D20XB20 - D20XB60

TH09/2479
TH97/2478
www.eicsemi.com
D20XB20 - D20XB60
SILICON BRIDGE RECTIFIERS
RBV25
30
C3
± 0.2
4.9 ± 0.2
3.9
± 0.3
FEATURES :
Φ
3.2
± 0.1
20
± 0.2
± 0.3
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 VAC @1 Sec
Ideal for printed circuit board
Very good heat dissipation
Pb / RoHS Free
13.5
± 0.3
± 0.5
11
+ ~ ~
MECHANICAL DATA :
1.0
10
7.5
± 0.1
7.5
2.0
±0.2 ±0.2 ±0.2
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
0.7
17.5
PRV : 200 - 600 Volts
Io : 20 Amperes
*
*
*
*
*
*
*
*
*
IATF 0113686
SGS TH07/1033
± 0.2
± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
RATING
SYMBOL
D20XB20
D20XB60
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
200
600
V
Maximum RMS Voltage
VRMS
140
420
V
Maximum DC Blocking Voltage
VDC
200
600
V
Maximum Average Forward Current
(50Hz Sine wave, R-load)
Maximum Peak Forward Surge Current, Tj = 25°C
(50Hz sine wave, Non-repetitive 1 cycle peak value)
IO
20 (With heatsink, Tc = 87°C)
3.5 (Without heatsink, Ta = 25°C)
A
IFSM
240
A
Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C
I 2t
200
AS
Maximum Forward Voltage per Diode at IF = 10 A
VF
1.1
V
Maximum DC Reverse Current, VR=VRRM
( Pulse measurement, Rating of per diode)
IR
10
μA
Maximum Thermal Resistance, Junction to case
RθJC
1.5 (With heatsink)
°C/W
Maximum Thermal Resistance, Junction to Ambient
RθJA
22 (Without heatsink)
°C/W
TJ
150
°C
TSTG
- 40 to + 150
°C
Operating Junction Temperature
Storage Temperature Range
Page 1 of 2
2
Rev. 03 : August 20, 2012
TH09/2479
TH97/2478
www.eicsemi.com
IATF 0113686
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( D20XB20 - D20XB60 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
PEAK FORWARD SURGE CURRENT,
AMPS
AVERAGE FORWARD OUTPUT
CURRENT, AMPS
30
Sine wave, R-load on heatsink
25
20
15
10
5
0
0
25
50
75
100
125
150
250
200
150
Non-repetitive
100
50
0
175
TJ = 25°C
1
CASE TEMPERATURE, ( °C)
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - POWER DISSIPATION
PER DIODE
70
POWER DISSIPATION , WATTS
FORWARD CURRENT, AMPS
100
10
1.0
Tc = 25 °C
0.1
Sine wave
TJ = 150 °C
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
AVERAGE RECTIFIED
CURRENT, AMPS
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 03 : August 20, 2012