DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected MOSFET Gate up to 2kV Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) • • • • D2 SOT563 B E Q1 Q2 S2 C Top View Internal Schematic Bottom View Top View ESD PROTECTED TO 2kV G2 Ordering Information (Note 3) Part Number DMB53D0UV-7 DMB53D0UV-13 Notes: Case SOT563 SOT563 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information MB1 YM Date Code Key Year Code 2008 V Month Code Jan 1 2009 W Feb 2 DMB53D0UV Document number: DS31651 Rev. 7 - 2 2010 X Mar 3 2011 Y Apr 4 May 5 MB1 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2012 Z Jun 6 1 of 7 www.diodes.com 2013 A Jul 7 2014 B Aug 8 2015 C Sep 9 2016 D Oct O 2017 E Nov N Dec D March 2012 © Diodes Incorporated DMB53D0UV Maximum Ratings – MOSFET, Q1 @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) Pulsed Drain Current (Note 4) Symbol VDSS VGSS ID IDM Continuous Value 50 ±12 160 560 Units V V mA mA Value 50 45 6.0 100 Unit V V V mA Value 250 500 -55 to +150 Unit mW °C/W °C Maximum Ratings - NPN Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Characteristics, Total Device @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics - MOSFET @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 50 ⎯ ⎯ ⎯ ⎯ 10 V μA IGSS ⎯ ⎯ 1.0 μA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) 0.7 ⎯ ⎯ 0.8 3.1 4 1.0 4 5 Gate-Body Leakage 5.0 V Ω Forward Transconductance gFS 180 ⎯ ⎯ mS DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss ⎯ ⎯ ⎯ 25 5 2.1 ⎯ ⎯ ⎯ pF pF pF Notes: Test Condition VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4V, ID = 100mA VGS = 2.5V, ID = 80mA VDS = 10V, ID = 100mA, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. DMB53D0UV Document number: DS31651 Rev. 7 - 2 2 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB53D0UV Electrical Characteristics - NPN Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain (Note 5) (Note 5) (Note 5) (Note 5) Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE Min 50 45 6 200 Typ — — — 290 Max — — — 450 100 300 Unit V V V — Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — — Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — 700 900 — mV Base-Emitter Voltage (Note 5) VBE 580 — 660 — 700 770 mV Collector-Cutoff Current (Note 5) — — — — 15 5.0 100 nA µA nA Collector-Emitter Cut-Off Current (Note 5) fT 100 — — MHz COBO — — 4.5 pF NF — — 10 dB ICBO ICBO ICES Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC = 10μA, IB = 0 IC = 10mA, IB = 0 IE = 1μA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = 150°C VCE = 45V VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, RS = 2.0kΩ, f = 1.0kHz, BW = 200Hz mV MOSFET 0.8 0.5 VGS = 10V 0.7 VDS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.4 VGS = 4.5V 0.6 0.5 VGS = 3.0V 0.4 VGS = 2.5V 0.3 0.2 TA = 85°C TA = 25°C TA = -55°C 0.3 T A = 150°C TA = 125°C 0.2 0.1 0.1 VGS = 1.5V VGS = 1.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMB53D0UV Document number: DS31651 Rev. 7 - 2 0 5 0 1 2 3 VGS, GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 3 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB53D0UV 10 VGS = 2.5V VGS = 4.0V 1 0.001 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 2.0 TA = 85°C TA = 25°C TA = -55°C 1 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 30 VGS = 4V ID = 100mA 1.6 1.4 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TA = 125°C 35 1.8 VGS = 2.5V ID = 80mA 1.2 1.0 0.8 25 Ciss 20 f = 1MHz VGS = 0V 15 10 5 0.6 0.4 -50 Coss Crss 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 1 1.1 1.0 0.9 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150°C ID = 250µA 0.8 0.7 0.1 TA = 150°C 0.01 TA = 125°C TA = 85°C 0.001 TA = 25°C T A = -55°C 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMB53D0UV Document number: DS31651 Rev. 7 - 2 0.0001 0.1 4 of 7 www.diodes.com 0.3 0.5 0.7 0.9 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current March 2012 © Diodes Incorporated DMB53D0UV PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 RθJA = 500°C/W 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 9 Derating Curve - Total Package Power Dissipation NPN Transistor 1,000 0.4 TA = 150° C IC IB = 20 100 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN TA = 25° C TA = -50° C 10 1 100 1,000 10 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical DC Current Gain vs. Collector Current 1 0.3 0.2 T A = 25°C TA = 150°C 0.1 TA = -50°C 0 0.1 1,000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical Collector-Emitter Saturation Voltage vs. Collector Current fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 VCE = 5V 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current DMB53D0UV Document number: DS31651 Rev. 7 - 2 100 5 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB53D0UV Package Outline Dimensions A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMB53D0UV Document number: DS31651 Rev. 7 - 2 6 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB53D0UV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com DMB53D0UV Document number: DS31651 Rev. 7 - 2 7 of 7 www.diodes.com March 2012 © Diodes Incorporated