Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC PIN CONFIGURATION TO-72 S C,B 1503Z NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. G D ORDERING INFORMATION DEVICE SCHEMATIC 1 Part Package Temperature Range 3N172-73 X3N172-73 Hermetic TO-72 Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC 2 3 4 0200 ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL IGSS PARAMETER 3N172 MIN Gate Reverse Current 3N173 MAX MIN MAX UNITS -200 -500 pA -0.5 -1.0 µA BVGSS Gate Breakdown Voltage -40 -125 -30 BVDSS Drain-Source Breakdown Voltage -40 -30 BVSDS Source-Drain Breakdown Voltage -40 -30 VGS(th) Threshold Voltage VGS Gate Source Voltage -125 TEST CONDITIONS VGS = -20V TA = +125oC ID = -10µA ID = -10µA V IS = -10µA, VDB = 0 -2.0 -5.0 -2.0 -5.0 VDS = VGS, I D = -10µA -2.0 -5.0 -2.0 -5.0 VDS = -15V, ID = -10µA -3.0 -6.5 -2.5 -6.5 VDS = -15V, ID = -500µA IDSS Zero Gate Voltage Drain Current -0.4 -10 ISDS Zero Gate Voltage Source Current -0.4 -10 rDS(on) Drain Source On Resistance ID(on) On Drain Current 250 -5.0 -30 -5.0 nA VDS = -15V, VGS = 0 VSD = -15V, VDB = 0, VGD = 0 350 ohms VGS = -20V, ID = -100µA -30 mA V DS = -15V, VGS = -10V CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS020 REV A 3N172 / 3N173 LLC SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connected to Source SYMBOL 3N172 3N173 MIN MAX MIN MAX UNITS 1500 4000 1000 4000 µS VDS = -15V, ID = -10mA, f = 1kHz PARAMETER TEST CONDITIONS | yfs | Magnitude of Small-Signal, Common-Source, Short-Circuit, Forward Transadmittance* | yos | Magnitude of Small-Signal, Common-Source, Short-Circuit, Output Admittance* 250 250 µS VDS = -15V, ID = -10mA, f = 1kHz Ciss Small-Signal, Common-Source, Short-Circuit, Input Capacitance* 3.5 3.5 pF VDS = -15V, ID = -10mA, f = 1MHz Crss Small-Signal, Common-Source, Short-Circuit, Reverse Transfer Capacitance* 1.0 1.0 pF VDS = -15V, ID = -10mA, f = 1MHz Coss Small-Signal, Common-Source, Short-Circuit, Output Capacitance* 3.0 3.0 pF VDS = -15V, ID = -10mA, f = 1MHz NOISE CHARACTERISTICS SYMBOL NF PARAMETER TYPICAL UNITS 1.0 dB Common-Source Spot Noise Figure TEST CONDITIONS VDS = -15V, ID = -1mA, f = 1kHz, RG = 1MΩ o SWITCHING CHARACTERISTICS TA = 25 C Bulk (substrate) Lead Connected to Source SYMBOL 3N172 PARAMETER MIN td (on) Turn-On Delay Time* 3N173 MAX MIN 12 UNITS TEST CONDITIONS MAX 12 tr Rise Time* 24 24 toff Turn-Off Delay Time* 50 50 VDD = -15V, ID (on) = -10mA ns RG = RL = 1.4kΩ See Test Circuit Below *Registered JEDEC Data SWITCHING TIME DETAIL VDD RL MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH VOUT RG t rise < 0.2ns Cin < 2.0pF Rin > 10MΩ VIN D.U.T. 50Ω INPUT PULSE 0220 t rise < 2ns PULSE WIDTH > 200ns SWITCHING TIMES vs. ON-STATE DRAIN CURRENT PULSE WIDTH 1000 -0V 500 10% 50% 50% 90% VDD = 15V SWITCHING TIS - nSEC VIN -VIN tr t off t 4(on) -1V 10% VOUT 90% 90% -15V RG = R L = 1.4K 100 t off 50 t rise 10 t d(on) 5.0 0210 1.0 -0.1 -0.5 -1.0 -5.0 -10 ON-STATE DRAIN CURRENT - (I D(on) ) - mA 0230 CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS020 REV A