BCR20KM-12L Triac Medium Power Use REJ03G0329-0200 Rev.2.00 Nov.09.2004 Features • • • • • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 IT (RMS) : 20 A VDRM : 600 V IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5 Viso : 2000 V Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.09.2004, page 1 of 6 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V BCR20KM-12L Parameter RMS on-state current Symbol IT (RMS) Ratings 20 Unit A Surge on-state current ITSM 200 A I2 t 167 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 2000 W W V A °C °C g V Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 85°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 30 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30Note5 30Note5 30Note5 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2 — — — — 2.0 V °C/W Gate non-trigger voltage Thermal resistance Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10 — — V/µs Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –10 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00, Nov.09.2004, page 2 of 6 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR20KM-12L Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 103 On-State Current (A) 3 2 102 7 5 Tj = 125°C 3 2 101 7 5 Tj = 25°C 3 2 Surge On-State Current (A) 240 7 5 7 5 VGT = 1.5V PG(AV) = 0.5W IGM = 2A 100 IFGT I, IRGT I, IRGT III Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) PGM = 5W 3 5 7 101 2 3 5 7 102 103 Typical Example 7 5 3 2 102 IFGT I 7 5 3 2 IRGT I IRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Nov.09.2004, page 3 of 6 Transient Thermal Impedance (°C/W) Gate Voltage (V) VGM = 10V 10–1 1 10 2 3 5 7102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 2 Gate Trigger Current vs. Junction Temperature VGD = 0.2V Rev.2.00, 40 Gate Characteristics (I, II and III) 101 3 2 80 Conduction Time (Cycles at 60Hz) 7 5 7 5 120 On-State Voltage (V) 102 3 2 160 0 100 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 3 2 200 102 2 3 5 7103 2 3 5 7 104 2 3 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR20KM-12L Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 20 10 0 5 10 Ambient Temperature (°C) 20 25 30 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 5 10 15 20 25 30 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted aluminum and greased Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 140 120 100 160 × 160 × t2.3 80 100 × 100 × t2.3 60 40 60 × 60 × t2.3 20 0 Curves apply regardless 140 of conduction angle RMS On-State Current (A) 160 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 15 0 5 10 15 20 25 160 Ambient Temperature (°C) 0 Rev.2.00, Case Temperature (°C) 30 360° Conduction Resistive, inductive loads Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 Typical Example 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Nov.09.2004, page 4 of 6 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) 40 103 7 5 4 3 Typical Example 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Latching Current vs. Junction Temperature 103 Distribution T2+, G– Typical Example 3 2 102 7 5 3 2 101 7 5 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 3 T2+, G+ 2 T2–, G– Typical Example 100 –60 –40 –20 0 20 40 60 80 100 120 140 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 140 Typical Example Tj = 125°C 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7104 102 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Latching Current (mA) 7 5 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) BCR20KM-12L IT 3 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 Typical Example 7 5 3 2 IRGT I IFGT I 7 5 III Quadrant 3 2 I Quadrant 100 7 3 5 7 101 6Ω A 2 3 5 7 102 Nov.09.2004, page 5 of 6 V V 330Ω Test Procedure II A 6V 5 7 101 7 102 A 6V 330Ω 2 3 5 6Ω 6Ω 2 3 Gate Trigger Characteristics Test Circuits 3 101 0 10 2 Rate of Decay of On-State Commutating Current (A/ms) Test Procedure I 7 5 Gate Current Pulse Width (µs) Rev.2.00, Time Minimum Characteristics Value V 102 (di/dt)c τ Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz 101 6V IRGT III VD 2 Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width Time Main Voltage 7 (dv/dt)c 5 Main Current 330Ω Test Procedure III BCR20KM-12L Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.09.2004, page 6 of 6 Standard order code example BCR20KM-12LA BCR20KM-12LA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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