Data Sheet 4V Drive Nch MOSFET RSJ300N10 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3) Application Switching Packaging specifications Inner circuit Package Code Basic ordering unit (pieces) RSJ300N10 Taping TL 1000 Type ∗1 ∗2 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage VDSS 100 V Gate-source voltage VGSS 20 V Drain current Source current (Body Diode) Unit Continuous ID *1 30 A Pulsed Continuous IDP IS *2 *1 60 30 A A ISP *2 60 A PD *3 50 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit 2.5 C / W Pulsed Power dissipation Channel temperature Range of storage temperature (1) Gate (2) Drain (3) Source (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Limited only by maximum temperature allowed. *2 Pw≦10s, Duty cycle≦1% *3 Tc=25℃ Thermal resistance Parameter Channel to Case Rth (ch-c)* *Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A Data Sheet RSJ300N10 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V 100 - - V ID=1mA, VGS=0V Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 1 A VDS=100V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS (on)* - 33 52 ID=15A, VGS=10V - 36 58 m ID=15A, VGS=4.5V - 38 59 ID=15A, VGS=4.0V Forward transfer admittance l Yfs l* 15 - - S ID=15A, VDS=10V Input capacitance Ciss - 2200 - pF VDS=25V Zero gate voltage drain current Output capacitance Coss - 190 - pF VGS=0V Reverse transfer capacitance Crss - 120 - pF f=1MHz Turn-on delay time td(on) * - 20 - ns ID=15A, VDD 50V Rise time tr * td(off) * - 65 - ns VGS=10V - 130 - ns RL=3.3 Turn-off delay time Fall time tf * - 180 - ns RG=10 Total gate charge Qg * - 50 - nC ID=30A, VDD 50V Gate-source charge Gate-drain charge Qgs * Qgd * - 6 15 - nC nC VGS=10V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.5 V Conditions Is=30A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Data Sheet RSJ300N10 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) 30 30 Ta=25°C Pulsed 25 VGS= 10V VGS= 4.5V VGS= 4.0V Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V 25 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] VGS= 3.0V 20 VGS= 3.0V 15 10 5 20 15 10 5 VGS= 2.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 4 6 8 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 100 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed DRAIN CURRENT : ID[A] 2 DRAIN-SOURCE VOLTAGE : VDS[V] 100 0.1 0.01 VGS= 4.0V VGS= 4.5V VGS= 10V . 10 0.001 0 1 2 0.01 3 0.1 1 10 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 2.5V Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.1 1 10 100 0.1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 1 10 DRAIN-CURRENT : ID[A] 100 2011.08 - Rev.A Data Sheet RSJ300N10 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 1000 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.1 1 10 VDS= 10V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 100 0.1 1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 100 100 100 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 ID= 15.0A Ta=25°C Pulsed 80 ID= 30.0A 60 40 20 0 0 0.5 1 1.5 0 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Switching Characteristics 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] 10 Fig.12 Dynamic Input Characteristics 10 10000 tf 1000 GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD=50V VGS=10V RG=10Ω Pulsed td(off) SWITCHING TIME : t [ns] 10 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] 100 td(on) 10 tr 1 8 6 4 Ta=25°C VDD= 50V ID= 30A RG=10Ω Pulsed 2 0 0.01 0.1 1 10 100 0 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 TOTAL GATE CHARGE : Qg [nC] 4/6 2011.08 - Rev.A Data Sheet RSJ300N10 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera 10000 1000 Operation in this area is limited by RDS(ON) (VGS=10V) Ciss DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] 100 1000 Crss 100 Coss PW =100us 10 1 PW =1ms PW = 10ms 0.1 Ta=25°C f=1MHz VGS=0V DC operation TC=25°C Single Pulse 10 0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 0.01 Ta = 25°C Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 65.8 °C/W 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A Data Sheet RSJ300N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A