Data Sheet 10V Drive Nch MOSFET RCX080N25 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 0.8 2.54 2.54 2.6 0.75 (1) (2) (3) Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RCX080N25 Inner circuit Bulk 500 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Avalanche current Avalanche energy VGSS ID *3 IDP *1,3 IS ISP IAS *1 *2 Power dissipation EAS *2 PD *4 Channel temperature Range of storage temperature Tch Tstg ∗1 (1) Gate (2) Drain (3) Source Limits Unit 250 30 8 V V A 32 8 32 A A A 4 4.66 35 A mJ W 150 55 to 150 C C Limits 3.57 Unit C / W (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case Symbol Rth (ch-c)* * T C=25°C * Limited only by maximum channel temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.11 - Rev.A Data Sheet RCX080N25 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 100 nA Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Conditions VGS=30V, VDS=0V 250 - - V ID=1mA, V GS=0V IDSS - - 10 A VDS=250V, VGS=0V VGS (th) 3.0 - 5.0 V VDS=10V, ID=1mA RDS (on)* - 460 600 l Yfs l* 2.2 - - S VDS=10V, ID=4A m ID=4A, VGS=10V Input capacitance Ciss - 840 - pF VDS=25V Output capacitance Coss - 50 - pF VGS=0V Reverse transfer capacitance Crss - 25 - pF f=1MHz Turn-on delay time td(on) * tr * - 22 - ns VDD 125V, I D=4A - 28 - ns VGS=10V td(off) * tf * - 28 - ns RL=31.25 - 14 - ns RG=10 - 15 - nC VDD 125V, I D=8A Gate-source charge Qg * Qgs * Gate-drain charge Qgd * - 6.25 5.5 - nC nC VGS=10V RL=15.62, RG=10 Typ. - Max. 1.5 Rise time Turn-off delay time Fall time Total gate charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Min. - Unit V Conditions Is=8A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.11 - Rev.A Data Sheet RCX080N25 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 2 8 Ta=25°C pulsed Ta=25°C pulsed VGS=10.0V VGS=10.0V 6 VGS=8.0V Drain Current : ID [A] Drain Current : ID [A] 1.5 1 VGS=7.0V 0.5 VGS=8.0V 4 2 0 VGS=7.0V 0 0 0.2 0.4 0.6 0.8 1 0 2 4 Fig.3 Typical Transfer Characteristics 8 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature 10 10 VDS=10V pulsed VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Drain Current : ID [A] 6 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] 0.1 0.01 8 6 4 2 0 0.001 0 2 4 6 8 -50 10 -25 Gate-Source Voltage : VGS [V] 25 50 75 100 125 150 Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 2000 10000 VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VGS=10V pulsed 1800 Static Drain-Source On-State Resistance RDS(on) [mW] Static Drain-Source On-State Resistance RDS(on) [mW] 0 Channel Temperature : T ch [℃] 1000 100 1600 1400 1200 ID=8.0A 1000 800 600 ID=4.0A 400 200 10 0.01 0 0.1 1 10 100 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] 3/6 2011.11 - Rev.A Data Sheet RCX080N25 Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Forward Transfer Admittance vs. Drain Current 10 10 VGS=0V pulsed 1 Source Current : IS [A] Forward Transfer Admittance |Yfs| [S] VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.1 1 10 0.0 0.5 Drain Current : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 VDD≒125V VGS=10V RG=10W Ta=25°C Pulsed Ta=25°C pulsed 1300 1000 1100 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [mW] 1.5 Fig.10 Switching Characteristics 1500 ID=8.0A 900 ID=4.0A 700 500 tf 100 td(off) 10 tr 300 td(on) 1 100 0 2 4 6 8 10 12 14 16 18 0.01 20 0.1 1 10 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 10000 15 Ta=25°C f=1MHz VGS=0V Ta=25°C VDD=125V ID=8A Pulsed Ciss 1000 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1.0 Source-Drain Voltage : VSD [V] 10 100 Coss 5 10 Crss 1 0 0 5 10 15 20 25 0.01 30 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] 4/6 2011.11 - Rev.A RCX080N25 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current Reverse Recovery Time : trr [ns] 1000 Ta=25°C VGS=0V di/dt=100A/μs Pulsed 100 10 0 1 10 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.11 - Rev.A Data Sheet RCX080N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 2 L IAS V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A