DIODES DMB54D0UDW-7

DMB54D0UDW
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
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Features
Mechanical Data
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N-Channel MOSFET and PNP Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
ESD Protected MOSFET Gate up to 2kV
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42 lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.006 grams (approximate)
SOT-363
D2
B
E
Q1
S2
ESD protected gate up to 2kV
Q2
G2
C
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings – MOSFET, Q1
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
@TA = 25°C unless otherwise specified
Continuous
Symbol
VDSS
VGSS
ID
IDM
Value
50
±12
160
560
Units
V
V
mA
mA
Value
-50
-45
-5.0
-100
Unit
V
V
V
mA
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings - PNP Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Characteristics, Total Device
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
Symbol
VCBO
VCEO
VEBO
IC
@TA = 25°C unless otherwise specified
Symbol
PD
RθJA
TJ, TSTG
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
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December 2009
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DMB54D0UDW
Electrical Characteristics - MOSFET
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
50
⎯
⎯
⎯
⎯
10
V
μA
IGSS
⎯
⎯
1.0
μA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
0.7
⎯
⎯
0.8
3.1
4
1.0
4
5
Gate-Body Leakage
5.0
V
Ω
Forward Transconductance
gFS
180
⎯
⎯
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
⎯
⎯
⎯
25
5
2.1
⎯
⎯
⎯
pF
pF
pF
Test Condition
VGS = 0V, ID = 250μA
VDS = 50V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4V, ID = 100mA
VGS = 2.5V, ID = 80mA
VDS = 10V, ID = 100mA,
f = 1.0KHz
VDS = 10V, VGS = 0V,
f = 1.0MHz
Electrical Characteristics - PNP Transistor @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage (Note 4)
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage (Note 4)
DC Current Gain (Note 4)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
Min
-50
-45
-5
220
Collector-Emitter Saturation Voltage (Note 4)
VCE(SAT)
—
Base-Emitter Saturation Voltage (Note 4)
VBE(SAT)
Base-Emitter Voltage (Note 4)
VBE(ON)
Collector-Cutoff Current (Note 4)
Collector-Emitter Cut-Off Current
Gain Bandwidth Product
Output Capacitance
Noise Figure
Notes:
Typ
—
—
—
290
—
—
Max
—
—
—
475
-100
-400
—
—
-700
-900
—
—
mV
-600
—
—
—
-750
-820
mV
ICES
fT
COB
—
—
—
100
—
—
—
—
—
—
-15
-4.0
-100
—
4.5
nA
µA
nA
MHz
pF
NF
—
—
10
dB
ICBO
(Note 4)
Unit
V
V
V
—
mV
Test Condition
IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCB = -30V
VCB = -30V, TA = 150°C
VCE = -45V
VCE = -5.0V, IC = -10mA, f = 100MHz
VCB = -10V, f = 1.0MHz
IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz
4. Short duration pulse test used to minimize self-heating effect.
DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
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December 2009
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DMB54D0UDW
MOSFET
0.8
0.5
VGS = 10V
0.7
VDS = 10V
0.4
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.5V
0.6
0.5
VGS = 3.0V
0.4
VGS = 2.5V
0.3
0.2
TA = 85°C
TA = 25°C
TA = -55°C
0.3
T A = 150°C
TA = 125°C
0.2
0.1
0.1
VGS = 1.5V
VGS = 1.0V
0
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
0
5
10
VGS = 2.5V
VGS = 4.0V
1
0.001
0.01
0.1
ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
4
Fig. 2 Typical Transfer Characteristics
10
2.0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1
0
0.1
0.2
0.3
0.4
0.5
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
35
1.8
30
VGS = 4V
ID = 100mA
1.6
1.4
C, CAPACITANCE (pF)
RDS(ON), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1
2
3
VGS, GATE SOURCE VOLTAGE (V)
VGS = 2.5V
ID = 80mA
1.2
1.0
0.8
25
Ciss
20
f = 1MHz
VGS = 0V
15
10
5
0.6
0.4
-50
Document number: DS31677 Rev. 4 - 2
Crss
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMB54D0UDW
Coss
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0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
40
December 2009
© Diodes Incorporated
DMB54D0UDW
MOSFET (continued)
1
1.0
0.9
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.1
ID = 250µA
0.8
0.7
0.1
TA = 150°C
0.01
TA = 125°C
TA = 85°C
0.001
TA = 25°C
T A = -55°C
0.6
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.0001
0.1
0.3
0.5
0.7
0.9
1.1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
RθJA = 500°C/W
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (° C)
Fig. 9 Derating Curve - Total Package Power Dissipation
DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
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December 2009
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DMB54D0UDW
PNP Transistor
0.5
TA = 150°C
VCE = 5V
IC
IB = 10
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
1,000
100
T A = 25°C
TA = -50°C
10
0.4
0.3
TA = 25°C
0.2
T A = 150°C
0.1
T A = -50°C
0
0.1
1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 10 Typical DC Current Gain vs. Collector Current
1,000
10
100
1
IC, COLLECTOR CURRENT (mA)
Fig. 11 Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
ft, GAIN-BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current
1
Ordering Information
(Note 5)
Part Number
DMB54D0UDW-7
Notes:
Case
SOT-363
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
MB2
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
Mar
3
YM
Marking Information
2010
X
Apr
4
MB2 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2011
Y
May
5
Jun
6
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2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
December 2009
© Diodes Incorporated
DMB54D0UDW
Package Outline Dimensions
A
B C
H
K
M
J
D
F
L
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
X
DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
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DMB54D0UDW
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
7 of 7
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December 2009
© Diodes Incorporated