CEL NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
ORDERING INFORMATION
Part Number
Order Number
NESG3031M05
NESG3031M05-A
Package
Supplying Form
Flat-lead 4-pin thin-type super
50 pcs
• 8 mm wide embossed taping
minimold (M05, 2012 PKG)
(Non reel)
• Pin 3 (Collector), Pin 4 (Emitter) face the
(Pb-Free)
NESG3031M05-T1 NESG3031M05-T1-A
Quantity
Note
3 kpcs/reel
perforation side of the tape
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
150
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10414EJ03V0DS (3rd edition)
Date Published November 2005 CP(K)
The mark  shows major revised points.
NESG3031M05
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
100
nA
VCE = 2 V, IC = 6 mA
220
300
380
−
⏐S21e⏐
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
6.0
8.5
−
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.6
−
dB
Noise Figure (2)
NF
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.95
−
dB
Noise Figure (3)
NF
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
−
1.1
1.5
dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt
−
16.0
−
dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−
10.0
−
dB
Associated Gain (3)
Ga
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
7.5
9.5
−
dB
−
0.15
0.25
pF
11.0
14.0
−
dB
DC Current Gain
hFE
Note 1
RF Characteristics
2
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
Note
MSG
VCB = 2 V, IE = 0 mA, f = 1 MHz
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
3
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
−
13.0
−
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
−
18.0
−
dBm
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
2
Rank
FB
Marking
T1K
hFE Value
220 to 380
Data Sheet PU10414EJ03V0DS
NESG3031M05
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation Ptot (mW)
250
Mounted on glass epoxy PWB
(1.08 cm2 × 1.0 mm (t))
200
150
100
50
25
0
100
50
75
100
125
Reverse Transfer Capacitance Cre (pF)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
0.2
0.1
2
4
6
10
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
1
0.1
0.01
0.001
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.00001
0.4
0.5
0.6
0.7
0.8
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
VCE = 3 V
200 µ A
Collector Current IC (mA)
1
0.1
0.01
0.001
180 µ A
160 µ A
140 µ A
120 µ A
30
100 µ A
20
80 µ A
60 µ A
10
40 µ A
0.0001
0.00001
0.4
0.9
Base to Emitter Voltage VBE (V)
10
Collector Current IC (mA)
8
Ambient Temperature TA (˚C)
Collector Current IC (mA)
Collector Current IC (mA)
f = 1 MHz
0
150
10
100
0.3
IB = 20 µ A
0.5
0.6
0.7
0.8
0.9
1.0
0
Base to Emitter Voltage VBE (V)
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10414EJ03V0DS
3
NESG3031M05
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 2 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 1 V
100
10
0.1
1
10
10
0.1
100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
1
10
25
20
15
10
5
10
Collector Current IC (mA)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
100
30
VCE = 2 V
f = 2 GHz
20
15
10
5
10
100
25
VCE = 3 V
f = 2 GHz
20
15
10
5
0
1
Collector Current IC (mA)
10
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
100
VCE = 1 V
f = 2 GHz
0
1
100
Gain Bandwidth Product fT (GHz)
DC Current Gain hFE
10
0.1
Gain Bandwidth Product fT (GHz)
30
100
0
1
10
Collector Current IC (mA)
VCE = 3 V
25
1
Collector Current IC (mA)
1 000
30
100
Data Sheet PU10414EJ03V0DS
100
NESG3031M05
30
VCE = 1 V
IC = 20 mA
25 MSG
MAG
20
15
10
|S21e|
2
5
1
100
10
VCE = 3 V
IC = 20 mA
20
MAG
15
MSG
10
|S21e|2
1
MAG
20
MAG
15
MSG
10
|S21e|2
5
0
1
10
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
MAG
0
25
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
MSG
5
VCE = 2 V
IC = 20 mA
MSG
Frequency f (GHz)
30
25
30
Frequency f (GHz)
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
25
VCE = 1 V
f = 2.4 GHz
MSG
20
MAG
15
|S21e|2
10
5
0
–5
1
10
100
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2.4 GHz
25
MSG
MAG
20
15
|S21e|2
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
30
VCE = 3 V
f = 2.4 GHz
25
MSG
MAG
20
15
|S21e|2
10
5
0
Collector Current IC (mA)
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10414EJ03V0DS
5
NESG3031M05
VCE = 1 V
f = 5.2 GHz
20
MSG
15
MAG
10
|S21e|
2
5
0
–5
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
20
MSG
15
MAG
10
|S21e|2
5
0
–5
1
10
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
VCE = 3 V
f = 5.2 GHz
20
15 MSG
10
MAG
|S21e|
2
5
0
–5
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
25
VCE = 1 V
f = 5.8 GHz
20
15
MSG
MAG
10
|S21e|2
5
0
–5
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
VCE = 2 V
f = 5.8 GHz
20
15
MAG
10
|S21e|2
5
0
–5
1
10
100
25
VCE = 3 V
f = 5.8 GHz
20
15
MAG
10
|S21e|2
5
0
–5
Collector Current IC (mA)
1
10
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
6
VCE = 2 V
f = 5.2 GHz
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Data Sheet PU10414EJ03V0DS
100
NESG3031M05
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
50
20
50
5
20
IC
0
10
–5
–20
–15
–10
–5
0
10
0
–10
–5
0
5
0
10
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
5
16
4
2
8
4
NF
Noise Figure NF (dB)
Noise Figure NF (dB)
20
IC
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
12
1
30
5
–5
–15
0
3
0
Pout
10
Input Power Pin (dBm)
Ga
1
40
Input Power Pin (dBm)
5
4
5
15
15
12
Ga
3
9
2
6
1
10
3
NF
VCE = 2 V
f = 2.4 GHz
Associated Gain Ga (dB)
30
Output Power Pout (dBm)
Pout
10
Collector Current IC (mA)
40
Associated Gain Ga (dB)
Output Power Pout (dBm)
15
Collector Current IC (mA)
VCE = 3 V, f = 5.8 GHz
IC (set) = 20 mA
VCE = 3 V, f = 2.4 GHz
IC (set) = 20 mA
VCE = 2 V
f = 5.8 GHz
0
100
0
1
Collector Current IC (mA)
10
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10414EJ03V0DS
7
NESG3031M05
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm)
2.05±0.1
2
0.59±0.05
0.11+0.1
–0.05
1
4
0.30+0.1
–0.05
T1K
0.65
0.65
1.30
2.0±0.1
3
1.25±0.1
PIN CONNECTIONS
1.
2.
3.
4.
8
Base
Emitter
Collector
Emitter
Data Sheet PU10414EJ03V0DS
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
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suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.