Data Sheet 10V Drive Nch MOSFET RCJ450N20 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 4.5 2.54 0.78 2.7 5.08 (1) (2) 0.4 1.2 3.0 1.0 1.24 (3) Application Switching Packaging specifications Package Code Basic ordering unit (pieces) RCJ450N20 Type Inner circuit Taping TL 1000 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS ∗1 (1) Gate (2) Drain (3) Source Limits Unit 200 30 V V 45 180 45 A A A Continuous Pulsed Continuous ID *3 IDP *1 IS *3 Pulsed ISP *1 180 A 22.5 160 A mJ Power dissipation IAS *2 EAS *2 PD *4 40 W Channel temperature Range of storage temperature Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c)* Limits 3.12 Unit C / W Drain current Source current (Body Diode) Avalanche current Avalanche energy (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Data Sheet RCJ450N20 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 100 nA VGS=30V, VDS=0V 200 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 1 A VDS=200V, VGS=0V VGS (th) 3.0 - 5.0 V VDS=10V, ID=1mA RDS (on)* - 42 55 l Yfs l* 17.0 - - S VDS=10V, ID=22.5A Input capacitance Ciss - 4200 - pF VDS=25V Output capacitance Coss - 270 - pF VGS=0V Reverse transfer capacitance Crss - 160 - pF f=1MHz Turn-on delay time td(on) * tr * - 52 - ns VDD 100V, ID=22.5A - 210 - ns VGS=10V td(off) * tf * - 90 - ns RL=4.4 - 70 - ns RG=10 Qg * Qgs * Qgd * - 80 - nC VDD 100V, ID=45A - 28 28 - nC nC VGS=10V Min. Typ. Max. - - 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge m ID=22.5A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit Conditions V Is=45A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet RCJ450N20 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 45 20 Ta=25°C pulsed VGS=10.0V VGS=8.0V VGS=7.0V 35 Drain Current : ID [A] Drain Current : ID [A] 15 10 VGS=6.5V 5 30 25 VGS=7.0V 20 15 VGS=6.0V 10 VGS=5.5V 5 0 VGS=5.5V VGS=6.0V 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.4 Gate Threshold Voltage vs. Channel Temperature Fig.3 Typical Transfer Characteristics 100 10 VDS=10V ID=1mA pulsed VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 10 Drain Currnt : ID [A] VGS=6.5V 0 0 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 8 6 4 2 0 0.001 0 2 4 6 8 -50 10 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Gate-Source Voltage : VGS [V] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 120 1000 VGS=10V pulsed VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mW] Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C pulsed VGS=10.0V 40 VGS=8.0V 100 10 1 0.01 100 ID=45A 80 ID=22A 60 40 20 0 0.1 1 10 100 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] 3/6 2011.10 - Rev.A Data Sheet RCJ450N20 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 100 100 VDS=10V pulsed VGS=0V pulsed 10 Source Current : IS [A] Forward Transfer Admittance Yfs [S] 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.001 0.001 0.01 0.01 0.1 1 10 100 0 0.5 Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1.5 2 Fig.10 Switching Characteristics 100000 200 VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed Ta=25°C pulsed 180 ID=22.5A 160 10000 140 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [mW] 1 Source-Drain Voltage : VSD [V] Drain Current : ID [A] ID=45.0A 120 100 80 tf td(off) 1000 tr 60 100 40 20 td(on) 10 0 0 2 4 6 8 10 12 14 16 18 0.01 20 0.1 1 10 Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 20 10000 Ta=25°C VDD=100V ID=45A Pulsed Ciss Capacitance : C [pF] 15 Gate-Source Voltage : VGS [V] 100 Drain Current : ID [A] Gate-Source Voltage : VGS [V] 10 1000 Coss 100 Crss 5 Ta=25°C f=1MHz VGS=0V 10 0 0 50 100 150 0.01 200 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 4/6 2011.10 - Rev.A Data Sheet RCJ450N20 Fig.14 Maximum Safe Operating Area Fig.13 Reverse Recovery Time vs. Source Current 1000 1000 100 Drain Current : ID [ A ] Reverse Recovery Time : trr [ns] Ta=25°C Vgs=0V di/dt=100A/us Pulsed 100 10 PW = 100μs Operation in this area is limited by RDS(on) (VGS = 10V) 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse 0.01 10 0 1 10 0.1 100 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Source Current : IS [A] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse 1 0.1 0.01 0.001 Rth(ch-a)=34.1°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A Data Sheet RCJ450N20 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A