1.5V Drive Pch MOSFET RZF030P01 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) Gate (2) Source Abbreviated symbol : YD (3) Drain zApplications Switching zEquivalent circuit zPackaging specifications Package Type Taping (3) TL Code Basic ordering unit (pieces) 3000 RZF030P01 ∗2 (1) ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ∗1 ISP PD ∗2 Tch Tstg Limits −12 ±10 ±3 ±12 −0.65 −12 0.8 150 −55 to +150 Unit V V A A A A W °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 156 °C / W ∗ Mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.01 - Rev.A RZF030P01 Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − − Static drain-source on-state ∗ RDS (on) resistance − − 5 Forward transfer admittance Yfs ∗ Input capacitance − Ciss Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 28 39 51 72 − 1860 210 200 9 40 210 120 18 3.0 2.5 ±10 − −1 −1.0 39 54 76 144 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −3A, VGS= −4.5V ID= −1.5A, VGS= −2.5V ID= −1.5A, VGS= −1.8V ID= −0.6A, VGS= −1.5V VDS= −6V, ID= −3A VDS= −6V VGS=0V f=1MHz ID= −1.5A VDD −6V VGS= −4.5V RL 4Ω RG=10Ω VDD −6V RL 2Ω ID= −3A RG=10Ω VGS= −4.5V ∗Pulsed zBody diode characteristics (Source -drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD ∗ − − −1.2 V Conditions IS= −3A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.01 - Rev.A RZF030P01 Data Sheet zElectrical characteristic curves 10 VGS= - 10V Ta=25℃ pulsed VGS= - 1.6V VGS= - 1.8V 5 VGS= - 1.4V VGS= - 1.2V VGS= - 4.5V VGS= - 1.8V VGS= - 1.6V 5 VGS= - 1.4V VGS= - 1.2V VGS= - 1.0V 0 0.0 2.0 4.0 6.0 8.0 10.0 0.2 0.4 0.6 0.8 1.0 VDS= - 6V pulsed 1 Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=-25℃ 0.01 0.001 0.0 0.5 1.0 1.5 DRAIN-SOURCE VOLTAGE : -VDS [V] DRAIN-SOURCE VOLTAGE : -VDS [V] GATE-SOURCE VOLTAGE: - VGS [V] Fig.1 Typical Output Characteristics (Ι) Fig.2 Typical Output Characteristics (Ⅱ) Fig.3 Typical Transfer Characteristics Ta=25℃ pulsed 200 ID= - 1.5A 150 ID= - 3.0A 100 50 STATIC DRAIN-SOURCE ONSTATE RESISTANCE: RDS(on) [mΩ] VGS= - 1.5V VGS= - 1.8V VGS= - 2.5V VGS= - 4.5V 100 1000 250 Ta=25℃ pulsed STATIC DRAIN-SOURCE ONSTATE RESISTANCE : RDS(on) [mΩ] 0 10 0.01 0.1 1 DRAIN CURRENT : - ID [A] 10 0.01 STATIC DRAIN-SOURCE ONSTATE RESISTANCE : RDS(on) [mΩ] Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 1 4 6 8 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 10 0.01 10 10 DRAIN CURRENT : - ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ VGS= - 1.8V pulsed 1000 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 10 0.01 0.1 1 10 DRAIN CURRENT : - ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current 3/5 0.1 1 DRAIN CURRENT : - ID [A] 10 Fig.6 Static Drain-Source On-State Resistance vs.Drain Current Fig.5 Static Drain-Source On-State Resistance vs.Gate-Source Voltage 1000 VGS= - 2.5V pulsed 100 2 VGS= - 4.5V pulsed GATE-SOURCE CURRENT : -VGS [V] Fig.4 Static Drain-Source On-State Resistance vs.Drain Current 1000 0 10 STATIC DRAIN-SOURCE ONSTATE RESISTANCE : RDS(on) [mΩ] STATIC DRAIN-SOURCE ONSTATE RESISTANCE : RDS(on) [mΩ] VGS= -1.0V 0 0.0 1000 STATIC DRAIN-SOURCE ONSTATE RESISTANCE : RDS(on) [mΩ] 10 Ta=25℃ pulsed VGS= - 2.4V DRAIN CURRENT: - ID [A] VGS= - 10V VGS= - 4.5V DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 10 VGS= - 1.5V pulsed Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 10 0.01 0.1 1 10 DRAIN CURRENT : - ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current 2009.01 - Rev.A RZF030P01 1 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 0.01 0.0 0.5 1.0 td(off) 100 td(on) 10 tr 1 0.01 0.1 1 1 10 DRAIN CURRENT : -ID [A] Fig.13 Switching Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Coss Crss 100 Ta=25℃ f=1MHz VGS=0V 0.01 10 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS [V] DRAIN CURRENT : - ID [A] GATE-SOURCE VOLTAGE : -VGS [V] SWITCHING TIME : t [ns] tf Ta=25℃ VDD=-6V VGS= - 4.5V RG=10Ω Pulsed 1000 10 0.1 Fig.12 Typical Capacitance vs. Drain-Source Voltage Fig.11 Forward Transfer Admittance vs. Drain Current Fig.10 Source Current vs. Source-Drain Voltage 1000 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 1 SOURCE DRAIN VOLTAGE : - VSD [V] 10000 Ciss 10 0.1 0.01 1.5 10000 VDS= - 6V pulsed CAPASITANCE : C [pF] 100 VGS=0V pulsed FORWARD TRANSFER ADMITTANCE : Yfs [S] SOURCE CURRENT : - Is [A] 10 Data Sheet Ta=25℃ VDD= - 6V ID= - 3A RG=10Ω Pulsed 4 3 2 1 0 0 5 10 15 20 TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics 4/5 2009.01 - Rev.A RZF030P01 Data Sheet zMeasurement circuits Pulse Width VGS ID VGS VDS 10% 50% 90% 50% RL 10% D.U.T. VDD RG VDS 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS Qg RL VGS D.U.T. IG(Const.) RG Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveforms zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 2009.01 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 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The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.0