DMG4468LK3 N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Green Features Mechanical Data • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage • • • • • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.33 grams (approximate) D D G D G TOP VIEW Ordering Information PIN OUT -TOP VIEW S Equivalent Circuit (Note 4) Part Number DMG4468LK3-13 Notes: S Case TO252 Packaging 2500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information N4468L YYWW DMG4468LK3 Document number: DS31958 Rev. 3 - 2 = Manufacturer’s Marking N4468L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01-52) 1 of 6 www.diodes.com June 2013 © Diodes Incorporated DMG4468LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Unit V V IDM Symbol PD R• JA TJ, TSTG Value 1.68 74.3 -55 to +150 Unit W °C/W °C TA = +25°C TA = +85°C Steady State Continuous Drain Current (Note 5) Value 30 ±20 9.7 6.3 48 ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 1.0 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.05 - 1.95 V RDS (ON) - 11 17 16 25 mΩ |Yfs| VSD - 8 0.73 1.0 S V VDS = VGS, ID = 250µA VGS = 10V, ID = 11.6A VGS = 4.5V, ID = 10A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 867 85 81 1.39 18.85 2.59 6.15 5.46 14.53 18.84 6.01 - pF pF pF Ω nC nC nC ns ns ns ns VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 11.6A VDD = 15V, VGS = 10V, RL = 1.3Ω, RG = 3Ω 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG4468LK3 Document number: DS31958 Rev. 3 - 2 2 of 6 www.diodes.com June 2013 © Diodes Incorporated DMG4468LK3 20 30 VDS = 5.0V VGS = 10V ID, DRAIN CURRENT(A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 4.0V 20 VGS = 3.5V 15 10 15 10 TA = 150°C TA = 125°C 5 TA = 85°C VGS = 3.0V 5 TA = 25°C TA = -55°C VGS = 2.5V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics 0 0.040 0.036 0.032 0.028 0.024 VGS = 4.5V 0.020 0.016 VGS = 10V 0.012 0.008 0.004 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 2 RDS(on) DRAIN SOURCE ON-RESISTANCE (Ω) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 30 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 4 0.05 VGS = 4.5V 0.04 TA = 150°C 0.03 TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 1.7 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.05 RDS(ON) STATIC DRAIN SOURCE ON-STATE RESISTANCE (Ω) 1.5 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) NEW PRODUCT 25 1.3 1.1 VGS = 4.5A ID = 5A 0.9 VGS = 10A ID = 10A 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG4468LK3 Document number: DS31958 Rev. 3 - 2 3 of 6 www.diodes.com 0.04 0.03 VGS = 10A ID = 10A 0.02 0.01 0 -50 VGS = 4.5A ID = 5A -25 0 25 50 75 100 125 150 TA AMBIENT TEMPERATURE (°C) Fig. 6 Typical Static Drain-Source On-State Resistance vs. Ambient Temperature June 2013 © Diodes Incorporated DMG4468LK3 2.5 IDSS, LEAKAGE CURRENT (nA) VGS(TH), GATE THRESHOLD VOLTAGE (V) 10,000 2.0 ID = 1mA 1.5 ID = 250µA 1.0 1,000 TA = 150°C TA = 125°C 100 TA = 85°C 10 0.5 TA = 25°C 1 0 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Drain-Source Leakage Current vs Voltage 20 1,000 IGSS, LEAKAGE CURRENT(nA) IS, SOURCE CURRENT (A) 18 TA = 25°C 16 14 12 10 8 6 4 100 TA = 85°C 10 TA = 125°C TA = -55°C TA = 150°C TA = 25°C 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 2 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE(V) Fig. 10 Gate-Source Leakage Current vs. Voltage 1.2 1,000 4 100 P(pk), PEAK TRANSIENT POWER (W) IGSS, LEAKAGE CURRENT(nA) NEW PRODUCT 3.0 100 TA = 125°C TA = 150°C TA = 85°C 10 TA = -55°C TA = 25°C 1 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE(V) Fig. 11 Gate-Source Leakage Current vs. Voltage DMG4468LK3 Document number: DS31958 Rev. 3 - 2 4 of 6 www.diodes.com 90 80 Single Pulse RθJA = 77°C/W RθJA(t) = RθJA * r(t) TJ - TA = P * RθJA(t) 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 12 Single Pulse Maximum Power Dissipation June 2013 © Diodes Incorporated DMG4468LK3 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 76°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Y2 C Y1 X1 DMG4468LK3 Document number: DS31958 Rev. 3 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 5 of 6 www.diodes.com June 2013 © Diodes Incorporated DMG4468LK3 IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DMG4468LK3 Document number: DS31958 Rev. 3 - 2 6 of 6 www.diodes.com June 2013 © Diodes Incorporated