1.5V Drive Pch MOSFET RT1A050ZP zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSST8 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : YH zApplications Switching Each lead has same dimensions zPackaging specifications zEquivalent circuit Package Type (8) Taping (8) (7) (6) (5) TR Code Basic ordering unit(piecies) 3000 ∗2 RT1A050ZP ∗1 (1) (2) (3) *1 ESD PROTECTION DIODE *2 BODY DIODE (4) (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temerature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg Limits −12 ±10 ±5 ±20 −1 −20 1.25 150 −55 to +150 Unit V V A A A A W °C °C ∗2 ∗1 Pw 10µs, Duty cycle 1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) ∗ 100 °C / W ∗ When mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.01 - Rev.A RT1A050ZP Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −12 Zero gete voltage drain current IDSS − Gate threshold voltage VGS (th) −0.3 − − Static drain-source on-state RDS (on)∗ resistance − − 7 Yfs ∗ Forward transfer admittance Input capacitance Ciss − Coss Output capacitance − Reverse transfer capacitance Crss − − Turn-on delay time td (on) ∗ tr ∗ Rise time − Turn-off delay time − td (off) ∗ tf ∗ − Fall time Qg ∗ Total gate charge − − Gate-source charge Qgs ∗ Qgd ∗ Gate-drain charge − Typ. − − − − 19 26 34 48 − 2800 340 310 12 95 410 220 34 6.0 5.0 Max. ±10 − −1 −1.0 26 36 50 96 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −5A, VGS= −4.5V ID= −2.5A, VGS= −2.5V ID= −2.5A, VGS= −1.8V ID= −1A, VGS= −1.5V VDS= −6V, ID= −5A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −2.5A VGS= −4.5V RL 2.4Ω RG=10Ω VDD −6V RL 1.2Ω RG=10Ω ID= −5A VGS= −4.5V ∗Pulsed zBody diode characteristics (Source -drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Conditions IS= −5A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.01 - Rev.A RT1A050ZP Data Sheet zElectrical characteristic curves 10 Ta=25°C Pulsed 2 1 VGS= -1.2V VGS= -10V VGS= -1.8V VGS= -1.5V 7 6 5 4 3 2 VGS= -1.2V 1 0 0 0 0.2 0.4 0.6 0.8 2 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 1 0.1 1 6 8 10 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics 1000 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 1 0.1 1 10 VGS= -2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 1 0.1 1 10 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= -1.8V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 4 100 10 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 1 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.1 Fig.2 Typical Output Characteristics(Ⅱ) DRAIN-SOURCE VOLTAGE : -VDS[V] Ta=25°C Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.001 0 1 Fig.1 Typical Output Characteristics(Ⅰ) 1000 VDS= -6V Pulsed 1 DRAIN CURRENT : -ID[A] VGS= -10V VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 3 8 DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 4 10 Ta=25°C Pulsed 9 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 5 VGS= -1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 3/5 100 VDS= -6V Pulsed 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.01 - Rev.A RT1A050ZP 100 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 80 70 ID= -2.5A 60 ID= -5.0A 50 40 30 td(off) 10 1.2 2 4 6 8 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25°C VDD= -6V VGS=-4.5V RG=10Ω 100 10 td(on) tr 1 0 5 tf 1000 20 SOURCE-DRAIN VOLTAGE : -VSD [V] 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.12 Switching Characteristics 10000 4 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] 10000 Ta=25°C Pulsed 90 SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 100 Data Sheet 3 2 Ta=25°C VDD= -6V ID= -5.0A RG=10Ω Pulsed 1 0 Ciss 1000 Crss Coss 100 Ta=25°C f=1MHz VGS=0V 10 0 5 10 15 20 25 30 35 40 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 4/5 2009.01 - Rev.A RT1A050ZP Data Sheet zMeasurement circuits Pulse Width ID VGS VDS VGS 10% 50% 90% RL D.U.T. 10% VDD RG 50% VDS 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS Qg RL VGS D.U.T. IG(Const.) RG Qgs Qgd VDD Charge FIg.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 2009.01 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.0