A Business Partner of Renesas Electronics Corporation. Preliminary NESG210719 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) FEATURES ED <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) ORDERING INFORMATION Part Number Order Number NESG210719 NESG210719-A NESG210719-T1 NESG210719-T1-A Package Quantity Supplying Form IN U <R> 3-pin ultra super minimold (19, 1608 PKG) (Pb-Free) 50 pcs (Non reel) • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Symbol Ratings Unit VCBO 13.0 V VCEO 5.5 V VEBO 1.5 V IC 100 mA 200 mW Ptot Note SC O Total Power Dissipation NT ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB DI <R> CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 1 of 8 A Business Partner of Renesas Electronics Corporation. NESG210719 <R> ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics ICBO VCB = 5 V, IE = 0 − − 100 nA Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 − − 100 nA 140 180 220 − Note 1 VCE = 1 V, IC = 5 mA Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz Gain Bandwidth Product (2) fT DC Current Gain hFE RF Characteristics VCE = 1 V, IC = 20 mA, f = 2 GHz Insertion Power Gain (1) S21e 2 Insertion Power Gain (2) S21e 2 VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 1 V, IC = 20 mA, f = 2 GHz NF Associated Gain Ga VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt Reverse Transfer Capacitance Cre Note 2 7 10 − GHz − 12 − GHz 6.5 8 − dB − 9 − dB − 0.9 1.5 dB IN U Noise Figure VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt ED Collector Cut-off Current VCB = 1 V, IE = 0, f = 1 MHz 6 9 − dB − 0.5 0.7 pF Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% hFE CLASSIFICATION FB/YFB Marking D7 hFE Value 140 to 220 SC O Rank DI <R> NT 2. Collector to base capacitance when the emitter grounded R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 2 of 8 A Business Partner of Renesas Electronics Corporation. NESG210719 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 300 Mounted on glass epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 250 200 mW 200 150 100 50 25 0 50 75 100 125 0.3 0.2 0.1 2 4 6 8 10 12 IN U Collector Current IC (mA) 1 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 2 V 10 1 0.1 NT Collector Current IC (mA) 10 0.01 0.4 100 VCE = 1 V 0.1 0.5 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 f = 1 MHz 0.6 0 150 Ambient Temperature TA (˚C) 0.7 ED TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.01 0.001 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 SC O Base to Emitter Voltage VBE (V) 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 800 μA 720 μA 640 μA 80 560 μA 480 μA 60 400 μA 320 μA 40 240 μA 160 μA 20 DI Collector Current IC (mA) 100 0 1 2 3 IB = 80 μ A 4 5 6 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 3 of 8 A Business Partner of Renesas Electronics Corporation. NESG210719 1 10 VCE = 2 V 100 ED 100 10 0.1 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 1 V DC Current Gain hFE DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 10 0.1 100 1 100 IN U VCE = 3 V NT DC Current Gain hFE DC CURRENT GAIN vs. COLLECTOR CURRENT 10 0.1 100 Collector Current IC (mA) Collector Current IC (mA) 1 000 10 1 10 100 Collector Current IC (mA) 18 16 VCE = 1 V f = 2 GHz 14 12 10 8 6 4 2 DI Gain Bandwidth Product fT (GHz) 20 0 1 10 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 Gain Bandwidth Product fT (GHz) SC O GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 18 16 VCE = 2 V f = 2 GHz 14 12 10 8 6 4 2 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 4 of 8 A Business Partner of Renesas Electronics Corporation. 35 VCE = 1 V IC = 5 mA 30 25 20 MSG MAG 15 10 5 0 0.1 MAG MSG |S21e|2 1 10 100 35 25 20 15 10 5 0 0.1 15 MAG 10 5 0 0.1 |S21e|2 1 MSG 10 MAG |S21e|2 MAG MSG 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY IN U MSG MAG Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 35 100 Frequency f (GHz) VCE = 2 V IC = 20 mA 30 25 MSG 20 MAG 15 NT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 2 V IC = 5 mA 25 MSG Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 30 VCE = 1 V IC = 20 mA 30 Frequency f (GHz) 35 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY ED INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) NESG210719 10 |S21e|2 MAG MSG 5 0 0.1 1 10 100 Frequency f (GHz) DI SC O Remark The graphs indicate nominal characteristics. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 5 of 8 A Business Partner of Renesas Electronics Corporation. 25 20 VCE = 1 V f = 1 GHz MSG MAG 15 |S21e|2 10 5 0 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 15 VCE = 1 V f = 2 GHz 10 |S21e|2 5 0 −5 1 10 |S21e|2 −5 1 10 VCE = 2 V f = 1 GHz 15 100 MSG MAG |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT VCE = 2 V f = 2 GHz 15 MSG MAG 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) 2 20 Insertion Power Gain |S21e| (dB) Maximum Available Power Gain MAG (dB) Collector Current IC (mA) DI Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 NT 0 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT IN U MAG 5 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 1 V f = 4 GHz SC O Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT MSG MAG ED INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) NESG210719 10 VCE = 2 V f = 4 GHz MAG 5 |S21e|2 0 −5 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 6 of 8 A Business Partner of Renesas Electronics Corporation. NESG210719 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] SC O NT IN U ED URL http://www.renesas.com/products/microwave/ DI <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 7 of 8 A Business Partner of Renesas Electronics Corporation. NESG210719 PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm) 1.6±0.1 0.2+0.1 –0 0.8±0.1 0.15+0.1 –0.05 IN U 0 to 0.1 0.6 0.75±0.05 1 ED 3 0.3+0.1 –0 0.5 1.0 0.5 D7 1.6±0.1 2 PIN CONNECTIONS DI SC O NT 1. Emitter 2. Base 3. Collector R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 8 of 8 Revision History NESG210719 Data Sheet Description Date Page Summary 0.01 Oct 15, 2003 – Preliminary edition issued 1.00 Oct 13, 2004 – First edition issued 2.00 Aug 23, 2005 – Second edition issued 3.00 Jan 21, 2008 – Third edition issued 4.00 Sep 24, 2012 Throughout ED Rev. The company name is changed to Renesas Electronics Corporation. Modification of FEATURES p.1 Modification of ORDERING INFORMATION p.1 Modification of ABSOLUTE MAXIMUM RATINGS p.2 Modification of ELECTRICAL CHARACTERISTICS p.2 Modification of hFE CLASSIFICATION p.7 Modification of method for obtaining S-parameters DI SC O NT IN U p.1 All trademarks and registered trademarks are the property of their respective owners. C-1