Data Sheet 10V Drive Nch MOSFET R5005CNJ Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 4.5 2.54 (1) Gate (2) Drain (3) Source 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3) Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) R5005CNJ Inner circuit Taping TL 1000 ∗1 ∗2 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Continuous VGSS ID Pulsed Continuous IDP IS *1 Pulsed ISP *1 Avalanche current Avalanche energy IAS EAS *2 Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *4 Drain current Source current (Body Diode) *3 *3 *2 (1) Gate (2) Drain (3) Source Limits Unit 500 30 5 V V A 20 5 A A 20 2.5 1.6 A A mJ 40 150 55 to 150 W C C Limits 3.125 Unit C / W (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol Rth (ch-c) 1/5 2011.10 - Rev.A Data Sheet R5005CNJ Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Max. Unit - - 10 A VGS=25V, VDS=0V 500 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions Typ. IDSS - - 100 A VDS=500V, VGS=0V VGS (th) 2.5 - 4.5 V VDS=10V, ID=1mA RDS (on)* - 1.3 1.6 ID=2.5A, VGS=10V l Yfs l* 1.5 2.7 - S VDS=10V, ID=2.5A Input capacitance Ciss - 320 - pF VDS=25V Output capacitance Coss - 180 - pF VGS=0V Reverse transfer capacitance Crss - 15 - pF f=1MHz Turn-on delay time td(on) * - 20 - ns VDD 250V, ID=2.5A tr * td(off) * tf * - 25 - ns VGS=10V - 40 - ns RL=100 - 20 - ns RG=10 Total gate charge Qg * - 10.8 - nC VDD 250V Gate-source charge Gate-drain charge Qgs * Qgd * - 3.2 4.4 - nC nC ID=5.0A VGS=10V Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Unit V IS=5.0A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet R5005CNJ Electrical characteristic curves Fig.1 Typical Output Characteristics (Ⅰ) 0.4 VGS=5.0V 0.2 3 VGS=6.5V VGS=6.0V Ta=25℃ pulsed 2 VGS=5.5V VGS=5.0V 1 VGS=4.5V 0 0.2 0.4 0.6 0.8 2 0.1 0.01 4 6 8 0 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 6 3 2 1 0 0 50 100 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.001 150 Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 4 3 ID= 5.0A 2 ID= 2.5A 1 0 -50 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6 7 4 3 ID= 5.0A 2 ID= 2.5A 1 0.1 1 10 0 100 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) Fig.8 Forward Transfer Admittance vs. Drain Current FORWARD TRANSFER ADMITTANCE : |Yfs| (S) VGS= 10V Pulsed 5 Ta=25℃ pulsed DRAIN CURRENT : ID (A) CHANNEL TEMPERATURE: Tch (℃) 5 4 0 0.01 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 10 VDS= 10V Pulsed VGS= 0V Pulsed SOURCE CURRENT : IS (A) -50 3 5 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 4 2 Fig.6 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 VDS= 10V ID= 1mA 1 GATE-SOURCE VOLTAGE : VGS (V) Drain-Source Voltage : VDS [V] Fig.4 Gate Threshold Voltage vs. Channel Temperature 5 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.001 0 1 Drain-Source Voltage : VDS [V] GATE THRESHOLD VOLTAGE: VGS(th) (V) 1 VGS=4.5V 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 0.6 VDS= 10V Pulsed VGS=10V VGS=9.0V VGS=8.0V VGS=7.5V VGS=7.0V 4 Drain Current : ID [A] Drain Current : ID [A] 0.8 10 5 Ta=25℃ pulsed VGS=10.0V VGS=9.0V VGS=8.0V VGS=7.5V VGS=7.0V VGS=6.5V VGS=6.0V Fig.3 Typical Transfer Characteristics Fig.2 Typical Output Characteristics (Ⅱ) 1 1 0.1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.01 0.001 0.001 1 0.1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.01 0.001 0.01 0.1 1 DRAIN CURRENT : ID (A) 3/5 10 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 2011.10 - Rev.A Fig.11 Reverse Recovery Time vs.Source Current Fig.10 Typical Capacitance vs. Drain-Source Voltage 10000 Fig.12 Switching Characteristics 1000 1000 Ciss 100 Coss 10 Ta= 25℃ f= 1MHz VGS= 0V Crss 1 10000 SWITCHING TIME : t (ns) REVERSE RECOVERY TIME: trr (ns) CAPACITANCE : C (pF) Data Sheet R5005CNJ 100 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 0.1 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) 1000 td(off) 100 10 tr td(on) 1 10 0.01 Ta= 25℃ VDD= 250V VGS= 10V RG= 10Ω Pulsed tf 0.1 1 10 SOURCE CURRENT : IS (A) 100 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.13 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) 15 Ta= 25℃ VDD= 250V ID= 5A RG= 10Ω Pulsed 10 5 0 0 5 10 15 TOTAL GATE CHARGE : Qg (nC) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A Data Sheet R5005CNJ Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A