DMP1245UFCL 12V P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits RDS(on) max ID max 29mΩ @VGS = -4.5V -6.6 A 45mΩ @VGS = -2.5V -5.3 A 60mΩ @VGS = -1.8V -4.6 A 100mΩ @VGS = -1.5V -3.5 A ADVANCE INFORMATION V(BR)DSS -12V Typical off board profile of 0.5mm ideally suited for thin applications Low RDS(ON) minimizes conduction losses PCB footprint of 2.56mm2 3kV ESD Protected Gate – protection against human borne ESD Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data This device provides high performance, low RDS(ON) P Channel MOSFETs in the thermally and space efficient X1-DFN1616-6 package. The low RDS(ON) of this MOSFET ensures conduction losses are kept making it ideal for use as a: Battery Disconnect Switch Load Switch for Power Management Functions X1-DFN1616-6 Case: X1-DFN1616-6 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Lead Free Plating (NiPdAu Finish over Copper Leadframe) Terminals: Solderable per MIL-STD-202, Method 208 e4 Weight: 0.04 grams (Approximate) D Pin 1 G Gate Protection Diode Top View Bottom View S Top View Pin-Out Device symbol Ordering Information (Note 4) Product DMP1245UFCL-7 Notes: Marking P5 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information X1-DFN1616-6 P5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) P5 YM Date Code Key Year Code Month Code …. …. 2011 Y Jan 1 Feb 2 DMP1245UFCL Document number: DS35505 Rev. 2 - 2 2014 B Mar 3 2015 C Apr 4 May 5 2016 D Jun 6 1 of 7 www.diodes.com 2017 E Jul 7 2018 F Aug 8 2019 G Sep 9 2020 H Oct O 2021 I Nov N Dec D March 2015 © Diodes Incorporated DMP1245UFCL Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) Symbol VDSS VGSS @TA = +25°C @TA = +70°C TP = 10µs Units V V Value 613 1.7 204 74 -55 to +150 Units mW W ID IDM A A Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Symbol (Note 5) (Note 6) (Note 5) (Note 6) PD RJA Operating and Storage Temperature Range Notes: TJ, TSTG °C/W °C 5. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state condition. 6. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady state condition. 100 100 RDS(ON) Limited Single Pulse RJA=205°C/W RJA(t)=RJA*r(t) TJ-TA=P*R JA (t) 90 80 ID(A) @ PW=10µs I D (A ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) 70 60 50 40 30 20 10 ID (A ) )@ P W= 1m @ P s W= 10 ID(A) @ DC 1 0µ s ID(A) @PW=10s ID(A) @PW=1s ID(A) @PW=100ms 0.1 TJ(MAX) = 150C ID(A) @PW=10ms TA = 25 C Single Pulse 10 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION Pulsed Drain Current Value -12 ±8 -6.6 -5.25 -16.67 0.1 0.01 RJA (t)=r(t) * RJA RJA = 205°C/W Duty Cycle, D=t1/ t2 0.001 0.00001 DMP1245UFCL Document number: DS35505 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 03 Transient Thermal Resistance 2 of 7 www.diodes.com 10 100 1000 March 2015 © Diodes Incorporated DMP1245UFCL ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 -1 10 V µA µA VGS = 0V, ID = -250µA VDS = -12.0V, VGS = 0V VGS = 8.0V, VDS = 0V VGS(th) RDS (ON) -0.6 25 31 40 60 3 - -0.95 29 45 60 100 -1.0 V Static Drain-Source On-Resistance -0.3 0.4 - VDS = VGS, ID = -250µA VGS = -4.5V, ID = - 4A VGS = -2.5V, ID = - 3.5A VGS = -1.8V, ID = - 1A VGS = -1.5 V, ID = - 0.5A VDS = -5V, ID = -2A VGS = 0V, ID = -2A - 1357.4 499 273.6 14.26 16.1 26.1 1.71 20.48 15.2 33.11 219.4 217.64 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance |Yfs| VSD Ciss Coss Crss Rg Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Qg Qgs Qgd tD(on) tr tD(off) tf mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V ID = -1A, VDS = -10V VGS = -8V VGS = -2.5V, VDS = -10V ID = -180mA, RG = 2.0Ω, 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1245UFCL Document number: DS35505 Rev. 2 - 2 3 of 7 www.diodes.com March 2015 © Diodes Incorporated DMP1245UFCL 20 20 VGS = 2.0V VGS = 1.8V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16 VGS = 2.5V VGS = 1.5V 12 VGS = 4.5V 8 VGS = 1.2V VGS = 8.0V 12 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristics 0 5 R DS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.06 VGS = -1.5V 0.05 VGS = -1.8V 0.04 VGS = -2.5V 0.03 VGS = -4.5V VGS = -3.5V 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 1.7 1.5 VGS = -2.5V ID = -5A 1.3 1.1 VGS = -4.5V ID = -10A 0.9 0.7 0.04 TA = 150°C TA = 125°C TA = 85°C TA = 25°C 0.02 T A = -55°C 0 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 VGS = -2.5V ID = -5A 0.04 0.03 VGS = -4.5V ID = -10A 0.02 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature Document number: DS35505 Rev. 2 - 2 3.0 VGS = 4.5V 0.5 -50 DMP1245UFCL 0.5 1.0 1.5 2.0 2.5 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic 0.06 20 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 4 4 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION 16 4 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) 150 Fig. 9 On-Resistance Variation with Temperature March 2015 © Diodes Incorporated DMP1245UFCL 1.2 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 1.0 12 0.8 0.6 ID = -1mA 0.4 ID = -250µA 0.2 TA = 25°C 8 4 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 100,000 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 2,500 CT, JUNCTION CAPACITANCE (pF) TA = 150°C IDSS, LEAKAGE CURRENT (nA) T A = 125°C 10,000 TA = 85°C 1,000 100 TA = 25°C 10 2,000 CISS 1,500 1,000 COSS 500 CRSS 0 1 0 2 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Drain-Source Leakage Current vs. Voltage 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Junction Capacitance 20 8 V GS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 1.4 6 VDS = -10V ID = -1A 4 2 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics DMP1245UFCL Document number: DS35505 Rev. 2 - 2 30 5 of 7 www.diodes.com March 2015 © Diodes Incorporated DMP1245UFCL Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ADVANCE INFORMATION X1-DFN1616-6 Type E Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 — — 0.13 b 0.20 0.30 0.25 b1 0.10 0.30 0.20 D 1.55 1.65 1.60 D2 0.57 0.77 0.67 E 1.55 1.65 1.60 E2 1.30 1.50 1.40 e — — 0.50 L 0.25 0.35 0.30 L1 0.52 0.72 0.62 Z — — 0.175 All Dimensions in mm A3 A1 A D D2 b1 E E2 L1 L(2X) e Z(4X) b(6X) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X3 Y (2x) C X X1 X2 X3 Y Y1 Y2 Y1 Y2 X2 X1 X (6x) DMP1245UFCL Document number: DS35505 Rev. 2 - 2 Dimensions Value (in mm) 0.500 0.300 0.200 0.720 0.400 0.475 0.620 1.900 C 6 of 7 www.diodes.com March 2015 © Diodes Incorporated DMP1245UFCL IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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