TH09/2479 TH97/2478 www.eicsemi.com D20XB20 - D20XB60 SILICON BRIDGE RECTIFIERS RBV25 30 C3 ± 0.2 4.9 ± 0.2 3.9 ± 0.3 FEATURES : Φ 3.2 ± 0.1 20 ± 0.2 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VAC @1 Sec Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free 13.5 ± 0.3 ± 0.5 11 + ~ ~ MECHANICAL DATA : 1.0 10 7.5 ± 0.1 7.5 2.0 ±0.2 ±0.2 ±0.2 * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 0.7 17.5 PRV : 200 - 600 Volts Io : 20 Amperes * * * * * * * * * IATF 0113686 SGS TH07/1033 ± 0.2 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25°C ambient temperature unless otherwise specified. RATING SYMBOL D20XB20 D20XB60 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 600 V Maximum RMS Voltage VRMS 140 420 V Maximum DC Blocking Voltage VDC 200 600 V Maximum Average Forward Current (50Hz Sine wave, R-load) Maximum Peak Forward Surge Current, Tj = 25°C (50Hz sine wave, Non-repetitive 1 cycle peak value) IO 20 (With heatsink, Tc = 87°C) 3.5 (Without heatsink, Ta = 25°C) A IFSM 240 A Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C I 2t 200 AS Maximum Forward Voltage per Diode at IF = 10 A VF 1.1 V Maximum DC Reverse Current, VR=VRRM ( Pulse measurement, Rating of per diode) IR 10 μA Maximum Thermal Resistance, Junction to case RθJC 1.5 (With heatsink) °C/W Maximum Thermal Resistance, Junction to Ambient RθJA 22 (Without heatsink) °C/W TJ 150 °C TSTG - 40 to + 150 °C Operating Junction Temperature Storage Temperature Range Page 1 of 2 2 Rev. 03 : August 20, 2012 TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( D20XB20 - D20XB60 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 PEAK FORWARD SURGE CURRENT, AMPS AVERAGE FORWARD OUTPUT CURRENT, AMPS 30 Sine wave, R-load on heatsink 25 20 15 10 5 0 0 25 50 75 100 125 150 250 200 150 Non-repetitive 100 50 0 175 TJ = 25°C 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION PER DIODE 70 POWER DISSIPATION , WATTS FORWARD CURRENT, AMPS 100 10 1.0 Tc = 25 °C 0.1 Sine wave TJ = 150 °C 60 50 40 30 20 10 0 0 4 8 12 16 20 24 28 AVERAGE RECTIFIED CURRENT, AMPS 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : August 20, 2012