A Business Partner of Renesas Electronics Corporation. Preliminary NE5820M53 Data Sheet R09DS0005EJ0200 Rev.2.00 May 20, 2011 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone. The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting. FEATURES • • • • • • Low noise : NV = −114 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 15 kΩ Low input capacitance : Ciss = 1.5 pF TYP. @VDD = 2.0 V, RL = 15 kΩ Low consumption current : IDD = 85 μATYP. @VDD = 2.0 V, RL = 15 kΩ High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) Built-in the capacitor for RF noise immunity High ESD voltage APPLICATIONS • Microphone, Sensor etc. ORDERING INFORMATION Part Number NE5820M53-T1 Order Number NE5820M53-T1-A Package 3-pin thin-type lead-less minimold (Pb-Free) Quantity 10 kpcs/reel Marking B8 Supplying Form • Embossed tape 8 mm wide • Pin 3 face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5820M53 CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0005EJ0200 Rev.2.00 May 20, 2011 Page 1 of 6 A Business Partner of Renesas Electronics Corporation. NE5820M53 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) <R> Parameter Input Voltage (IN-GND) Input Current (IN-GND) Output Voltage (OUT-GND) Output Current (OUT-GND) Channel Temperature Operating Ambient Temperature Storage Temperature Symbol Vin Iin Vout Iout Tch TA Tstg Ratings −0.8 to +0.8 0.5 −0.5 to +6 17 130 −40 to +95 −65 to +150 Unit V mA V mA °C °C °C RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Supply Voltage Note Note: Symbol VDD MIN. 1.0 TYP. 2.0 MAX. 10.0 Unit V RL = 15 kΩ ELECTRICAL CHARACTERISTICS (TA = +25°C, RL = 15 kΩ, unless otherwise specified) Parameter Consumption Current Input Capacitance Voltage Gain Symbol IDD Ciss GV Reduced Voltage Characteristics ΔGVV Frequency Characteristics ΔGVf Output Noise Voltage Total Harmonic Distortion NV THD Test Conditions VDD = 2 V, Vin = 0 V MIN. 60 TYP. 85 MAX. 105 Unit μA VDD = 2 V, f = 1 MHz VDD = 2 V, Vin = 10 mVrms, Cin = 3 pF, f = 1 kHz, see TEST CIRCUIT VDD = 2 → 1.5 V, Vin = 10 mVrms, Cin = 3 pF, f = 1 kHz, see TEST CIRCUIT VDD = 2 V, Vin = 10 mVrms, Cin = 3 pF, f = 1 kHz → 110 Hz, see TEST CIRCUIT VDD = 2 V, Vin = 0 Vrms, Cin = 3 pF, A-Curve, see TEST CIRCUIT VDD = 2 V, Vout = 30 mVrms, Cin = 3 pF, f = 1 kHz, see TEST CIRCUIT − −4.5 1.5 −3.0 − − pF dB − 0.3 − dB − 0.05 − dB − −114 − dBV − 0.1 − % TEST CIRCUIT Voltage Gain, Frequency Characteristics, Output Noise Voltage, Total Harmonic Distortion VDD 15 kΩ + <R> Vout 33 μF Vin R09DS0005EJ0200 Rev.2.00 May 20, 2011 3 pF Page 2 of 6 A Business Partner of Renesas Electronics Corporation. NE5820M53 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) CONSUMPTION CURRENT vs. SUPPLY VOLTAGE VOLTAGE GAIN vs. SUPPLY VOLTAGE 600 0 500 Voltage Gain GV (dB) Consumption Current IDD (μA) RL = 15 kΩ 400 300 200 –4 Cin = 3 pF RL = 15 kΩ Vin = 10 mVrms f = 1 kHz –6 –8 1 2 3 4 5 6 7 8 9 0 10 2 4 3 5 6 9 8 7 Supply Voltage VDD (V) OUTPUT NOISE VOLTAGE vs. SUPPLY VOLTAGE VOLTAGE GAIN vs. FREQUENCY 10 0 –100 –110 0 1 3 2 4 5 6 7 8 Voltage Gain GV (dB) Cin = 3 pF RL = 15 kΩ Vin = 0 Vrms –120 1 Supply Voltage VDD (V) –90 Output Noise Voltage NV (dBV) –2 100 0 0 –4 –6 VDD = 2 V Cin = 3 pF RL = 15 kΩ Vin = 10 mVrms 10 100 1 000 10 000 100 000 Supply Voltage VDD (V) Frequency f (Hz) TOTAL HARMONIC DISTORTION vs. OUTPUT VOLTAGE VOLTAGE GAIN vs. CONSUMPTION CURRENT 0 Voltage Gain GV (dB) VDD = 2 V Cin = 3 pF 10 RL = 15 kΩ f = 1 kHz 1 0.1 0.01 0.001 10 –2 –8 1 10 9 100 Total Harmonic Distortion THD (%) <R> 100 1 000 Output Voltage Vout (mVrms) –2 –4 VDD = 2 V –6 Cin = 3 pF RL = 15 kΩ Vin = 10 mVrms f = 1 kHz –8 40 60 80 100 120 Consumption Current IDD (μA) Remark The graphs indicate nominal characteristics. R09DS0005EJ0200 Rev.2.00 May 20, 2011 Page 3 of 6 A Business Partner of Renesas Electronics Corporation. NE5820M53 OUTPUT NOISE VOLTAGE vs. INPUT CAPACITANCE VOLTAGE GAIN vs. INPUT CAPACITANCE –2 –90 VDD = 2 V RL = 15 kΩ Vin = 10 mVrms f = 1 kHz Output Noise Voltage NV (dBV) Voltage Gain GV (dB) 0 –4 –6 –8 0 1 2 3 4 5 6 Input Capacitance Cin (pF) VDD = 2 V RL = 15 kΩ Vin = 0 Vrms –100 –110 –120 0 1 2 3 4 5 6 Input Capacitance Cin (pF) Remark The graphs indicate nominal characteristics. R09DS0005EJ0200 Rev.2.00 May 20, 2011 Page 4 of 6 A Business Partner of Renesas Electronics Corporation. NE5820M53 PACKAGE DIMENSIONS (0.8) (Bottom View) 1.0±0.1 (0.8) 3 0.30+0.1 –0.05 1 1.2±0.1 B8 1.2±0.05 0.15+0.1 –0.05 3-PIN THIN-TYPE LEAD-LESS MINIMOLD (UNIT: mm) 0.15+0.1 –0.05 2 (0.2) MAX. 0.33 0.11+0.1 –0.05 (0.2) PIN CONNECTIONS 1. OUT 2. IN 3. GND Remark ( ): Reference value R09DS0005EJ0200 Rev.2.00 May 20, 2011 Page 5 of 6 A Business Partner of Renesas Electronics Corporation. NE5820M53 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Condition Symbol IR260 Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0005EJ0200 Rev.2.00 May 20, 2011 Page 6 of 6 Revision History Rev. 1.00 2.00 Date Jul 9, 2010 May 20, 2011 NE5820M53 Data Sheet Description Summary Page − p. 2 First edition issued p. 2 RECOMMENDED OPERATING RANGE: Supply Voltage MIN. 1.5 → 1.0, MAX. 5.0 → 10.0 p. 3 TYPICAL CHARACTERISTICS: Modification of CONSUMPTION CURRENT vs. SUPPLY VOLTAGE, VOLTAGE GAIN vs. SUPPLY VOLTAGE, OUTPUT NOISE VOLTAGE vs. SUPPLY VOLTAGE ABSOLUTE MAXIMUM RATINGS: Operating Ambient Temperature −40 to +85 → −40 to +95 All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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