Data Sheet Shottky barrier diode RB081L-20 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 ① ② 3) High reliability. 0.1±0.02 0.1 5.0±0.3 9 4.5±0.2 3 1.2±0.3 4.2 Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. PMDS Construction Silicon epitaxial planar 2.0±0.2 1.5±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacuture Date Taping specifications (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Limits 25 20 5 70 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A °C °C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Symbol VF Min. Typ. Max. Unit Forward voltage - - 0.45 V IF=5.0A Reverse current IR - - 700 μA VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 Conditions 2011.04 - Rev.B Data Sheet RB081L-20 1000000 1000 1 Ta=125℃ REVERSE CURRENT:IR(uA) Ta=25℃ 0.1 Ta=-25℃ 0.01 100000 Ta=75℃ 10000 Ta=25℃ 1000 100 Ta=-25℃ 10 0.001 100 200 300 400 500 600 5 10 15 20 25 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 1000 390 380 370 360 800 700 600 500 400 300 200 AVE:380.3mV 100 350 0 VF DISPERSION MAP 8.3ms 150 100 50 AVE:196.0A REVERSE RECOVERY TIME:trr(ns) Ifsm 200 930 920 910 900 890 880 870 AVE:898.1pF 860 AVE:201.3uA 850 Ct DISPERSION MAP 300 30 1cyc Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 Ifsm 250 8.3ms 8.3ms 1cyc 200 150 15 100 10 AVE:11.7ns 5 0 50 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP Ifsm t 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Mounted on epoxy board 4 Rth(j-a) 100 Rth(j-c) 10 IF=1A IM=100mA 1 1ms FORWARD POWER DISSIPATION:Pf(W) 250 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 5 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 30 Ta=25℃ f=1MHz VR=0V n=10pcs 940 IR DISPERSION MAP 300 250 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 950 Ta=25℃ VR=20V n=30pcs 900 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=5A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1 0 f=1MHz Ta=125℃ PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 D=1/2 3 DC Sin(θ＝180) 2 1 time 300us 0.1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 10 2011.04 - Rev.B Data Sheet RB081L-20 2 10 10 Sin(θ＝180) DC 1 D=1/2 0.5 8 t 7 T 6 DC 5 VR D=t/T VR=10V Tj=125℃ D=1/2 4 Sin(θ＝180) 3 2 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS t 8 7 T D=1/2 6 VR D=t/T VR=10V Tj=125℃ - 5 4 3 Sin(θ＝180) 2 0 0 0 Io 0A 0V DC 1 1 0 9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1.5 Io 0A 0V 9 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 AVE:24.8kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A