DRDNB21D COMPLEX ARRAY FOR DUAL RELAY DRIVER Features and Benefits Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Two Pre-Biased Transistors and Two Switching Diodes, Internally Connected in One Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0062 grams (approximate) • • • • R1 = R3 = 2.2kΩ (nominal) R2 = R4 = 47kΩ (nominal) 6 4 5 5 D1 R1 R3 D2 1 3 R1 R2 R3 Q1 6 R4 Q2 R2 1 4 R4 3 2 2 Top View Top View Device Circuit Ordering Information (Note 3) Device DRDNB21D-7 Notes: Packaging SOT-363 Shipping 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, visit our website at http://www.diodes.com. Marking Information Date Code Key Year 2005 Code S Month Code Jan 1 2006 T Feb 2 DRDNB21D Document number: DS30756 Rev. 6 - 2 2007 U Mar 3 2008 V Apr 4 RD08 = Product Type Marking Code YM = Date Code Marking Y = Year (e.g. T = 2006) M = Month (e.g. 1 = January) YM RD08 2009 W May 5 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 1 of 7 www.diodes.com February 2011 © Diodes Incorporated DRDNB21D Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Operating and Storage Junction Temperature Range Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Unit mW °C/W °C Maximum Ratings, Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Emitter Voltage Base-Emitter Voltage Output Current Peak Collector Current Symbol VCC Vin IO ICM Value 50 -5 to +12 100 100 Unit V V mA mA Value 100 Unit V 75 V 53 500 250 4.0 1.0 V mA mA Maximum Ratings, Switching Diode @TA = 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Symbol VRM VRRM VRWM VR VR(RMS) IFM IO Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 4) Average Rectified Output Current (Note 4) Non-Repetitive Peak Forward Surge Current @ t = 1.0μs @ t = 1.0s IFSM A Electrical Characteristics, Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistor Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product* * Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl ΔR1 ΔR2/R1 fT Min 0.5 ⎯ ⎯ ⎯ ⎯ 80 -30 -20 ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 250 Max ⎯ 1.1 0.3 3.6 0.5 ⎯ +30 +20 ⎯ Unit V V V mA uA ⎯ % % MHz Test Condition VCC = 5V, IO = 100μA VO = 0.3V, IO = 5mA IO/Il = 50mA/0.25mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 10mA VCE = 10V, IE = 5mA, f = 100MHz Transistor - For Reference Only Electrical Characteristics, Switching Diode Characteristic Reverse Breakdown Voltage (Note 5) Forward Voltage @TA = 25°C unless otherwise specified Symbol V(BR)R Min 75 Max ⎯ Unit V VF 0.62 ⎯ ⎯ ⎯ 0.72 0.855 1.0 1.25 V μA μA μA nA pF ns Reverse Current (Note 5) IR ⎯ 2.5 50 30 25 Total Capacitance Reverse Recovery Time CT trr ⎯ ⎯ 4.0 4.0 Notes: Test Condition IR = 10μA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com 5. Short duration pulse test used to minimize self-heating effect. DRDNB21D Document number: DS30756 Rev. 6 - 2 2 of 7 www.diodes.com February 2011 © Diodes Incorporated DRDNB21D Device Characteristics PD, POWER DISSIPATION (mW) 250 Note 4 200 150 100 50 0 120 40 80 160 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve (Total Device) 0 Pre-Biased NPN Transistor Elements 1,000 1 0.1 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 75° C TA = -25°C TA = 25°C 0.01 0.001 0 10 40 20 30 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical VCE(SAT) vs. IC DRDNB21D Document number: DS30756 Rev. 6 - 2 50 3 of 7 www.diodes.com 100 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain 100 February 2011 © Diodes Incorporated DRDNB21D Pre-Biased NPN Transistor Elements - continued IC, COLLECTOR CURRENT (mA) 100 10 Vin, INPUT VOLTAGE (V) 10 1 0.1 1 0.01 0.001 0 1 8 9 10 6 7 3 4 5 Vin, INPUT VOLTAGE (V) Fig. 4 Typical Collector Current vs. Input Voltage 2 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Input Voltage vs. Collector Current 4 COB, CAPACITANCE (pF) IE = 0mA f = 1MHz 3 2 1 0 0 10 15 25 20 5 VR, REVERSE BIAS VOLTAGE (V) Fig. 6 Typical Output Capacitance DRDNB21D Document number: DS30756 Rev. 6 - 2 30 4 of 7 www.diodes.com February 2011 © Diodes Incorporated DRDNB21D 10,000 1,000 IR, INSTANTANEOUS REVERSE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) Switching Diode Elements 100 10 1 0.1 0 1,000 1.2 0.4 0.8 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 7 Typical Forward Characteristics 100 10 1 0.1 0 60 80 20 40 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Reverse Characteristics 100 3.0 CT, TOTAL CAPACITANCE (pF) f = 1MHz 2.5 2.0 1.5 1.0 0.5 0 0 10 20 40 30 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance vs. Reverse Voltage Typical Application Circuit L1 Relay1 D1 RL1 Typical Application Circuit DRDNB21D with two independent relays. DRDNB21D Document number: DS30756 Rev. 6 - 2 5 of 7 www.diodes.com February 2011 © Diodes Incorporated DRDNB21D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DRDNB21D Document number: DS30756 Rev. 6 - 2 6 of 7 www.diodes.com February 2011 © Diodes Incorporated DRDNB21D IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com DRDNB21D Document number: DS30756 Rev. 6 - 2 7 of 7 www.diodes.com February 2011 © Diodes Incorporated