Data Sheet Shottky barrier diode RB491D Dimensions (Unit : mm) Application Low current rectification Lead size figure (Unit : mm) －0.05 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 2.9±0.2 各リードとも 同寸法 Each lead has same dimension ＋0.1 0.15－0.06 0.95 ＋0.2 1.6－0.1 (3) 2.8±0.2 2.4 0.4 ＋0.1 1.0MIN. 0.8MIN. 1.9 (1) 0.95 Structure Silicon epitaxial planar 0.8±0.1 0.95 0.3～0.6 0～0.1 (2) SMD3 0.2 1.1±0.2 1.1 0.1 0.01 1.9±0.2 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping dimensions (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 3.2±0.1 3.2±0.1 8.0±0.2 0～0.5 φ1.05MIN 4.0±0.1 3.2±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits Unit 25 20 1 3 125 40 to 125 V V A A °C °C (*1) Rating of per diode Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF Min. Typ. Max. Unit - - 0.45 V IR - - 200 μA 1/3 Conditions IF=1A VR=20V 2011.03 - Rev.D Data Sheet RB491D 100000 1 Ta=125℃ 0.1 Ta=25℃ Ta=-25℃ 0.01 10000 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.001 100 200 300 400 500 600 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 20 500 410 400 390 400 350 300 250 200 150 AVE:37.93uA 100 AVE:399.2m 180 170 160 150 140 130 120 100 IR DISPERSION MAP Ct DISPERSION MAP 20 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 10 AVE:11.1A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 5 AVE:9.3ns PEAK SURGE FORWARD CURRENT:IFSM(A) 20 30 20 AVE:159.8pF 110 0 VF DISPERSION MAP Ifsm 15 8.3ms 8.3ms 1cyc 10 0 0 5 0 1 t 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Per chip Rth(j-a) Rth(j-c) 100 Mounted on epoxy board 10 IM=1mA 1ms IF=10mA D=1/2 DC 0.5 Sin(θ＝180) time 300us 1 0.001 FORWARD POWER DISSIPATION:Pf(W) Ifsm 100 1 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 15 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 50 380 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25℃ VR=20V n=30pcs 450 REVERSE CURRENT:IR(uA) Ta=25℃ IF=1A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 420 FORWARD VOLTAGE:VF(mV) f=1MHz 100 0.1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1000 Ta=125℃ Ta=75℃ 0.1 0 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.03 - Rev.D Data Sheet RB491D 0.3 3 3 0.2 0.15 D=1/2 DC Sin(θ＝180) 0.05 0A 0V 2.5 2 Io t D=1/2 DC 1.5 T VR D=t/T VR=10V Tj=125℃ 1 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.25 0.1 Per chip Per chip Per chip 2.5 2 DC 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 20 Io t VR D=t/T VR=10V T Tj=125℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) Sin(θ＝180) 0 0A 0V 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 3/3 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A