Corel Ventura

Diode Protected P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier/Switch
LLC
3N172 / 3N173
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
• High Input Impedance
• Diode Protected Gate
Drain-Source or Drain-Gate Voltage
3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC
PIN CONFIGURATION
TO-72
S
C,B
1503Z
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
G
D
ORDERING INFORMATION
DEVICE SCHEMATIC
1
Part
Package
Temperature Range
3N172-73
X3N172-73
Hermetic TO-72
Sorted Chips in Carriers
-55oC to +150oC
-55oC to +150oC
2
3
4
0200
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
IGSS
PARAMETER
3N172
MIN
Gate Reverse Current
3N173
MAX
MIN
MAX
UNITS
-200
-500
pA
-0.5
-1.0
µA
BVGSS
Gate Breakdown Voltage
-40
-125
-30
BVDSS
Drain-Source Breakdown Voltage
-40
-30
BVSDS
Source-Drain Breakdown Voltage
-40
-30
VGS(th)
Threshold Voltage
VGS
Gate Source Voltage
-125
TEST CONDITIONS
VGS = -20V
TA = +125oC
ID = -10µA
ID = -10µA
V
IS = -10µA, VDB = 0
-2.0
-5.0
-2.0
-5.0
VDS = VGS, I D = -10µA
-2.0
-5.0
-2.0
-5.0
VDS = -15V, ID = -10µA
-3.0
-6.5
-2.5
-6.5
VDS = -15V, ID = -500µA
IDSS
Zero Gate Voltage Drain Current
-0.4
-10
ISDS
Zero Gate Voltage Source Current
-0.4
-10
rDS(on)
Drain Source On Resistance
ID(on)
On Drain Current
250
-5.0
-30
-5.0
nA
VDS = -15V, VGS = 0
VSD = -15V, VDB = 0, VGD = 0
350
ohms
VGS = -20V, ID = -100µA
-30
mA
V DS = -15V, VGS = -10V
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS020 REV A
3N172 / 3N173
LLC
SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connected to Source
SYMBOL
3N172
3N173
MIN MAX MIN MAX
UNITS
1500 4000 1000 4000
µS
VDS = -15V, ID = -10mA, f = 1kHz
PARAMETER
TEST CONDITIONS
| yfs |
Magnitude of Small-Signal, Common-Source,
Short-Circuit, Forward Transadmittance*
| yos |
Magnitude of Small-Signal, Common-Source,
Short-Circuit, Output Admittance*
250
250
µS
VDS = -15V, ID = -10mA, f = 1kHz
Ciss
Small-Signal, Common-Source, Short-Circuit,
Input Capacitance*
3.5
3.5
pF
VDS = -15V, ID = -10mA, f = 1MHz
Crss
Small-Signal, Common-Source, Short-Circuit,
Reverse Transfer Capacitance*
1.0
1.0
pF
VDS = -15V, ID = -10mA, f = 1MHz
Coss
Small-Signal, Common-Source, Short-Circuit,
Output Capacitance*
3.0
3.0
pF
VDS = -15V, ID = -10mA, f = 1MHz
NOISE CHARACTERISTICS
SYMBOL
NF
PARAMETER
TYPICAL
UNITS
1.0
dB
Common-Source Spot Noise Figure
TEST CONDITIONS
VDS = -15V, ID = -1mA, f = 1kHz, RG = 1MΩ
o
SWITCHING CHARACTERISTICS TA = 25 C Bulk (substrate) Lead Connected to Source
SYMBOL
3N172
PARAMETER
MIN
td (on)
Turn-On Delay Time*
3N173
MAX
MIN
12
UNITS
TEST CONDITIONS
MAX
12
tr
Rise Time*
24
24
toff
Turn-Off Delay Time*
50
50
VDD = -15V, ID (on) = -10mA
ns
RG = RL = 1.4kΩ
See Test Circuit Below
*Registered JEDEC Data
SWITCHING TIME DETAIL
VDD
RL
MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH
VOUT
RG
t rise < 0.2ns
Cin < 2.0pF
Rin > 10MΩ
VIN
D.U.T.
50Ω
INPUT PULSE
0220
t rise < 2ns
PULSE WIDTH > 200ns
SWITCHING TIMES vs. ON-STATE
DRAIN CURRENT
PULSE
WIDTH
1000
-0V
500
10%
50%
50%
90%
VDD = 15V
SWITCHING TIS - nSEC
VIN
-VIN
tr
t off
t 4(on)
-1V
10%
VOUT
90%
90%
-15V
RG = R L = 1.4K
100
t off
50
t rise
10
t d(on)
5.0
0210
1.0
-0.1
-0.5
-1.0
-5.0
-10
ON-STATE DRAIN CURRENT - (I D(on) ) - mA
0230
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS020 REV A