ROHM RFUS10TF4S

Data Sheet
Super Fast Recovery Diode
RFUS10TF4S
lSeries
Standard Fast Recovery
lDimensions (Unit : mm)
lStructure
lApplications
General rectification
RFUS10
TF4S
lFeatures
1)Single type.(TO-220)
2)High switching speed
①
②
lConstruction
Silicon epitaxial planer
ROHM : TO220NFM
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
lElectrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
①
Manufacture Year
②
Manufacture Week
Conditions
Duty≤0.5
Tc=82°C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
60Hz half sin wave, Resistance load,
Limits
430
430
10
Unit
V
V
A
80
A
150
-55 to +150
C
C
Conditions
IF=10A
Min.
Typ.
Max.
Unit
－
1.45
1.7
V
Reverse current
IR
VR=430V
－
0.05
10
μA
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×IR
－
19
30
ns
Rth(j-c)
junction to case
－
－
3
°C/W
Thermal resistance
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Data Sheet
RFUS10TF4S
100000
100
Tj=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=125°C
Tj=150°C
10
Tj=25°C
Tj=75°C
1
10000
Tj=125°C
1000
Tj=75°C
100
Tj=25°C
10
1
0.1
0
1
2
0
3
1000
200
300
400
1700
f=1MHz
1650
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
100
10
IF=10A
Tj=25°C
1600
1550
1500
1450
1400
1350
AVE:1436mV
1300
1250
1200
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
250
100
f=1MHz
VR=0V
Tj=25°C
240
230
10
AVE:13.6nA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
VR=430V
Tj=25°C
220
210
200
AVE:182.2pF
190
180
170
160
150
1
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.10 - Rev.A
Data Sheet
RFUS10TF4S
30
250
IFSM
REVERSE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
300
8.3ms
1cyc.
200
AVE:134.5A
150
100
IF=0.5A
IR=1.0A
Irr=0.25×IR
25
Tj=25°C
20
15
AVE:17.9ns
10
50
5
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
100
10
100
10
1
1
10
1
100
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
8
6
4
AVE：0.66kV
AVE：4.5kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
2
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
10
0
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Rth(j-c)
3/4
2011.10 - Rev.A
40
12
35
D.C.
D.C.
10
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=0.8
30
FORWARD POWER
DISSIPATION:Pf(W)
Data Sheet
RFUS10TF4S
D=0.5
half sin wave
25
D=0.2
20
D=0.1
15
D=0.05
10
Io
0A
0V
D=0.8
VR
D=0.5
8
t
half sin wave
T
D=t/T
VR=215V
Tj=150°C
6
D=0.2
D=0.1
4
D=0.05
2
5
0
0
0
5
10
15
20
0
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
30
60
90
120
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
18
D.C.
16
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io
0A
0V
D=0.8
VR
14
t
D=0.5
12
T
D=t/T
VR=215V
Tj=150°C
10
half sin wave
8
6
D=0.2
4
D=0.1
2
D=0.05
0
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
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Notes
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R1120A