Datasheet - Diodes Incorporated

A Product Line of
Diodes Incorporated
Green
ZXMHN6A07T8
ZXMHN6A0
7T8
ZXMHN6A0
7T8ZXMHN6
A07T8
60V N-CHANNEL MOSFET H-BRIDGE
Product Summary
BVDSS
RDS(ON)
Features
(Ω)
0.3 @ VGS = 10V
60V







ID (A)
1.6
Description and Applications
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low
voltage, power management applications.


Compact Package
Low On State Losses
Low Drive Requirements
Operates up to 60V
1 Amp Continuous Rating
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data


DC-AC Converters
Motor Control



Case: SM-8 (8 LEAD SOT223)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.117 grams (Approximate)
SM-8
Top View
Pin Out
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
ZXMHN6A07T8TA
ZXMHN6A07T8TC
Notes:
Reel Size (inches)
7
13
Tape Width (mm)
12
12
Quantity per Reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
ZXMH
N6A07
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
YWW
Marking Information
ZXMHN6A07 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01 to 53)
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A Product Line of
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ZXMHN6A07T8
Absolute Maximum Ratings
Characteristic
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
20
1.6
ID
1.3
TA = +25°C (Notes 6, 8)
Continuous Drain Current
VGS = 10V TA = +70°C (Notes 6, 8)
Value
60
ZXMHN6A0
7T8
Unit
ZXMHN6A0
V
V
7T8ZXMHN6
A07T8
A
1.4
TA = +25°C (Notes 5, 8)
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Notes 6, 8)
IDM
IS
9
1
A
A
Pulsed Source Current (Body Diode) (Note 7)
ISM
9
A
Thermal Characteristics
Total Power Dissipation
at TA = +25°C
Linear Derating Factor
above +25°C
Thermal Resistance Junction to Ambient
Characteristic
Any Single transistor " on" (Notes 5, 8)
Single transistor „on‟ (Notes 6, 8)
Two transistors „on‟ equally (Notes 5, 9)
Single transistor " on" (Notes 5, 8)
Single transistor „on‟ (Notes 6, 8)
Two transistors „on‟ equally (Notes 5, 9)
Single transistor " on" (Notes 5, 8)
Single transistor " on" (Notes 6, 8)
Two transistors „on‟ equally (Notes 5, 9)
Operating and Storage Temperature Range
Symbol
PTOT
PTOT
RθJA
TJ,TSTG
Value
1.1
1.4
1.6
8.8
11.2
13.2
114
89
76
-55 to +150
Unit
W
mW/C
C/W
C
Notes: 5. For a device mounted on 50mm x 50mm x 1.6mm FR-4 PCB with a high coverage of single sided 2oz weight copper in still air
conditions with the heat sink split into three equal areas, one for each drain connection.
6. For a device surface mounted on a FR-4 PCB at t < = 10 sec.
7. Repetitive rating on 50mm x 50mm x 1.6mm FR-4 PCB, duty cycle 2%, pulse width 300µs in still air conditions with the heat sink split
into three equal areas, one for each drain connection.
8. For device with one active die.
9. For any two die not sharing the same drain connection.
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
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ZXMHN6A07T8
ZXMHN6A0
7T8
ZXMHN6A0
7T8ZXMHN6
A07T8
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
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ZXMHN6A07T8
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
ZXMHN6A0
7T8
Test Condition
ZXMHN6A0
= 0V, I =250µA
7T8ZXMHN6
= 60V, V = 0V
= ±20V,
V = 0V
A07T8
Characteristic
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
VGS(TH)
Static Drain-Source On-State Resistance (Note 10)
RDS(ON)
gfs
60


1.0









2.3

1.0
100
3.0
0.3
0.45

V
µA
nA
V
Ω
Ω
S
VGS
D
VDS
GS
VGS
DS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.8A
VGS = 4.5V, ID = 1.3A
VDS =15V,ID =1.8A
Ciss
Coss
Crss



166
20
9



pF
pF
pF
VDS = 40V, VGS = 0V,
f = 1MHz
tD(ON)
tR
tD(OFF)
tF
Qg
Qgs
Qgd







1.8
1.4
4.9
2.0
3.2
0.7
0.8







ns
ns
ns
ns
nC
nC
nC
Diode Forward Voltage (Note 10)
VSD


0.95
V
Reverse Recovery Time (Note 12)
Reverse Recovery Charge (Note 12)
tRR
QRR


21
21


ns
nC
Forward Transconductance (Notes 10,12)
DYNAMIC (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (Notes 11, 12)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Gate Charge
Gate-Source Charge
Gate Drain Charge
Source-Drain Diode
VDD = 30V, ID=1.8A
RG ≅ 6.0Ω, VGS= 10V
VDS= 30V, VGS= 10V
ID= 1.8A
TJ=+25°C, IS= 0.45A,
VGS=0V
TJ=+25°C, IS= 1.0A,
di/dt=100A/µs
Notes: 10. Measured under pulsed conditions. Pulse width <= 300µs; duty cycle <= 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
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A Product Line of
Diodes Incorporated
ZXMHN6A07T8
ZXMHN6A0
7T8
ZXMHN6A0
7T8ZXMHN6
A07T8
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
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A Product Line of
Diodes Incorporated
ZXMHN6A07T8
ZXMHN6A0
7T8
ZXMHN6A0
7T8ZXMHN6
A07T8
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
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A Product Line of
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ZXMHN6A07T8
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A1
A
Seating Plane
D
e1
L
ø
E E1
ø1
c
e
b
ZXMHN6A0
7T8
ZXMHN6A0
7T8ZXMHN6
A07T8
SM-8
Dim Min Max
Typ
A
--
1.70
1.60
A1
0.02 0.10
0.04
b
0.70 0.90
0.80
c
0.24 0.32
0.28
D
6.30 6.70
6.60
e
1.53 REF
e1
4.59 REF
E
6.70 7.30
7.00
E1
3.30 3.70
3.50
L
0.75 1.00
0.90
Ø
--45°
Ø1
-15°
-Ø2
--10°
All Dimensions in mm
ø2
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Y1
X
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
Dimensions Value (in mm)
C
1.52
C1
4.60
X
0.95
Y
2.80
Y1
6.80
C1
C
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A Product Line of
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ZXMHN6A07T8
ZXMHN6A0
7T8
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR AZXMHN6A0
PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
7T8ZXMHN6
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
A07T8
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability
arising out of the
IMPORTANT NOTICE
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
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