1.５V Drive Nch MOSFET TT8K1 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSST8 Features 1) Low On-resistance. 2) High power package. 3) 1.5V drive. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K01 Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) TT8K1 Taping TR 3000 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta = 25C) <It is the same ratings for the Tr1 and Tr2.> Parameter Drain-source voltage Drain current Source current (Body Diode) Symbol Limits Unit VDSS 20 V V VGSS 10 Continuous ID 2.5 A Pulsed Continuous IDP Is *1 10 0.8 A A Pulsed Isp *1 10 A PD *2 1.25 1.0 150 55 to +150 W / TOTAL W / ELEMENT C C Gate-source voltage Power dissipation Channel temperature Range of storage temperature (7) (8) Tch Tstg ∗2 (6) (5) ∗2 ∗1 (1) ∗1 (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Symbol * Rth (ch-a) Limits Unit 100 125 °C / W /TOTAL °C / W /ELEMENT *Mounted on a ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.A TT8K1 Data Sheet Electrical characteristics (Ta = 25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=10V, VDS=0V Gate-source leakage Drain-source breakdown voltage V (BR)DSS 20 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1 V VDS=10V, ID=1mA - 52 72 - 65 90 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Conditions * RDS (on) ID=2.5A, VGS=4.5V m ID=2.5A, VGS=2.5V - 85 120 - 100 140 l Yfs l* 2.7 - - S ID=2.5A, VDS=10V Input capacitance Ciss - 260 - pF VDS=10V Output capacitance Coss - 65 - pF VGS=0V Reverse transfer capacitance Crss * - 35 - pF f=1MHz Turn-on delay time td(on) * - 9 - ns ID=1.2A, VDD 10V tr * - 17 - ns VGS=4.5V td(off) * - 28 - ns RL 8.3 tf * - 17 - ns RG=10 Total gate charge Qg * - 3.6 - nC ID=2.5A, VDD 10V Gate-source charge Gate-drain charge Qgs * Qgd * - 0.7 0.6 - nC nC VGS=4.5V RL 4 RG=10 Forward transfer admittance Rise time Turn-off delay time Fall time ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. VSD - - 1.2 Forward Voltage Unit Conditions V Is=2.5A, VGS=0V *Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.07- Rev.A Data Sheet TT8K1 Electrical characteristic curves 3 VGS= 2.5V VGS= 2.0V VGS= 1.8V VGS= 1.5V 2 VGS= 1.2V 1 10 4 VGS= 4.5V VGS= 2.5V VGS= 1.8V 3 VGS= 1.5V 2 VGS= 1.2V 1 0.6 0.8 1 0.001 0 Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 100 10 0.01 0.1 1 1000 2 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0.5 1.5 2 Fig.3 Typical Transfer Characteristics VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 10 0.1 1 10 1000 VGS= 2.5V Pulsed VGS= 1.5V Pulsed 10 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 10 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 3/5 0.1 1 10 DRAIN-CURRENT : ID[A] 100 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 1000 1 Fig.2 Typical Output Characteristics( Ⅱ) 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 1 0 10 DRAIN-CURRENT : ID[A] Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.1 8 100 10 100 0.01 6 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A] VGS= 1.8V Pulsed 4 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.4 Fig.1 Typical Output Characteristics( Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.2 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1 0 0 VDS= 10V Pulsed VGS= 1.0V VGS= 1.0V 0 Ta=25°C Pulsed DRAIN CURRENT : ID[A] VGS= 4.5V 4 5 Ta=25°C Pulsed DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 5 10 VDS= 10V Pulsed 1 Ta=25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.07 - Rev.A Data Sheet VGS=0V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.1 0.01 0 0.5 1 200 ID= 2.5A 150 ID= 1.25A 100 50 1.5 100 td(off) td(on) 10 1 0 5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 5 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed tf t 0 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.12 Switching Characteristics 1000 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : VGS [V] 1000 Ta=25°C Pulsed SWITCHING TIME : t [ns] SOURCE CURRENT : Is [A] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] TT8K1 4 3 2 Ta=25°C VDD=10V ID=2.5A RG=10Ω Pulsed 1 0 0 1 2 3 4 Ciss 100 Crss Coss 10 5 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 4/5 2010.07 - Rev.A TT8K1 Data Sheet Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching time measurement circuit 90% td(off) tr tf toff Fig.1-2 Switching waveforms VG VGS ID VDS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.07- Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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