DMP1245UFCL-7 - Diodes Incorporated

DMP1245UFCL
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
Features and Benefits
RDS(on) max
ID max

29mΩ @VGS = -4.5V
-6.6 A

45mΩ @VGS = -2.5V
-5.3 A
60mΩ @VGS = -1.8V
-4.6 A


100mΩ @VGS = -1.5V
-3.5 A
ADVANCE INFORMATION
V(BR)DSS
-12V



Typical off board profile of 0.5mm ideally suited for thin
applications
Low RDS(ON) minimizes conduction losses
PCB footprint of 2.56mm2
3kV ESD Protected Gate – protection against human borne
ESD
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
This device provides high performance, low RDS(ON) P Channel


MOSFETs in the thermally and space efficient X1-DFN1616-6
package. The low RDS(ON) of this MOSFET ensures conduction




losses are kept making it ideal for use as a:


Battery Disconnect Switch
Load Switch for Power Management Functions
X1-DFN1616-6
Case: X1-DFN1616-6
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (NiPdAu Finish over Copper Leadframe)
Terminals: Solderable per MIL-STD-202, Method 208 e4
Weight: 0.04 grams (Approximate)
D
Pin 1
G
Gate Protection
Diode
Top View
Bottom View
S
Top View
Pin-Out
Device symbol
Ordering Information (Note 4)
Product
DMP1245UFCL-7
Notes:
Marking
P5
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
X1-DFN1616-6
P5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
P5
YM
Date Code Key
Year
Code
Month
Code
….
….
2011
Y
Jan
1
Feb
2
DMP1245UFCL
Document number: DS35505 Rev. 2 - 2
2014
B
Mar
3
2015
C
Apr
4
May
5
2016
D
Jun
6
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2017
E
Jul
7
2018
F
Aug
8
2019
G
Sep
9
2020
H
Oct
O
2021
I
Nov
N
Dec
D
March 2015
© Diodes Incorporated
DMP1245UFCL
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Symbol
VDSS
VGSS
@TA = +25°C
@TA = +70°C
TP = 10µs
Units
V
V
Value
613
1.7
204
74
-55 to +150
Units
mW
W
ID
IDM
A
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
PD
RJA
Operating and Storage Temperature Range
Notes:
TJ, TSTG
°C/W
°C
5. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state
condition.
6. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device
is measured when operating in a steady state condition.
100
100
RDS(ON)
Limited
Single Pulse
RJA=205°C/W
RJA(t)=RJA*r(t)
TJ-TA=P*R JA (t)
90
80
ID(A) @
PW=10µs
I
D (A
ID, DRAIN CURRENT (A)
P(pk), PEAK TRANSIENT POWER (W)
70
60
50
40
30
20
10
ID
(A
)
)@
P
W=
1m
@
P
s
W=
10
ID(A) @ DC
1
0µ
s
ID(A) @PW=10s
ID(A) @PW=1s
ID(A) @PW=100ms
0.1
TJ(MAX) = 150C
ID(A) @PW=10ms
TA = 25 C
Single Pulse
10
0
0.0001 0.001 0.01
0.1
1
10
100 1000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
Pulsed Drain Current
Value
-12
±8
-6.6
-5.25
-16.67
0.1
0.01
RJA (t)=r(t) * RJA
RJA = 205°C/W
Duty Cycle, D=t1/ t2
0.001
0.00001
DMP1245UFCL
Document number: DS35505 Rev. 2 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 03 Transient Thermal Resistance
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10
100
1000
March 2015
© Diodes Incorporated
DMP1245UFCL
ADVANCE INFORMATION
Electrical Characteristics
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-12






-1
10
V
µA
µA
VGS = 0V, ID = -250µA
VDS = -12.0V, VGS = 0V
VGS = 8.0V, VDS = 0V
VGS(th)
RDS (ON)
-0.6
25
31
40
60
3
-
-0.95
29
45
60
100
-1.0
V
Static Drain-Source On-Resistance
-0.3




0.4
-
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = - 4A
VGS = -2.5V, ID = - 3.5A
VGS = -1.8V, ID = - 1A
VGS = -1.5 V, ID = - 0.5A
VDS = -5V, ID = -2A
VGS = 0V, ID = -2A
-
1357.4
499
273.6
14.26
16.1
26.1
1.71
20.48
15.2
33.11
219.4
217.64
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V
ID = -1A,
VDS = -10V
VGS = -8V
VGS = -2.5V, VDS = -10V
ID = -180mA, RG = 2.0Ω,
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP1245UFCL
Document number: DS35505 Rev. 2 - 2
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DMP1245UFCL
20
20
VGS = 2.0V
VGS = 1.8V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
16
VGS = 2.5V
VGS = 1.5V
12
VGS = 4.5V
8
VGS = 1.2V
VGS = 8.0V
12
0
0
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristics
0
5
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.06
VGS = -1.5V
0.05
VGS = -1.8V
0.04
VGS = -2.5V
0.03
VGS = -4.5V
VGS = -3.5V
0.02
0.01
0
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
VGS = -2.5V
ID = -5A
1.3
1.1
VGS = -4.5V
ID = -10A
0.9
0.7
0.04
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.02
T A = -55°C
0
0
4
8
12
16
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
20
0.06
0.05
VGS = -2.5V
ID = -5A
0.04
0.03
VGS = -4.5V
ID = -10A
0.02
0.01
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
Document number: DS35505 Rev. 2 - 2
3.0
VGS = 4.5V
0.5
-50
DMP1245UFCL
0.5
1.0
1.5
2.0
2.5
-V GS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
0.06
20
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
8
4
4
RDSON, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
ADVANCE INFORMATION
16
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0
-50
-25
0
25
50
75 100 125
TA, AMBIENT TEMPERATURE (°C)
150
Fig. 9 On-Resistance Variation with Temperature
March 2015
© Diodes Incorporated
DMP1245UFCL
1.2
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
20
1.0
12
0.8
0.6
ID = -1mA
0.4
ID = -250µA
0.2
TA = 25°C
8
4
0
0.4
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
100,000
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
2,500
CT, JUNCTION CAPACITANCE (pF)
TA = 150°C
IDSS, LEAKAGE CURRENT (nA)
T A = 125°C
10,000
TA = 85°C
1,000
100
TA = 25°C
10
2,000
CISS
1,500
1,000
COSS
500
CRSS
0
1
0
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Drain-Source Leakage Current vs. Voltage
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
20
8
V GS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
1.4
6
VDS = -10V
ID = -1A
4
2
0
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
DMP1245UFCL
Document number: DS35505 Rev. 2 - 2
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DMP1245UFCL
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATION
X1-DFN1616-6
Type E
Dim Min Max Typ
A
0.47 0.53 0.50
A1
0
0.05 0.02
A3
—
—
0.13
b
0.20 0.30 0.25
b1
0.10 0.30 0.20
D
1.55 1.65 1.60
D2
0.57 0.77 0.67
E
1.55 1.65 1.60
E2
1.30 1.50 1.40
e
—
—
0.50
L
0.25 0.35 0.30
L1
0.52 0.72 0.62
Z
—
—
0.175
All Dimensions in mm
A3
A1
A
D
D2
b1
E
E2
L1
L(2X)
e
Z(4X)
b(6X)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X3
Y (2x)
C
X
X1
X2
X3
Y
Y1
Y2
Y1
Y2
X2
X1
X (6x)
DMP1245UFCL
Document number: DS35505 Rev. 2 - 2
Dimensions
Value
(in mm)
0.500
0.300
0.200
0.720
0.400
0.475
0.620
1.900
C
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DMP1245UFCL
IMPORTANT NOTICE
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DMP1245UFCL
Document number: DS35505 Rev. 2 - 2
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