ROHM RFN10T2D

Data Sheet
Super Fast Recovery Diode
RFN10T2D
Dimensions (Unit : mm)
Applications
General rectification
Structure
4.5±0.3
0.1
2.8±0.2
0.1
①
1.3
0.8
13.5MIN
1.2
Construction
Silicon epitaxial planer
5.0±0.2
RFN10
T2D ①
14.0±0.5
3)Low switching loss
8.0±0.2
12.0±0.2
Features
1)Cathode common Dual type. (TO-220)
2)Low VF
15.0±0.4
0.2
8.0
10.0±0.3
0.1
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
①
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
dot (year week factory)
Conditions
Duty≤0.5
Direct voltage
60Hz half sin wave, Resistance load,
Tc=122°C
1/2Io at per diode
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
200
200
Unit
V
V
10
A
80
A
150
55 to 150
C
C
Conditions
Min.
Typ.
Max.
IF=5A
Unit
－
0.90
0.98
V
Reverse current
IR
VR=200V
－
0.01
10
μA
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×I R
－
15
25
ns
Rth(j-c)
junction to case
－
－
2.5
°C/W
Thermal Resistance
* per diode
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.12 - Rev.A
Data Sheet
RFN10T2D
10000
100
1000
Tj=150°C
10
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=150°C
1
Tj=125°C
Tj=25°C
0.1
Tj=75°C
0.01
0.001
Tj=125°C
100
Tj=75°C
10
Tj=25°C
1
0.1
0
500
1000
1500
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
50
100
FORWARD VOLTAGE:VF(mV)
f=1MHz
Tj=25°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
200
1000
1000
100
10
Tj=25°C
IF=5A
n=20pcs
950
900
AVE:887.5mV
850
800
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
150
Tj=25°C
VR=200V
n=20pcs
10
AVE:14.3nA
Ta=25°C
f=1MHz
VR=0V
n=10pcs
140
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
150
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
130
AVE:133.2pF
120
110
1
100
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
Data Sheet
RFN10T2D
30
200
REVERSE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
180
160
140
AVE:167A
120
100
80
60
1cyc
IFSM
40
20
Tj=25°C
IF=0.5A
IR=1.0A
Irr=0.25×IR
n=10pcs
25
20
15
10
AVE:14.1ns
5
8.3ms
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
100
10
IFSM
8.3ms
IFSM
time
100
10
8.3ms
1cyc.
1
1
1
10
1
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
10
No break at 30kV
20
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
AVE：24.75kV
15
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Rth(j-a)
3/4
2011.12 - Rev.A
Data Sheet
RFN10T2D
20
16
VR
t
14
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=1/2
FORWARD POWER
DISSIPATION:Pf(W)
Io
0A
0V
D.C.
12
Sin(θ＝180)
10
8
6
4
T
15
D=t/T
VR=100V
Tj=150°C
D=1/2
10
Sin(θ＝180)
5
2
0
0
0
5
10
15
0
20
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
4/4
2011.12 - Rev.A
Notice
Notes
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R1120A