ROHM RFUS20TF6S

Data Sheet
Super Fast Recovery Diode
RFUS20TF6S
Dimensions (Unit : mm)
Series
Ultra Fast Recovery
Structure
Applications
General rectification
(1)
(3)
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial planer
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
IR
Reverse recovery time
trr
Thermal resistance
Rth(j-c)
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© 2011 ROHM Co., Ltd. All rights reserved.
Conditions
Limits
Unit
Duty0.5
Direct voltage
600
600
20
V
V
A
100
A
150
55 to 150
C
C
Tc=30C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25 C
60Hz half sin wave, Resistance load,
Conditions
Min.
Typ.
Max.
IF=20A
-
2.2
2.8
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
-
0.1
23
-
10
35
2
junction to case
1/3
Unit
V
μA
ns
C/W
2011.06 - Rev.A
Data Sheet
RFUS20TF6S
Electrical characteristic curves
100000
10
10000
REVERSE CURRENT : IR(nA)
Tj=25C
Tj=75C
1
Tj=125C
1000
Tj=75C
100
10
Tj=25C
1
0.1
0
1000
2000
3000
0
4000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
150
200
250
300
10
350
0
AVE : 2113mV
2300
2200
2100
Tｊ=25C
VR=600V
n=20pcs
100
10
AVE : 61.8nA
2000
1
1900
VF DISPERSION MAP
8.3ms
200
150
100
AVE : 156A
50
REVERSE RECOVERY TIME : trr(ns)
1cyc
IFSM
435
430
425
420
AVE : 415.9pF
415
410
405
400
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
30
25
20
AVE : 26.1ns
15
100
10
IFSM
8.3ms
1
15
12
9
AVE : 11.0kV
6
AVE : 1.20kV
3
0
10
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
100
10
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
100
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
time
8.3ms
1cyc.
1
IFSM
30
1000
35
IFSM DISRESION MAP
1000
25
Ta=25C
f=1MHz
VR=0V
n=10pcs
440
10
0
20
Ct DISPERSION MAP
40
250
15
445
IR DISPERSION MAP
300
10
450
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
Tｊ=25C
IF=20A
n=20pcs
2400
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
1000
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
100
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
2500
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I FSM(A)
50
f=1MHz
Tj=25C
PEAK SURGE
FORWARD CURRENT : I FSM(A)
FORWARD CURRENT : I F(A)
Tj=150C
1000
Tj=150C
Tj=125C
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
100
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
2011.06 - Rev.A
100
D.C.
D=0.8
D=0.5
70
half sin wave
60
D=0.2
50
D=0.1
40
D=0.05
30
20
10
0
Io
0A
30
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
35
D.C.
90
80
Data Sheet
RFUS20TF6S
0V
VR
t
25
D=0.5
D=t/T
VR=480V
T
Tj=150C
D=0.8
20
half sin wave
15
D=0.2
10
D=0.1
5
D=0.05
0
0
5
10
15
20
25
30
35
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0
30
60
90
120
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
150
2011.06 - Rev.A
Notice
Notes
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R1120A