ROHM R6020ANZ

Data Sheet
10V Drive Nch MOSFET
R6020ANZ
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
5.5
TO-3PF
15.5
0.44
10.0
4.5
2.0 3.0
2.0
2.5
2.0
3.5
16.5
16.5
14.5
26.5
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
3.0
φ3.6
14.8
0.75
(1) Gate
(2) Drain
(3) Source
 Application
Switching
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
R6020ANZ
VDSS
Drain current
Continuous
VGSS
ID *3
Limits
Unit
600
30
V
V
20
A
Pulsed
Continuous
IDP
IS
*3
80
20
A
A
Pulsed
ISP
*1
80
A
Avalanche current
IAS
*2
Avalanche energy
EAS *2
PD *4
Tch
Tstg
10
26.7
120
A
mJ
W
150
55 to 150
C
C
Limits
1.04
Unit
C / W
Power dissipation
Channel temperature
Range of storage temperature
0.9
∗1
*1
Source current
(Body Diode)
(3)
5.45
 Inner circuit
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Gate-source voltage
(2)
5.45
Bulk
360

(1) Gate
(2) Drain
(3) Source
Drain-source voltage
(1)
(1)
(2)
(3)
1 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 L
500H, VDD=50V, RG=25, T ch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
 Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c) *
* T C=25°C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
Data Sheet
R6020ANZ
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
-
-
100
nA
VGS=30V, VDS=0V
600
-
-
V
ID=1mA, VGS=0V
IGSS
Drain-source breakdown voltage V(BR)DSS
Conditions
IDSS
-
-
100
A
VDS=600V, VGS=0V
VGS (th)
2.95
-
4.15
V
VDS=10V, ID=1mA
RDS (on)*
-
0.17
0.22

ID=10A, VGS=10V
l Yfs l *
7
-
-
S
VDS=10V, ID=10A
Input capacitance
Ciss
-
2040
-
pF
VDS=25V
Output capacitance
Coss
-
1660
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
70
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
40
-
ns
VDD 300V, ID=10A
tr *
-
60
-
ns
VGS=10V
Turn-off delay time
td(off) *
-
230
-
ns
RL=30
Fall time
tf *
Qg *
Qgs *
Qgd *
-
70
-
ns
RG=10
-
65
-
nC
VDD 300V
-
10
25
-
nC
nC
ID=20A
VGS=10V
Min.
Typ.
Max.
-
-
1.5
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Rise time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward voltage
Symbol
VSD *
Unit
Conditions
V
Is=20A, VGS=0V
*Pulsed
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.10 - Rev.A
Data Sheet
R6020ANZ
Electrical characteristic curves
Fig.1 Maximum Safe Operating Aera
100
Fig.3: Typical output characteristics(Ⅱ)
Fig.2: Typical output characteristics(Ⅰ)
40
PW =100us
VGS=10V
VGS=8.0V
20
VGS=6.5V
Ta= 25°C
Pulsed
PW =1ms
PW = 10ms
1
Operation in this
area is limited
by RDS(ON)
0.1
Ta = 25°C
Single Pulse
30
VGS=7.0V
25
Ta= 25°C
Pulsed
20
VGS=5.5V
15
10
VGS=5.0V
5
1
10
100
0
1000
10
GATE THRESHOLD VOLTAGE: VGS(th) (V)
VGS= 4.5V
10
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
1
2
3
4
5
6
20
30
40
0
50
5
4
3
2
1
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
50
100
150
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
0.3
ID=20A
0.2
ID=10A
0.1
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
0.4
0.1
10
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
100
0.5
0.4
5
0.1
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
Ta=25°C
Pulsed
4
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
1
0.01
0.001
0
0
VGS= 10V
Pulsed
CHANNEL TEMPERATURE: Tch (°C)
0.5
3
10
VDS= 10V
ID= 1mA
-50
7
2
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
6
GATE-SOURCE VOLTAGE : VGS (V)
0
1
DRAIN-SOURCE VOLTAGE: VDS (V)
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
DRAIN CURRENT : ID (A)
VDS= 10V
Pulsed
0
VGS=5.0V
5
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
Fig.4 Typical Transfer Characteristics
100
VGS=5.5V
VGS=6.0V
10
DRAIN-SOURCE VOLTAGE: VDS (V)
DRAIN-SOURCE VOLTAGE : VDS ( V )
1
VGS=7.0V
VGS=6.5V
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
0.1
15
VGS=10V
VGS=8.0V
VGS= 4.5V
0
0.01
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
VGS=6.0V
DRAIN CURRENT: ID (A)
10
DRAIN CURRENT: ID (A)
DRAIN CURRENT : ID (A)
35
VGS= 10V
Pulsed
0.3
ID= 20A
0.2
ID= 10A
0.1
0
-50
0
50
100
CHANNEL TEMPERATURE: Tch (°C)
3/5
150
VDS= 10V
Pulsed
10
1
0.1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.01
0.001
0.001
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
2011.10 - Rev.A
Data Sheet
R6020ANZ
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
100
Ciss
CAPACITANCE : C (pF)
SOURCE CURRENT : IS (A)
GATE-SOURCE VOLTAGE : VGS (V)
10
VGS= 0V
Pulsed
10
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
1
0.1
1000
100
Coss
Crss
10
Ta= 25°C
f= 1MHz
VGS= 0V
0.01
1
0
0.5
1
5
Ta= 25°C
VDD= 300V
ID= 20A
RG= 10Ω
Pulsed
0
1.5
0.01
SOURCE-DRAIN VOLTAGE : VSD (V)
0.1
1
10
100
1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
0
10
20
30
40
50
60
70
TOTAL GATE CHARGE : Qg (nC)
Fig.14 Switching Characteristics
1000
10000
SWITCHING TIME : t (ns)
REVERSE RECOVERY TIME: trr (ns)
Fig.12 Dynamic Input Characteristics
10000
100
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
Pulsed
Ta= 25°C
VDD= 300V
VGS= 10V
RG= 10Ω
Pulsed
tf
1000
td(off)
100
10
td(on)
tr
1
10
0.1
1
10
0.01
100
REVERSE DRAIN CURRENT : IDR (A)
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
1
Ta = 25°C
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 27.3 °C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/5
2011.10 - Rev.A
Data Sheet
R6020ANZ
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
RG
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
VGS
IAS
VDS
V(BR)DSS
D.U.T.
RG
L
VDD
IAS
VDD
EAS =
Fig.3-1 Avalanche Measurement Circuit
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1
2
L IAS
2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
5/5
2011.10 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A