4V Drive Nch MOSFET RSD050N10 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 0.5 9.5 2.5 0.9 1.5 5.5 1.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. 0.75 (1) 0.8Min. 0.65 0.9 2.3 (2) (3) 2.3 0.5 1.0 Applications Switching Packaging specifications Type Package Code Basic ordering unit (pieces) Inner circuit CPT3 TL 2500 ∗1 ∗2 (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Symbol Limits Unit VDSS 100 20 5.0 20 5.0 20 V V A A A A VGSS ID IDP *1 IS *1 Power dissipation ISP PD 15 W Channel temperature Range of storage temperature Tch Tstg 150 55 to +150 °C °C Symbol Rth (ch-c) * Limits 8.33 Unit °C / W *2 *1 ESD Protection Diode *2 Body Diode (1) (2) (3) *1 Pw≦10s, Duty cycle≦1% *2 T c=25°C Thermal resistance Parameter Channel to Case * T c=25C www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. 1/6 2012.02 - Rev.B DataSheet RSD050N10 Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR)DSS Min. Typ. Max. Unit - - ±10 A VGS=±20V, VDS=0V 100 - - V ID=1mA, VGS=0V Conditions IDSS - - 10 A VDS=100V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance - 135 190 * RDS (on) ID=5.0A, VGS=10V - 142 200 m ID=5.0A, VGS=4.5V - 145 205 ID=5.0A, VGS=4.0V Zero gate voltage drain current l Yfs l* 2.5 - - S ID=5.0A, VDS=10V Input capacitance Ciss - 530 - pF VDS=25V Output capacitance Coss - 50 - pF VGS=0V Reverse transfer capacitance Crss - 30 - pF f=1MHz Turn-on delay time td(on)* - 10 - ns ID=2.5A, VDD Rise time tr * td(off)* - 15 - ns VGS=10V - 45 - ns RL=20 tf * - 15 - ns RG=10 Total gate charge Qg * - 14 - nC VDD Gate-source charge Gate-drain charge Qgs * Qgd * - 1.7 3.0 - nC nC ID=5.0A, VGS=10V Forward transfer admittance Turn-off delay time Fall time 50V 50V *Pulsed Body diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit Conditions V Is=5.0A, VGS=0V *Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/6 2012.02 - Rev.B DataSheet RSD050N10 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 5 5 VGS=10.0V 4 4 VGS=4.0V 3 Drain Current : ID [A] Drain Current : ID [A] VGS=3.0V VGS=2.5V 2 VGS=2.5V VGS=4.0V VGS=3.0V VGS=10.0V 3 2 1 1 Ta=25°C pulsed Ta=25°C pulsed 0 0 0 0.2 0.4 0.6 0.8 0 1 2 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 10000 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] VGS=4.0V VGS=4.5V VGS=10V 100 0.01 0.1 1 Ta=125°C Ta=75°C Ta=25°C 1000 Ta=-25°C 100 10 0.01 10 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 10000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 Ta=125°C Ta=75°C Ta=25°C 1000 Ta=-25°C 100 10 0.01 0.1 1 Ta=125°C Ta=75°C Ta=25°C 1000 Ta=-25°C 100 10 0.01 10 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. VGS=4V pulsed 0.1 1 10 Drain Current : ID [A] 3/6 2012.02 - Rev.B DataSheet RSD050N10 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 10 VDS=10V pulsed VDS=10V pulsed 1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 10 Ta=125°C 1 Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C 0.1 Ta=25°C Ta=-25°C 0.01 0.1 0.001 0.01 0.01 0.1 1 0.0 10 0.5 1.0 2.5 3.0 3.5 500 10 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed Ta=125°C Ta=75°C Source Current : Is [A] 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage 1 Ta=25°C Ta=-25°C 0.1 400 ID=5.0A 300 ID=2.5A 200 100 0 0.01 0.0 0.5 1.0 0 1.5 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 10000 10 VDD≒50V VGS=10V RG=10Ω Ta=25°C Pulsed Ta=25°C VDD=50V ID=5A Pulsed 8 Gate-Source Voltage : VGS [V] 1000 tf Switching Time : t [ns] 1.5 Gate-Source Voltage : VGS [V] Drain Current : ID [A] td(off) 100 td(on) 10 6 4 2 tr 1 0 0.01 0.1 1 0 10 10 15 20 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5 4/6 2012.02 - Rev.B DataSheet RSD050N10 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 100 10000 Operation in this area is limited by RDS(on) (VGS = 10V) Ta=25°C f=1MHz VGS=0V 10 Drain Current : ID [ A ] Capacitance : C [pF] 1000 Ciss 100 Coss 10 PW = 100μs 1 PW = 1ms 0.1 Crss Ta=25°C Single Pulse Mounted on a ceramic board. （30mm × 30mm × 0.8mm) PW = 10ms DC Operation 0.01 1 0.01 0.1 1 10 100 0.1 1000 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Tc=25°C Single Pulse Rth(ch-a)=8.33°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/6 2012.02 - Rev.B DataSheet RSD050N10 Measurement circuits Pulse width VGS ID VDS D.U.T. Fig.1-1 Switching time measurement circuit 90% td(off) tr ton tf toff Fig.1-2 Switching waveforms VG ID VDS Qg RL IG(Const.) 10% 90% td(on) VGS 50% 10% VDD RG 90% 50% 10% VGS VDS RL VGS D.U.T. VDD Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2012.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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