ROHM R6020ANJ

10V Drive Nch MOSFET
R6020ANJ
zDimensions (Unit : mm)
zStructure
Silicon N-channel MOSFET
LPTS
10.1
1.3
13.1
9.0
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
4.5
2.54
0.4
0.78
2.7
5.08
(1) Base (Gate)
(1)
(2)
1.2
3.0
1.0
1.24
(3)
(2) Collector (Drain)
zApplications
Switching
(3) Emitter (Source)
Each lead has same dimensions
LPTL
8.9
4.8
zPackaging specifications
<LPTS>
Package
Type
Taping
TL
Code
1000
Basic ordering unit (pieces)
R6020ANJ
(1) Base (Gate)
(2) Collector (Drain)
(2)
(3)
Each lead has same dimensions
(3) Emitter (Source)
<LPTL>
Package
Type
(1)
Taping
Code
TLL
Basic ordering unit (pieces)
1000
R6020ANJ
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VDSS
600
V
Drain-source voltage
Gate-source voltage
Source current
(Body Diode)
±30
V
∗3
±20
A
∗1
±80
A
20
A
∗1
80
A
10
A
26.7
mJ
100
W
VGSS
Continuous
Drain current
zInner circuit
ID
Pulsed
IDP
Continuous
IS
Pulsed
ISP
∗3
Avalanche Current
IAS
∗2
Avalanche Energy
EAS
∗2
Total power dissipation (Tc=25°C)
PD
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
zThermal resistance
Parameter
Channel to case
Symbol
Limits
Unit
Rth(ch-c)
1.25
°C/W
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/5
2009.06 - Rev.A
R6020ANJ
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±100
nA
VGS=±30V, VDS=0V
V(BR)DSS
600
−
−
V
ID=1mA, VGS=0V
IDSS
−
−
100
µA
VDS=600V, VGS=0V
Gate threshold voltage
VGS(th)
2.5
−
4.5
V
VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on) ∗
−
0.19
0.25
Ω
ID=10A, VGS=10V
Forward transfer admittance
| Yfs |
7
−
−
S
ID=10A, VDS=10V
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
∗
Conditions
Input capacitance
Ciss
−
2040
−
pF
VDS=25V
Output capacitance
Coss
−
1660
−
pF
VGS=0V
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
tr
Rise time
Turn-off delay time
td(off)
tf
Fall time
Qg
Total gate charge
Gate-source charge
Qgs
Gate-drain charge
Qgd
−
70
−
pF
f=1MHz
∗
−
40
−
ns
ID=10A, VDD 300V
∗
−
60
−
ns
VGS=10V
∗
−
230
−
ns
RL=30Ω
∗
−
70
−
ns
RG=10Ω
∗
−
65
−
nC
∗
−
10
−
nC
∗
−
25
−
nC
VDD 300V
ID=20A
VGS=10V
RL=15Ω / RG=10Ω
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
1.5
Unit
V
Conditions
IS=10A, VGS=0V
∗ Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/5
2009.06 - Rev.A
R6020ANJ
Data Sheet
100
Operation in this
area is limited
by RDS(ON)
1
Pw=100u
Pw=1m
0.1
PW=10m
Tc = 25°C
Single Pulse
0.01
0.1
VDS= 10V
Pulsed
10
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1
0.1
0.01
DC operation
1
10
100
0.001
0.0
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) ( )
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.01
10
0.6
0.4
ID= 10.0A
ID= 20.0A
0.2
0
0
100
5
10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate Source
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.1
1
10
3
2
1
0
-50
100
100
150
VGS= 10V
Pulsed
0.4
ID= 20.0A
0.3
0.2
ID= 10.0A
0.1
0
-50
0
50
100
150
CHANNEL TEMPERATURE: Tch(°C)
100000
10
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
10000
Ciss
1000
100
10
1
0.01
1
1.5
SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.8 Reverse Drain Current vs.
Sourse-Drain Voltage
3/5
Coss
Crss
Ta= 25°C
f= 1MHz
VGS= 0V
0.01
0.5
DRAIN CURRENT : ID(A)
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100
Resistance vs. Channel Temperature
Fig.7 Forward Transfer Admittance
vs. Drain Current
c 2009 ROHM Co., Ltd. All rights reserved.
○
50
Fig.6 Static Drain-Source On-State
VGS= 0V
Pulsed
0
0
Fig.3 Gate Threshold Voltage
vs. Channel Temperature
15
DRAIN CURRENT : ID(A)
0.01
0.01
4
0.5
Ta=25°C
Pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
0.1
VDS= 10V
ID= 1mA
CHANNEL TEMPERATURE: Tch (°C)
CAPACITANCE : C (pF)
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
1
REVERSE DRAIN CURRENT : IDR (A)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) ( )
1
100
6.0
0.8
VGS= 10V
Pulsed
0.1
4.5
5
Fig.2 Typical Transfer Characteristics
Fig.1 Maximum Safe Operating Aera
0.001
0.01
3.0
6
GATE-SOURCE VOLTAGE : VGS(V)
DRAIN-SOURCE VOLTAGE : VDS( V )
10
1.5
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) ( )
10
DRAIN CURRENT : ID(A)
DRAIN CURRENT : ID(A)
100
GATE THRESHOLD VOLTAGE: VGS(th) (V)
zElectrical characteristics curves
0.1
1
10
100 1000 1000
0
DRAIN-SOURCE VOLTAGE : VDS(V)
Fig.9 Typical Capacitance vs.
Drain-Source Voltage
2009.06 - Rev.A
Data Sheet
5
Ta= 25°C
VDD= 300V
ID= 20A
RG= 10
Pulsed
0
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
0
10
1
10
20
30
40
50
1000
10000
tf
SWITCHING TIME : t (ns)
10
REVERSE RECOVERY TIME: trr (ns)
GATE-SOURCE VOLTAGE : VGS (V)
R6020ANJ
100
Ta= 25°C
di / dt= 100A / µs
VGS= 0V
Pulsed
10
0.1
60
1
10
1000
Ta= 25°C RG= 10Ω
VGS= 10V Pulsed
VDD= 300V
td(off)
100
td(on)
10
tr
1
0.01
100
0.1
1
10
TOTAL GATE CHARGE : Qg (nC)
REVERSE DRAIN CURRENT : IDR (A)
DRAIN CURRENT : ID (A)
Fig.10 Dynamic Input Characteristics
Fig.11 Reverse Recovery Time
vs.Reverse Drain Current
Fig.12 Switching Characteristics
100
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t)= r
(t)×Rth(ch-a)
Rth(ch-a)= 62.5°C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width
zMeasurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2 Switching waveforms
Fig.1-1 Switching time measurement circuit
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG(Const.)
RG
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate charge measurement circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Fig.2-2 Gate charge waveform
4/5
2009.06 - Rev.A
R6020ANJ
VGS
Data Sheet
IAS
VDS
VD(BR)DSS
D.U.T.
L
IAS
RG
VDD
EAS =
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2
L IAS
VD(BR)DSS
VD(BR)DSS - VDD
Fig.3-2 Avalanche waveform
Fig.3-1 Avalanche Measurement circuit
c 2009 ROHM Co., Ltd. All rights reserved.
○
1
2
5/5
2009.06 - Rev.A
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R0039A