BCR30AM-12LB Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0472-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT(RMS) : 30 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 50 mA Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 2, 4 3 1 1. 2. 3. 4. 1 2 T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 Applications Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off control of copier lamp Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Symbol Voltage class Repetitive peak off-state voltageNote1 VDRM 12 600 Non-repetitive peak off-state voltageNote1 VDSM 720 REJ03G0472-0300 Page 1 of 7 Rev.3.00 Nov 30, 2007 Unit V V BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Symbol IT(RMS) Ratings 30 Unit A Surge on-state current ITSM 300 A I2 t 378 A2s PGM PG(AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +150 – 40 to +150 4.8 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave, Tc = 100°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Symbol IDRM VTM Min. — — Typ. — — Max. 3.0/5.0 1.6 Unit mA V Test conditions Tj = 125°C/150°C, VDRM applied Tc = 25°C, ITM = 45A VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth(j-c) — — — — — — 0.2/0.1 — — — — — — — — — 2.5 2.5 2.5 50 50 50 — 1.2 V V V mA mA mA V °C/W Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C/150°C, VD = 1/2VDRM Junction to caseNote3 (dv/dt)c 20/2 — — V/µs Tj = 125°C/150°C Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.3°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –16 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0472-0300 Page 2 of 7 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms inductive load Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C) Performance Curves 103 7 5 3 2 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 300 200 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V 101 7 5 VGT = 2.5V 3 2 PG(AV) = 0.5W PGM = 5W IGM = 2A 100 7 5 3 2 10–1 7 IFGT I, IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 400 0 100 4.0 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT I, IRGT III IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140160 Junction Temperature (°C) REJ03G0472-0300 Page 3 of 7 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Surge On-State Current (A) 500 102 7 5 3 2 5 3 2 Rated Surge On-State Current Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C) Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 40 360° Conduction Resistive, 30 inductive loads 20 10 0 20 30 40 50 140 120 100 Curves apply regardless of conduction angle 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 5 10 15 20 25 30 35 40 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 10 140 All fins are black painted aluminum and greased 120 160 × 160 × t2.3 100 120 × 120 × t2.3 80 100 × 100 × t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 5 10 15 20 25 30 35 160 Ambient Temperature (°C) 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 160 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 40 0 1 2 3 4 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100120 140160 REJ03G0472-0300 Page 4 of 7 Junction Temperature (°C) Rev.3.00 Nov 30, 2007 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) 50 103 7 5 4 3 2 5 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100120 140160 Junction Temperature (°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120140160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 102 7 5 3 2 3 2 100 7 1 10 III Quadrant I Quadrant 3 2 100 7 1 10 Minimum Characteristics Value 2 3 5 7 102 2 3 5 7 103 Rate of Decay of On-State Commutating Current (A/ms) REJ03G0472-0300 Page 5 of 7 Rev.3.00 Nov 30, 2007 III Quadrant Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant 2 3 5 7 102 2 3 5 7 103 Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 101 7 5 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Rate of Decay of On-State Commutating Current (A/ms) Commutation Characteristics (Tj=150°C) 102 Typical Example 7 Tj = 150°C 5 I = 4A T 3 τ = 500µs 2 VD = 200V f = 3Hz Minimum Characteristics Value 101 7 5 Rate of Rise of Off-State Voltage (V/µs) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Typical Example Tj = 125°C 140 Junction Temperature (°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C) 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I V A V 330Ω Test Procedure III REJ03G0472-0300 Page 6 of 7 330Ω Test Procedure II 6Ω 6V R1 A 6V 330Ω Rev.3.00 Nov 30, 2007 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R1 = 47 to 100Ω R0 = 100Ω BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C) Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 2.0 0.3 19.9 ± 0.2 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 20 30 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G0472-0300 Page 7 of 7 Rev.3.00 Nov 30, 2007 Standard order code example BCR30AM-12LB BCR30AM-12LB-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2007. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.2