RENESAS H7N1004FM

H7N1004FM
Silicon N-Channel MOSFET
High-Speed Power Switching
REJ03G0073-0100Z
(Previous ADE-208-1463A(Z))
Rev.1.00
Aug.27.2003
Features
•
•
•
•
Low on-resistance
RDS(on) = 25 mΩ typ.
Low drive current
Available for 4.5 V gate drive
Outline
TO-220FM
D
G
1 2
S
Rev.1.00, Aug.27.2003, page 1 of 9
1. Gate
2. Drain
3. Source
3
H7N1004FM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
25
A
Note1
Drain peak current
ID (pulse)
100
A
Body-drain diode reverse drain
current
IDR
100
A
Avalanche current
IAP Note 3
15
A
EAR
Note 3
22.5
mJ
Channel dissipation
Pch
Note 2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Avalanche energy
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Aug.27.2003, page 2 of 9
H7N1004FM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
100
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
ID = 1 mA, VDS = 10 V Note 1
Static drain to source on state
RDS(on)
—
25
35
mΩ
ID = 12.5 A, VGS = 10 V Note 1
—
30
45
mΩ
ID = 12.5 A, VGS = 4.5 V Note 1
resistance
Forward transfer admittance
|yfs|
20
35
—
S
ID = 12.5 A, VGS = 10 V Note 1
Input capacitance
Ciss
—
2800
—
pF
VDS = 10 V
Output capacitance
Coss
—
240
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
140
—
pF
f = 1 MHz
Total gate charge
Qg
—
50
—
nC
VDD = 50 V
Gate to source charge
Qgs
—
9
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
11
—
nC
ID = 25 A
Turn-on delay time
td(on)
—
23
—
ns
VGS = 10 V, ID = 12.5 A
Rise time
tr
—
110
—
ns
RL = 2.4 Ω
Turn-off delay time
td(off)
—
70
—
ns
Rg = 4.7 Ω
Fall time
tf
—
9.5
—
ns
Body-drain diode forward voltage
VDF
—
0.89
—
V
IF = 25 A, VGS = 0
—
45
—
ns
IF = 25 A, VGS = 0
diF/dt = 100 A/µs
Body-drain diode reverse recovery trr
time
Notes: 1. Pulse test
Rev.1.00, Aug.27.2003, page 3 of 9
H7N1004FM
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
30
20
10
10
50
100
150
Case Temperature
1
1m
ms
s
0.3
0.1 Operation in
200
Tc (°C)
0.03 limited by RDS(on)
Ta = 25°C
0.01
3
30
0.1 0.3
1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
Pulse Test
10 V
6V
V DS = 10 V
Pulse Test
4V
3.5 V
20
10
Drain Current I D (A)
40
30
30
20
10
VGS = 3 V
0
10
(1
O
sh
c = pe
ot)
r
a
25 tio
°C n
)
(T
3
Typical Output Characteristics
50
40
DC
=
10
µ
0µ s
s
10
this area is
0
Drain Current I D (A)
PW
30
Drain Current I D (A)
Channel Dissipation
Pch (W)
40
2
4
6
8
10
Drain to Source Voltage V DS (V)
Rev.1.00, Aug.27.2003, page 4 of 9
-25°C
25°C
Tc = 75°C
0
3
4
5
2
1
Gate to Source Voltage V GS (V)
H7N1004FM
Drain to Source Saturation Voltage
V DS(on) (V)
1.0
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
Pulse Test
0.8
0.6
I D = 20 A
0.4
10 A
0.2
5A
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
V GS = 4.5 V
20
10 V
10
5
0
5
10
15
1
20
Gate to Source Voltage VGS (V)
80
I D = 20 A
5, 10 A
60
40
V GS = 4.5 V
I D = 20 A
5, 10 A
20
V GS = 10 V
0
–25
0
25
50
75
100 125 150
Case Temperature Tc
Rev.1.00, Aug.27.2003, page 5 of 9
(°C)
5
10 20
50
Drain Current I D (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
2
100
Tc = –25°C
10
1
0.1
25°C
75°C
V DS = 10 V
Pulse Test
0.01
0.01
0.1
1
10
Drain Current I D (A)
100
H7N1004FM
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
Ciss
2000
1000
500
200
Coss
100
50
10
0.1
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
Crss
VGS = 0
f = 1 MHz
20
10
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
10
16
12
80
0
8
V DD = 100 V
50 V
25 V
20
40
60
80
Gate Charge Qg (nC)
Rev.1.00, Aug.27.2003, page 6 of 9
4
VDS
0
100
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty ≤ 1%
R G = 4.7 Ω
Switching Time t (ns)
VGS
120
40
40
50
1000
20
Gate to Source Voltage V GS (V)
Drain to source Voltage V DS (V)
V DD = 25 V
50 V
160
100 V
I D = 25 A
30
Switching Characteristics
Dynamic Input Characteristics
200
20
Drain to Source Voltage V DS (V)
100
tr
t d(off)
t d(on)
tf
10
1
0.1
0.3
1
3
10
30
Drain Current I D (A)
100
H7N1004FM
Maximum Avalanche Energy vs.
Channel Temperature Derating
EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
0, -5 V
V GS = 10 V
40
Repetitive Avalanche Energy
Reverse Drain Current I DR (A)
50
30
5V
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
Source Drain Voltage
VSD
2.0
40
I AP = 15 A
V DD = 50 V
duty < 0.1 %
Rg > 50 Ω
32
24
16
8
0
25
(V)
Avalanche Test Circuit
50
75
100
Channel Temperature
125
150
Tch (°C)
Avalanche Waveform
EAR =
L
V DS
Monitor
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
Rev.1.00, Aug.27.2003, page 7 of 9
VDD
H7N1004FM
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1
0.1
0.05
0.03
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 5°C/W, Tc = 25°C
0.02
1
0.0
0.01
e
uls
PDM
p
ot
D=
h
1s
PW
T
PW
T
10 µ
100 µ
1m
10 m
100 m
Pulse Width PW (s)
Switching Time Test Circuit
10
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
1
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 30 V
Vout
10%
10%
90%
td(on)
Rev.1.00, Aug.27.2003, page 8 of 9
tr
10%
90%
td(off)
tf
H7N1004FM
Package Dimensions
10.0 ± 0.3
φ 3.2 ± 0.2
As of January, 2003
2.5 ± 0.2
Unit: mm
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
4.45 ± 0.3
2.5
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
7.0 ± 0.3
2.8 ± 0.2
0.5 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, Aug.27.2003, page 9 of 9
TO-220FM
—
Conforms
1.8 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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