Data Sheet 10V Drive Nch MOSFET R6006AND Structure Silicon N-channel MOSFET Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 2.5 0.75 0.65 0.9 2.3 (1) (2) (3) 0.8Min. (1) Gate (2) Drain (3) Source 9.5 1.5 (SC-63) <SOT-428> 2.3 0.5 1.0 Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) R6006AND Inner circuit Taping TL 2500 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS ID *3 Drain current Source current (Body Diode) Continuous Pulsed Continuous IDP IS *1 Pulsed *3 ISP *1 Avalanche current Avalanche energy IAS EAS *2 Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *4 *2 ∗1 (1) Gate (2) Drain (3) Source Limits Unit 600 30 6 V V A 24 6 A A 24 3 2.4 A A mJ 40 150 55 to 150 W C C Limits 3.13 Unit C / W (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol Rth (ch-c) 1/5 2011.10 - Rev.A Data Sheet R6006AND Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Max. Unit - - 100 nA VGS=30V, VDS=0V 600 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions Typ. IDSS - - 100 A VDS=600V, VGS=0V VGS (th) 2.5 - 4.5 V VDS=10V, ID=1mA RDS (on)* - 0.9 1.2 ID=3A, VGS=10V l Yfs l* 1.7 - - S VDS=10V, ID=3A Input capacitance Ciss - 460 - pF VDS=25V Output capacitance Coss - 370 - pF VGS=0V Reverse transfer capacitance Crss - 24 - pF f=1MHz Turn-on delay time td(on) * - 22 - ns VDD 300V, ID=3A tr * - 36 - ns VGS=10V td(off) * tf * - 50 - ns RL=100 - 35 - ns RG=10 Qg * Qgs * Qgd * - 15 - nC VDD 300V - 4 7 - nC nC ID=6A VGS=10V Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Unit V IS=6A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet R6006AND Electrical characteristic curves Fig.2 Typical Output Characteristics (Ⅰ) Fig.1 Maximum Safe Operating Aera 1 PW =1ms 0.1 PW =10ms 0.01 Ta=25℃ pulsed 0.8 VGS=7.0V 0.7 VGS=6.5V 0.6 VGS=6.0V VGS=5.0V 0.5 1 10 100 0.4 0.3 VGS=4.5V 0.2 1000 2 VGS=5.0V 1 Ta=25℃ pulsed VGS=4.5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 4 5 6 7 8 9 Fig.5 Gate Threshold Voltage vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 0.01 0.001 1 2 3 4 5 6 7 5 VDS= 10V ID= 1mA 4 3 2 1 0 -50 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source 50 100 0.1 150 ID= 6.0A ID= 3.0A 0.5 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2.5 100 Fig.9 Forward Transfer Admittance vs. Drain Current 100 VGS= 10V Pulsed 2 ID= 6.0A 1.5 ID= 3.0A 1 0.5 0 -50 10 DRAIN CURRENT : ID (A) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 1.5 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2 1 0.1 0 3 Ta=25℃ pulsed VGS= 10V Pulsed CHANNEL TEMPERATURE: Tch (℃) 3 10 10 6 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) GATE THRESHOLD VOLTAGE: VGS(th) (V) 0.1 0 1 Fig.4 Typical Transfer Characteristics Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 Ta=25℃ pulsed Drain-Source Voltage : VDS [V] 10 2.5 VGS=6.5V Drain-Source Voltage : VDS [V] VDS= 10V Pulsed 0 4 VGS=6.0V DRAIN-SOURCE VOLTAGE : VDS ( V ) 100 1 VGS=8.0V 3 0 0.1 5 VGS=7.0V 0.1 0.001 DRAIN CURRENT : ID (A) VGS=8.0V Drain Current : ID [A] PW =100us Drain Current : ID [A] DRAIN CURRENT : ID (A) Operation in this area is limited by RDS(ON) 10 VGS=10.0V VGS=10.0V 0.9 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Fig.3 Typical Output Characteristics (Ⅱ) 6 1 100 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) 3/5 VDS= 10V Pulsed 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) 2011.10 - Rev.A Data Sheet R6006AND Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Fig.11 Typical Capacitance vs. Drain-Source Voltage 100 Fig.12 Dynamic Input Characteristics 10000 12 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 1000 Ciss 100 Coss 10 0.01 Crss Ta= 25℃ f= 1MHz VGS= 0V 0.5 1 1.5 10 8 Ta= 25℃ VDD= 300V ID= 6A Pulsed 6 4 2 0 1 0 0.01 SOURCE-DRAIN VOLTAGE : VSD (V) 0.1 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.13 Reverse Recovery Time vs.Source Current 0 1 2 3 4 5 6 7 8 9 1011121314151617 TOTAL GATE CHARGE : Qg (nC) Fig.14 Switching Characteristics 1000 10000 SWITCHING TIME : t (ns) REVERSE RECOVERY TIME: trr (ns) GATE-SOURCE VOLTAGE : VGS (V) CAPACITANCE : C (pF) SOURCE CURRENT : IS (A) VGS= 0V Pulsed 100 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 10 1000 Ta= 25℃ VDD= 300V VGS= 10V RG= 10Ω Pulsed tf td(off) 100 10 td(on) tr 1 0.1 1 10 100 0.01 SOURCE CURRENT : IS (A) 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 Ta = 25°C Single Pulse Rth(ch-a)(t) = R(t)×Rth(ch-a) Rth(ch-a) = 86.9°C/W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A Data Sheet R6006AND Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A