Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR General Description Features The AP1662 is an active power factor control IC which is designed mainly for use as a pre-converter in electronic ballast, AC-DC adapter and off-line SMPS applications. . The IC includes an internal start-up timer for stand-alone applications, a one-quadrant multiplier to realize near unity power factor and a zero current detector to ensure DCM boundary conduction operation. • • • The totem pole output stage is capable of driving power MOSFET with 600mA source current and 800mA sink current. • • • • • • • Designed with advanced BiCMOS process, the AP1662 features low start-up current, low operation current and low power dissipation. The AP1662 also has rich protection features including over-voltage protection, input under-voltage lockout with hysteresis and multiplier output clamp to limit maximum peak current. • AP1662 Comply with IEC61000-3-2 Standard Proprietary Design for Minimum THD Zero Current Detection Control for DCM Boundary Conduction Mode Adjustable Output Voltage with Precise Over-voltage Protection Low Start-up Current with 40µA Typical Value Low Quiescent Current with 2.5mA Typical Value 1% Precision Internal Reference Voltage @ TJ=25°C Internal Start-up Timer Disable Function for Reduced Current Consumption Totem Pole Output with 600mA Source and 800mA Sink Current Capability Under-voltage Lockout with 2.5V Hysteresis Applications • • • • The AP1662 meets IEC61000-3-2 standard even at one-quadrant load and THD lower than 10% at high-end line voltage and full load. Electronic Ballast AC-DC Adapter Off-line SMPS Single Stage PFC LED Driver The IC is available in SOIC-8 and DIP-8 packages. SOIC-8 DIP-8 Figure 1. Package Types of AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Pin Configuration M Package （SOIC-8） INV 1 8 VCC COMP 2 7 GD MULT 3 6 GND CS 4 5 ZCD P Package （DIP-8） INV 1 8 VCC COMP 2 7 GD MULT 3 6 GND CS 4 5 ZCD Figure 2. Pin Configuration of AP1662 (Top View) Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Pin Description Pin Number Pin Name Function 1 INV 2 COMP Output of the error amplifier 3 MULT Input of the multiplier 4 CS 5 ZCD 6 GND 7 GD 8 VCC Inverting input of the error amplifier Input of the current control loop comparator Zero current detection input. If it is connected to GND, the device is disabled Ground. Current return for gate driver and control circuits of the IC Gate driver output Supply voltage of gate driver and control circuits of the IC Functional Block Diagram Figure 3. Functional Block Diagram of AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Ordering Information AP1662 Circuit Type E1: Lead Free G1: Green Package M: SOIC-8 P: DIP-8 Blank: Tube TR: Tape & Reel Package Temperature Range SOIC-8 -40 to 105°C DIP-8 - -40 to 105°C Part Number Lead Free Green Marking ID Lead Free Green Packing Type AP1662M-E1 AP1662M-G1 1662M-E1 1662M-G1 Tube AP1662MTR-E1 AP1662MTR-G1 1662M-E1 1662M-G1 Tape & Reel AP1662P-E1 AP1662P-G1 AP1662P-E1 AP1662P-G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages. Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Operating Supply Current Input/Output of Error Amplifier, Input of Multiplier Current Sense Input Symbol Value Unit VCC Self-limited V ICC VINV, VCOMP, VMULT VCS 30 mA -0.3 to 7 V -0.3 to 7 V Zero Current Detector Input IZCD Power Dissipation and Thermal characteristics @ TA=50°C PTOT Thermal Resistance (Junction to Ambient) RθJA Source -50 Sink 10 DIP-8 1 SOIC-8 0.65 DIP-8 100 SOIC-8 150 mA W ºC/W Operating Junction Temperature TJ -40 to 150 ºC Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) ESD (Human Body Model) TSTG -65 to 150 ºC TLEAD 260 ºC VESD(HBM) 3000 V ESD (Machine Model) VESD(MM) 200 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Electrical Characteristics VCC =12V, TJ =-25°C to 125°C, CO=1nF, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Under Voltage Lockout Section Turn-on Threshold VCC-ON VCC Rising 11 12 13 V Turn-off Threshold VCC-OFF VCC Falling 8.7 9.5 10.3 V Hysteresis VCC-HYS 2.2 2.5 2.8 V 22 V VCC Operating Range VCC After turn-on Zener Voltage VZ ICC=20mA 10.3 22 24 V Total Supply Current Section Start-up Current ISTART-UP VCC=11V before turn-on 40 70 µA Frequency=70kHz 3.5 5 Operating Supply Current ICC In OVP condition VINV =2.7V 1.4 2.2 Quiescent Current IQ After turn on 2.5 3.75 mA Quiescent Current IQ 2.2 mA µA VZCD≤150mV, VCC>VCC-OFF VZCD≤150mV, VCC<VCC-OFF 20 50 90 2.465 2.5 2.535 mA Error Amplifier Section Voltage Feedback Input Threshold VINV Line Regulation TJ =25ºC 10.3V<VCC<20V VCC=10.3V to 20V Input Bias Current IINV VINV=0 to 3V Voltage Gain GV Open Loop Gain Bandwidth GB Output Voltage Output Current Jul. 2012 Upper Clamp Voltage Lower Clamp Voltage Source Current Sink Current 2.44 60 2.56 2 5 mV -0.1 -1 µA 80 dB 1 MHz VCOMP-H ISOURCE=0.5mA 5.15 5.55 5.85 VCOMP-L ISINK=0.5mA 2.1 2.25 2.4 ICOMP-H VCOMP=4V, VINV =2.4V -2 -4 -8 ICOMP-L VCOMP=4V, VINV=2.6V 2.5 4.5 Rev. 1. 3 V V mA BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Electrical Characteristics (Continued) VCC =12V, TJ =-25°C to 125°C, CO=1nF, unless otherwise specified. Parameter Symbol Test Conditions Min Typ 0 to 3 0 to 3.5 VMULT: 0 to 0.5V, VCOMP=Upper Clamp Voltage 1.65 1.9 VMULT=1V, VCOMP=4V 0.6 0.75 Max Unit Multiplier Section Linear Input Voltage Range Output Maximum Slope VMULT △ VCS/ △VMULT Gain k V 0.9 1/V -1 µA Current Sense Section Input Bias Current Current Sense Offset Voltage Current Sense Reference Clamp Delay to Output ICS VCS-OFFSET VCS-CLAMP VCS=0V VMULT=0V VMULT=2.5V VCOMP = Upper Clamp Voltage, VMULT = 2.5V 30 5 1.6 td(H-L) mV 1.7 1.8 V 200 350 ns Zero Current Detection Section Arming Voltage (positive-going edge) Triggering Voltage (negative-going edge) VZCDA (Note 2) 2.1 V VZCDT (Note 2) 1.6 V Upper Clamp Voltage VZCD-H Lower Clamp Voltage VZCD-L Source Current Capability Sink Current Capability IZCD=20µA 4.5 5.1 5.9 IZCD=3mA 4.7 5.2 6.1 IZCD= -3mA 0.3 0.65 1 V -10 mA IZCD-SR -2.5 IZCD-SN 3 Sink Bias Current IZCD-B Disable Threshold VZCD-DIS Disable Hysteresis VZCD-HYS Restart Current After Disable IZCD-RES 1V ≤ VZCD ≤ 4.5 V VZCD<VDIS, VCC>VCC-OFF mA µA 2 150 -80 V 200 250 mV 100 mV -120 µA Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Electrical Characteristics (Continued) VCC =12V, TJ =-25°C to 125°C, CO=1nF, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit IGD-SOURCE=200mA 2.5 3 IGD-SOURCE=20mA 2 2.8 IGD-SINK=200mA 0.9 1.9 tR 40 80 ns tF 30 70 ns 11 13 V 1.1 V Drive Output Section VOH Dropout Voltage VOL Output Time Voltage Rise Output Voltage Fall Time Output Clamp Voltage UVLO Saturation VO-CLAMP VOS IGD-SOURCE=5mA VCC=20V VCC=0 to VCC-ON, ISINK=10mA 9 V Output Over Voltage Section OVP Triggering Current Static OVP Threshold IOVP 35 40 45 µA VOVP_TH 2.1 2.25 2.4 V tSTART 75 130 300 µs Starter Start Timer Period Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Typical Performance Characteristics 3.0 12.5 12.0 2.5 VCC-ON Voltage (V) Supply Current (mA) 11.5 2.0 1.5 CO=1nF f=70kHz o TJ=25 C 1.0 11.0 10.5 10.0 0.5 9.5 0.0 0 5 10 15 20 9.0 -50 25 Supply Voltage (V) VCC-OFF 0 50 100 150 o Junction Temperature ( C) Figure 4. Supply Current vs. Supply Voltage Figure 5. Start-up & UVLO vs. TJ 28 8 4 Quiescent 27 26 1 0.5 0.25 Disabled or during OVP VCC=12V CO=1nF f=70kHz VCC-CLAMP (V) ICC (mA) 2 0.125 Before start-up 0.0625 25 24 23 0.03125 -50 0 50 100 22 -50 150 o 50 100 150 o Figure 6. ICC Consumption vs. TJ Jul. 2012 0 Junction Temperature ( C) Junction Temperature ( C) Figure 7. VCC Zener Voltage vs. TJ Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Typical Performance Characteristics (Continued) 2.60 43.0 42.5 VCC=12V VCC=12V 2.55 42.0 IOVP (µA) VREF (V) 41.5 2.50 2.45 41.0 40.5 40.0 39.5 2.40 -50 0 50 100 39.0 -50 150 0 O 50 100 150 o Junction Temperature ( C) Junction Temperature ( C) Figure 8. Feedback Reference Voltage vs. TJ Figure 9. OVP Current vs. TJ 500 6.0 5.5 VCC=12V 400 Upper Clamp 5.0 VCOMP (V) td(H-L) (ns) VCC=12V 4.5 300 200 4.0 3.5 3.0 100 Lower Clamp 2.5 0 -50 0 50 100 2.0 -50 150 o 50 100 150 o Junction Temperature ( C) Junction Temperature ( C) Figure 10. Delay-to-Output vs. TJ Jul. 2012 0 Figure 11. E/A Output Clamp Levels vs. TJ Rev. 1. 3 BCD Semiconductor Manufacturing Limited 10 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 2.0 1.0 1.8 0.8 Multiplier Gain VCS-CLAMP (V) Typical Performance Characteristics (Continued) 1.6 1.4 VCC=12V VCOMP=Upper Clamp 1.2 1.0 -50 0 50 100 VCC=12V VCOMP=4V VMULT=1V 0.6 0.4 0.2 0.0 -50 150 0 o 50 100 150 o Junction Temperature ( C) Junction Temperature ( C) Figure 12. VCS-CLAMP vs. TJ Figure 13. Multiplier Gain vs. TJ 0 7 VCC=12V VZCD=Lower Clamp -2 6 Upper Clamp VZCD (V) IZCD (mA) 5 -4 VCC=12V IZCD= + 2.5mA 4 3 2 -6 Lower Clamp 1 -8 -50 0 50 100 0 -50 150 o 50 100 150 o Junction Temperature ( C) Junction Temperature ( C) Figure 14. ZCD Source Capability vs. TJ Jul. 2012 0 Figure 15. ZCD Clamp Levels vs. TJ Rev. 1. 3 BCD Semiconductor Manufacturing Limited 11 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Typical Performance Characteristics (Continued) 200 1.8 VCC=12V VCOMP=MAX VCOMP=5.0 VCOMP=4.5 1.6 VCOMP=3.5 VCOMP=4.0 180 1.4 170 1.2 VCS (V) tSTART (µS) 190 160 VCOMP=3.2 1.0 0.8 VCOMP=3.0 150 0.6 140 0.4 VCOMP=2.8 130 0.2 120 -50 0.0 0.0 0 50 100 150 VCOMP=2.6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VMULT (V) o Junction Temperature ( C) Figure 16. Start-up Timer vs. TJ Figure 17. Multiplier Characteristics VGD (V) 6 VCC-2.0 5 VGD (V) 4 o TJ=25 C VCC=11V SOURCE VCC-2.5 o TJ=25 C VCC=11V SINK VCC-3.0 3 VCC-3.5 2 VCC-4.0 1 0 0 200 400 600 800 1000 0 IGD (mA) 200 300 400 500 600 700 IGD (mA) Figure 18. Gate-driver Output Low Saturation Jul. 2012 100 Figure 19. Gate-driver Output High Saturation Rev. 1. 3 BCD Semiconductor Manufacturing Limited 12 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Typical Performance Characteristics (Continued) 15 1.1 VCC=0V 1.0 14 VCC=20V VGD_OFF (V) VGD_CLAMP (V) 0.9 13 12 0.8 0.7 11 0.6 10 -50 0 50 100 0.5 -50 150 50 100 150 Junction Temperature ( C) Junction Temperature ( C) Figure 20. Gate-driver Clamp vs. TJ Jul. 2012 0 o o Figure 21. UVLO Saturation vs. TJ Rev. 1. 3 BCD Semiconductor Manufacturing Limited 13 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR disabled and the drive signal is stopped. If the output over voltage lasts so long that the output of error amplifier goes below 2.25V, static OVP will take place. Also the IC will be disabled until the output of error amplifier goes back to its linear region. R1 and R2 (see Fig. 22) will be selected as below: Functional Block Description AP1662 is a high performance power factor correction controller which operates in DCM boundary conduction mode. The PFC converter's switch will be turned on when the inductor current reduces to zero and turned off when the sensed inductor current reaches the required reference which is decided by the output of multiplier. Error Amplifier Protection and AP1662 R1 V = O −1 R 2 2.5V Over-Voltage R1 = The error amplifier regulates the PFC output voltage. The internal reference on the non-inverting input of the error amplifier is 2.5V. The error amplifier's inverting input (INV) is connected to an external resistor divider which senses the output voltage. The output of error amplifier is one of the two inputs of multiplier. A compensation loop is connected outside between INV and the error amplifier output. Normally, the compensation loop bandwidth is set very low to realize high power factor for PFC converter. ∆VOVP 40µA Multiplier The multiplier has two inputs. One (Pin 3) is the divided AC sinusoidal voltage which makes the current sense comparator threshold voltage vary from zero to peak value. The other input is the output of error amplifier (Pin 2). In this way, the input average current wave will be sinusoidal as well as reflects the load status. Accordingly a high power factor and good THD are achieved. The multiplier transfer character is designed to be linear over a wide dynamic range, namely, 0V to 3V for Pin 3 and 2V to 5.8V for Pin 2. The relationship between the multiplier output and inputs is described as below equation： VCS = k × (VCOMP − 2.5) × VMULT where VCS (Multiplier output) is the reference for the current sense, k is the multiplier gain, VCOMP is the voltage on pin 2 (error amplifier output) and VMULT is the voltage on pin 3. To make the over voltage protection fast, the internal OVP function is added. If the output over voltage happens, excess current will flow into the output pin of the error amplifier through the feedback compensation capacitor. (see Figure 22) The AP1662 monitors the current flowing into the error amplifier output pin. When the detected current is higher than 40µA, the dynamic OVP is triggered. The IC will be Current Sense/Current Comparator Sense The PFC switch's turn-on current is sensed through an external resistor in series with the switch. When the sensed voltage exceeds the threshold voltage (the multiplier output), the current sense comparator will become low and the external MOSFET will be turned off. This insures a cycle-by-cycle current mode control operation. The maximum current sense reference is 1.8V. The max value usually happens at startup process or abnormal conditions such as short load. Figure 22. Error Amplifier and OVP Block Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 14 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 ZCD pin voltage decreases below 1.6V, the gate drive signal becomes high to turn on the external MOSFET. 500mV of hysteresis is provided to avoid false triggering. The ZCD pin can be used for disabling the IC. Making its voltage below 0.15V or short to the ground will disable the device thus reduce the IC supply current consumption. Functional Block Description （Continued） Zero Current Detection AP1662 is a DCM boundary conduction current mode PFC controller. Usually, the zero current detection (ZCD) voltage signal comes from the auxiliary winding of the boost inductor. When the Typical Application Figure 23. 85 to 265V Wide Range Input 90W PFC Demo Board Electrical Schematic Circuit Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 15 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Mechanical Dimensions SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.800(0.031) 0.300(0.012) R0.150(0.006) 0.100(0.004) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.190(0.007) 0.250(0.010) 1° 5° 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 16 Data Sheet HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Mechanical Dimensions (Continued) DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Note: Eject hole, oriented hole and mold mark is optional. Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 17 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788