ROHM RFU10TF6S_11

Data Sheet
Super Fast Recovery Diode
RFU10TF6S
Series
Ultra Fast Recovery
Dimentions(Unit : mm)
Structure
Applications
General rectification
(1)
(3)
Features
1)Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial plnner
(1)
Absolute maximum ratings(Tc=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics(Tj=25C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
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(3)
Conditions
Duty≦0.5
Direct voltage
Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
60Hz half sin wave, Resistance load,
Conditions
IF=10A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×I R
junction to case
1/3
Min.
-
Limits
600
600
10
Unit
V
V
A
100
A
150
55 to 150
C
C
Typ.
2.3
0.03
16
-
Max.
2.8
10
25
3.5
Unit
V
μA
ns
C / W
2011.06 - Rev.A
Data Sheet
RFU10TF6S
Electrical characteristics curves
100000
Tj=150C
10
Tj=25C
Tj=75C
1
1000
Tj=75C
100
Tj=25 C
10
1
0.1
0
1000
2000
3000
4000
0
5000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
200
300
400
500
10
0
2300
2200
AVE : 2249mV
2100
Tｊ=25C
VR=600V
n=20pcs
AVE : 47.3nA
10
VF DISPERSION MAP
1cyc
IFSM
8.3ms
Ta=25C
f=1MHz
VR=0V
n=10pcs
AVE : 221.3pF
210
200
1000
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
25
20
15
AVE : 16.2ns
10
5
100
10
IFSM
8.3ms
8.3ms
1cyc.
1
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
5
1000
30
220
0
0
25
230
PEAK SURGE
FORWARD CURRENT : I FSM(A)
100
REVERSE RECOVERY TIME : trr(ns)
AVE : 150.0A
20
Ct DISPERSION MAP
30
150
15
240
IR DISPERSION MAP
200
10
250
1
2000
50
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
Tｊ=25C
IF=10A
n=20pcs
2400
100
600
100
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
100
f=1MHz
Tj=25C
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
2500
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT: : I FSM(A)
1000
Tj=125°C
10000
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(A)
Tj=125C
Tj=150°C
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
100
100
10
time
100
4
3.5
AVE：4.11kV
3
2.5
2
1.5
1
0.5
AVE：1.14kV
0
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
C=100pF
R=1.5k
C=200pF
R=0
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE : Rth (℃/W)
IFSM
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
4.5
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.06 - Rev.A
45
16
D=0.8
D.C.
40
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
14
D.C.
D=0.5
35
half sin wave
30
D=0.2
25
D=0.1
20
Data Sheet
RFU10TF6S
D=0.05
15
10
5
0
0A
Io
0V
D=0.8
12
VR
t
D=0.5
T
D=t/T
VR=480V
Tj=150C
10
half sin wave
8
6
D=0.2
4
D=0.1
2
D=0.05
0
0
3
6
9
12
15
18
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0
30
60
90
120
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
150
2011.06 - Rev.A
Notice
Notes
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R1120A