Data Sheet Super Fast Recovery Diode RF305B6S Dimensions (Unit : mm) Series Standard Fast Recovery Land size figure (Unit : mm) 6.0 2.3±0.2 0.1 5.5±0.3 0.1 1.5±0.3 6.0 0.5±0.1 5.1±0.2 0.1 C0.5 Applications General rectification 1.6 0.65±0.1 （1） （2） （3） 9.5±0.5 2.5 0.75 0.9 0.8 min ① Features 1)Low forward voltage 2)Low switching loss 1.0±0.2 Structure ROHM : CPD JEITA : SC-63 ① 2.3 2.3 0.5±0.1 2.3±0.2 2.3±0.2 Construction Silicon epitaxial planer CPD 1.6 3.0 2.0 6.5±0.2 Manufacture Date Taping dimensions (Unit : mm) 2.0±0.05 φ1.55±0.1 0 8.0±0.1 0.4±0.1 Average rectified forward current Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Thermal resistance Rth(j-l) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Conditions Duty≤0.5 Direct voltage 60Hz half sin wave, resistive load Tc=83°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Conditions IF=3.0A VR=600V IF=0.5A,IR=1A,Irr=0.25×I R junction to lead 1/4 Min. － － － － 10.1±0.1 10.1±0.1 Absolute maximum ratings (Tc=25C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage φ3.0±0.1 8.0±0.1 0～0.5 6.8±0.1 13.5±0.2 TL 16.0±0.2 7.5±0.05 2.5±0.1 4.0±0.1 2.7±0.2 Limits 600 600 Unit V V 3.0 A 50 A 150 55 to 150 C C Typ. 1.3 0.04 22 － Max. 1.7 10 30 12 Unit V μA ns °C/W 2011.10 - Rev.A Data Sheet RF305B6S 100000 100 10 REVERSE CURRENT : IR(nA) FORWARD CURRENT : IF(A) Tj=150°C Tj=125°C Tj=150°C Tj=-25°C 1 Tj=25°C Tj=75°C 0.1 10000 Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 1 0.01 0 500 1000 1500 2000 0 2500 200 300 400 500 600 1400 1000 f=1MHz IF=3A Tj=25°C 1380 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 100 10 1360 1340 1320 1300 1280 1260 1240 AVE:1282mV 1220 1 1200 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 130 VR=600V f=1MHz VR=0V Tj=25°C 120 AVE:33.5nA 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) Tj=25°C 110 100 90 AVE:100.2pF 80 1 IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2011.10 - Rev.A 150 30 IFSM REVERSE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT: IFSM(A) Data Sheet RF305B6S 8.3ms 1cyc. 100 AVE:83.5A 50 0 IF=0.5A IR=1A Irr=0.25×IR 25 Tj=25°C 20 AVE:19.9ns 15 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) 1000 100 10 IFSM 8.3ms IFSM t 100 8.3ms 1cyc 1 10 1 10 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 30 No break at 30kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 AVE:13.9kV 5 0 C=200pF C=100pF R=0Ω R=1.5kΩ 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Rth(j-c) 3/4 2011.10 - Rev.A 5 9 D.C. 8 4.5 D.C. D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 7 D=0.5 FORWARD POWER DISSIPATION:Pf(W) Data Sheet RF305B6S 6 half sin wave 5 D=0.2 4 D=0.1 3 D=0.05 2 D=0.5 3.5 VR t T 3 2.5 D=t/T VR=480V Tj=150°C half sin wave 2 D=0.2 1.5 D=0.1 1 1 Io 0A 0V D=0.8 4 D=0.05 0.5 0 0 0 1 2 3 4 5 0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4.5 4 D=0.8 3.5 D=0.5 Io 0A 0V D.C. VR t T D=t/T VR=480V Tj=150°C 3 half sin wave 2.5 2 D=0.2 1.5 D=0.1 1 D=0.05 0.5 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A