DMP32D4SFB 30V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE NEW PRODUCT INFORMATION Product Summary V(BR)DSS RDS(on) Max -30V 2.4 @ VGS = -10V 4 @ VGS = -4.5V 16 @ VGS = -2.5V Features ID Max @ TA = +25C -400mA -300mA -50mA Low On-Resistance Ultra-Small Surfaced Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications Load Switch Portable Applications Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) Drain X1-DFN1006-3 Gate S D G ESD PROTECTED Bottom View Top View Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Product DMP32D4SFB-7B Notes: Marking XP Reel size (inches) 7 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information XP XP = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMP32D4SFB Document number: DS36161 Rev. 2 - 2 1 of 6 www.diodes.com March 2013 © Diodes Incorporated DMP32D4SFB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE NEW PRODUCT INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Continuous Drain Current (Note 6) VGS = -10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -30 ±20 -400 -300 ID mA -500 -400 -1 -800 ID Pulsed Drain Current (Note 5) Maximum Body Diode continuous Current Unit V V IDM IS mA A mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Value 0.5 1.2 273 105 -55 to 150 PD RJA Operating and Storage Temperature Range TJ, TSTG Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1 ±10 V µA µA VGS = 0V, ID = -1mA VDS = -30V, VGS = 0V VGS = ±16V, VDS = 0V VGS(th) -1.3 - V Static Drain-Source On-Resistance RDS (ON) - - |Yfs| VSD - 6 0.8 -2.3 2.4 4 16 1.2 VDS = VGS, ID = -250μA VGS = -10V, ID = -200mA VGS = -4.5V, ID = -200mA VGS = -2.5V, ID = -10mA VDS = -10V, ID = -400mA VGS = 0V, IS = -300mA Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 51 11 9 0.6 1.3 0.2 0.2 3.6 8.5 31.3 20.2 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω S V pF pF pF nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VGS = -4.5V VGS = -10V VDS = -10V, ID = -200mA VDS = -15V, ID = -500mA VGS = -10V, RG = 1Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP32D4SFB Document number: DS36161 Rev. 2 - 2 2 of 6 www.diodes.com March 2013 © Diodes Incorporated DMP32D4SFB 1.0 1.0 VGS = -10V 0.8 VGS = -4.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.5V VGS = -3.0V 0.6 0.4 0.2 0 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.9 0.8 0.7 0.6 VGS = -4.5V 0.4 VGS = -10V 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0 1.4 0.4 T A = 150 C T A = 125 C TA = 85C T A = 25C TA = -55C 1 2 3 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 1.5 ID = -0.2A 1.2 0.9 0.6 0.3 0 0 2 4 6 8 10 12 14 16 18 20 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.6 1.2 VGS = -10V ID = -300mA RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = -4.5V 1.0 TA = 150C 0.8 T A = 125C TA = 85C 0.6 T A = 25C 0.4 TA = -55C 0.2 0 0.6 0 5 1.0 0.5 VDS = -5.0V 0.2 VGS = -2.5V VGS = -2.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE NEW PRODUCT INFORMATION 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP32D4SFB Document number: DS36161 Rev. 2 - 2 3 of 6 www.diodes.com 1.4 1.2 VGS = -4.5V ID = -200mA 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature March 2013 © Diodes Incorporated 2.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 1.2 0.9 VGS = -4.5V ID = -200mA 0.6 VGS = -10V ID = -300mA 0.3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 2.0 1.8 1.4 1.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) -ID = 250µA 100 0.8 0.6 T A= 150 C 0.4 TA= 125C T A= 85C TA= 25C 0.2 TA= -55 C 0 -ID = 1mA 1.6 1.0 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current Ciss Coss 10 Crss f = 1MHz 1 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 10 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE NEW PRODUCT INFORMATION DMP32D4SFB 8 VDS = -10V ID = -200mA 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP32D4SFB Document number: DS36161 Rev. 2 - 2 1.4 4 of 6 www.diodes.com March 2013 © Diodes Incorporated DMP32D4SFB Package Outline Dimensions ADVANCE NEW PRODUCT INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 All Dimensions in mm A A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMP32D4SFB Document number: DS36161 Rev. 2 - 2 5 of 6 www.diodes.com March 2013 © Diodes Incorporated DMP32D4SFB IMPORTANT NOTICE ADVANCE NEW PRODUCT INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DMP32D4SFB Document number: DS36161 Rev. 2 - 2 6 of 6 www.diodes.com March 2013 © Diodes Incorporated