3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C G1 Operating Junction Temperature -55 to +135 °C S1 Maximum Power Dissipation Continuous Power Dissipation One Side 300mW Continuous Power Dissipation Both Sides 525mW D1 4 3 G2 5 2 S2 6 1 7 D2 Maximum Current Drain to Source2 50mA Maximum Voltages Drain to Gate2 30V 2 Drain to Source 30V Transient Gate to Source2,3 ±125V Gate to Gate ±80V MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated) SYMBOL gfs1 gfs2 VGS1-2 ∆VGS1 − 2 ∆T ∆VGS1 − 2 ∆T CHARACTERISTIC MIN Forward Transconductance Ratio Gate to Source Threshold Voltage Differential Gate to Source Threshold Voltage 4 Differential with Temperature 0.85 TYP MAX UNITS 1.0 100 VDS = -15V, ID = -500µA, f = 1kHz mV 100 µV °C Gate to Source Threshold Voltage Differential with Temperature4 CONDITIONS 100 VDS = -15V, ID = -500µA VDS = -15V, ID = -500µA TS = -55 TO +25 °C VDS = -15V, ID = -500µA TS = +25 TO +125 °C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVDSS Drain to Source Breakdown Voltage -40 BVSDS Source to Drain Breakdown Voltage -40 Gate to Source Voltage -3.0 -6.5 -2.0 -5.0 VDS = VGS, ID = -10µA -2.0 -5.0 VDS = -15V, ID = -500µA VGS TYP MAX UNITS ID = -10µA IS = -10µA, VBD = 0V VGS(th) Gate to Source Threshold Voltage IGSSR Reverse Gate Leakage Current IGSSF Forward Gate Leakage Current -10 IDSS Drain Leakage Current "Off" -200 ISDS Source to Drain Leakage Current "Off" Drain Current "On" Linear Integrated Systems V 10 ID(on) -30.0 VDS = -15V, ID = -500µA VGS = 40V pA -400 -5.0 CONDITIONS VGS = -40V VDS = -15V VSD = -15V, VDB = 0V mA VDS = -15V, VGS = -10V • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN gfs Forward Transconductance5 1500 Yos Output Admittance 300 Drain to Source "On" Resistance 300 Crss Reverse Transfer Capacitance 1.0 Ciss Input Capacitance Output Shorted 4.5 Coss Output Capacitance Input Shorted 3.0 rds(on) TYP MAX UNITS 4000 CONDITIONS µS VDS = -15V, ID = -5mA, f = 1kHz Ω VDS = -20V, ID = -100µA pF VDS = -15V, ID = -5mA, f = 1MHz SWITCHING CHARACTERISTICS SYMBOL CHARACTERISTIC MIN TYP MAX UNITS td(on) Turn On Delay Time 15 tr Turn On Rise Time 30 toff Turn Off Time 50 ns CONDITIONS VDD = -15V, ID(on) = -5mA, RG = RL = 1.4kΩ TO-78 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 0.016 0.019 DIM. A MIN. 0.500 0.016 0.021 DIM. B SEATING PLANE 0.200 0.100 0.029 0.045 2 3 4 1 5 8 76 0.100 45° 0.028 0.034 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Per transistor. 3. Approximately doubles for every 10 °C increase in TA. 4. Pulse: t = 300µs, Duty Cycle ≤ 3% 5. Measured at end points, TA and TB. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261