) 12 10 Ga 14 12 10 8 8 6 6 4 4 DI 2 0 1 NF 10 2 Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 10 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] SC O NT IN U ED URL http://www.renesas.com/products/microwave/ DI <R> R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 11 of 12 A Business Partner of Renesas Electronics Corporation. NESG2021M05 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm) (Top View) (Bottom View) 2.05±0.1 IN U 1 4 0.30+0.1 –0.05 T1G 2 (1.05) 3 (0.65) 0.65 1.30 2.0±0.1 ED 1.25±0.1 0.59±0.05 0.11+0.1 –0.05 0.5 NT PIN CONNENTION 1. Base 2. Emitter 3. Collector 4. Emitter SC O Remark ( ) : Reference value DI <R> R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 12 of 12 Revision History NESG2021M05 Data Sheet Description Rev. − 3.00 Date Mar 2003 Jun 20, 2012 Page − Summary Previous No. : PU10188EJ02V0DS p.1 Modification of ORDERING INFORMATION p.2 Modification of ELECTRICAL CHARACTERISTICS ED Modification of hFE CLASSIFICATION Modification of S-PARAMETERS Modification of PACKAGE DIMENSIONS DI SC O NT IN U p.11 p.12 All trademarks and registered trademarks are the property of their respective owners. C-1