HAT2267H Silicon N Channel Power MOS FET Power Switch REJ03G1463-0400 Rev.4.00 Jul 05, 2006 Features • • • • • High speed switching Capable of 6 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 13 mΩ typ. (at VGS = 10 V) • Lead Free Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 3 12 4 G 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.4.00 Jul 05, 2006 page 1 of 7 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Ratings 80 ±20 25 100 25 15 30 Unit V V A A A A mJ Pch Note3 θch-C Tch Tstg 25 5 150 –55 to +150 °C/W °C °C W HAT2267H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.4.00 Jul 05, 2006 page 2 of 7 Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 80 — — 2.0 — — 25 — — — — — — — — — — Typ — — — — 13 15 50 2150 330 130 0.5 30 9.0 6.5 7.5 9 35 Max — ±0.1 1 4.0 16 21 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns — — — 5 0.83 40 — 1.08 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 12.5 A, VGS = 10 V Note4 ID = 12.5 A, VGS = 6 V Note4 ID = 12.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 25 A VGS = 10 V, ID = 12.5 A, VDD ≅ 30 V, RL = 2.4 Ω, Rg = 4.7 Ω IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0, diF/ dt = 100 A/ µs HAT2267H Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 10 µs Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 100 10 ra tio n 1 0.1 Operation in this area is limited by RDS(on) Tc = 25 °C Ta = 25°C 1 shot Pulse 0 50 100 150 0.01 0.01 200 Case Temperature Tc (°C) 4.7 V 4.5 V Drain Current ID (A) 4.1 V 3.9 V 10 100 VDS = 10 V Pulse Test 10 V 20 10 Typical Transfer Characteristics Pulse Test 4.3 V 30 1 50 5.3 V 40 0.1 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 Drain Current ID (A) 1 0 PW 1 m 0 µs s = DC 10 m Op s e VGS = 3.5 V 40 30 20 Tc = 75°C 10 25°C –25°C 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 250 Pulse Test 200 150 ID = 10 A 100 5A 50 0 2A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.4.00 Jul 05, 2006 page 3 of 7 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 100 30 VGS = 6 V 10 10 V 3 Pulse Test 1 1 3 10 30 100 300 Drain Current ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 50 Forward Transfer Admittance vs. Drain Current Pulse Test 40 ID = 2 A, 5 A, 10 A 30 VGS = 6 V 20 2 A, 5 A, 10 A 10 VGS = 10 V 0 –25 0 25 50 75 100 125 150 Tc = –25°C 30 75°C 25°C 10 3 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 1 3 10 30 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 100 Capacitance C (pF) 10000 50 20 0.3 1 3 10 1000 300 Coss 100 Crss VGS = 0 f = 1 MHz 10 100 30 Ciss 3000 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C 0 10 20 40 30 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 100 ID = 25 A VGS 80 VDD = 40 V 25 V 10 V 60 16 12 VDS 40 8 20 4 VDD = 40 V 25 V 10 V 0 20 40 60 80 Gate Charge Qg (nc) Rev.4.00 Jul 05, 2006 page 4 of 7 0 100 1000 Switching Time t (ns) 10 0.1 0 100 Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2267H VGS = 10 V, VDS = 30 V RG = 4.7 Ω, duty ≤ 1 % 300 100 td(off) 30 10 tr td(on) tf 3 1 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 HAT2267H Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 40 10 V 30 5V 20 VGS = 0, –5 V 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 50 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) IAP = 15 A VDD = 50 V duty < 0.1% Rg ≥ 50 Ω Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 5°C/ W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 0.0 0.01 10 µ D= lse t ho PW T PW T pu 1s 100 µ 1m 100 m 10 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 2 L • IAP2• VDSS VDSS – VDD IAP Monitor Rg Vin 15 V D. U. T V(BR)DSS IAP VDD VDS ID 50 Ω 0 Rev.4.00 Jul 05, 2006 page 5 of 7 VDD HAT2267H Switching Time Test Circuit 90% Vout Monitor Vin Monitor Rg Waveform D.U.T. RL Vin Vout Vin 10 V VDD = 30 V 10% 10% 90% td(on) Rev.4.00 Jul 05, 2006 page 6 of 7 10% tr 90% td(off) tf HAT2267H Package Dimensions JEITA Package Code SC-100 Previous Code LFPAKV RENESAS Code PTZZ0005DA-A 4.9 5.3 Max 4.0 ± 0.2 MASS[Typ.] 0.080g +0.05 3.3 1.0 0.25 –0.03 Unit: mm 4.2 6.1 –0.3 +0.1 3.95 5 4 +0.05 0.20 –0.03 1.1 Max +0.03 0.07 –0.04 0° – 8° +0.25 1 0.6 –0.20 1.3 Max Package Name LFPAK 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2267H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Jul 05, 2006 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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