AT738

POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - Fax + 39 010 8681180
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
PHASE CONTROL THYRISTOR
AT738
Repetitive voltage up to
Mean on-state current
Surge current
2200 V
3426 A
60 kA
FINAL SPECIFICATION
Sept. 13 - Issue: 4
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
2200
V
V
RSM
Non-repetitive peak reverse voltage
125
2300
V
V
DRM
Repetitive peak off-state voltage
125
2200
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
200
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
200
mA
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
3426
A
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
2622
A
I
TSM
CONDUCTING
Surge on-state current
sine wave, 10 ms
I² t
I² t
without reverse voltage
V
T
On-state voltage
On-state current =
V
T(TO)
Threshold voltage
125
0,92
V
T
On-state slope resistance
125
0,090
mohm
r
125
60,0
18000 x1E3
2000 A
25
1,10
kA
A²s
V
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM, gate 10V 5ohm
125
200
A/µs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 75% of VDRM
125
500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 25V, 10 ohm , tr=5 µs
25
tq
Circuit commutated turn-off time, typical
dv/dt = 20 V/µs linear up to 80% VDRM
Q RR
Reverse recovery charge
di/dt=-20 A/µs, I= 2000 A
3
320
125 .
µs
µs
µC
I
RR
Peak reverse recovery current
VR= 50 V
I
H
Holding current, typical
VD=5V, gate open circuit
25
.
300
mA
A
I
L
Latching current, typical
VD=5V, tp=30µs
25
700
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3,5
V
I
GT
Gate trigger current
VD=5V
25
350
mA
VD=VDRM
125
V
GD
Non-trigger gate voltage, min.
0,25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
P
GM
Peak gate power dissipation
P
G
Average gate power dissipation
R
th(j-c)
Thermal impedance, DC
Junction to case, double side cooled
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T
F
j
Operating junction temperature
Mounting force
Mass
Pulse width 100 µs
5
V
150
W
2
W
MOUNTING
°C/kW
2,0
°C/kW
-30 / 125
40/ 50
1700
ORDERING INFORMATION : AT738 S 22
standard specification
9,0
VDRM&VRRM/100
Page 1 of 4
°C
kN
g
POSEICO
AT738 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
POSEICO SPA
POwer SEmiconductors Italian COrporation
Sept. 13 - Issue: 4
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Th [°C]
130
120
110
100
90
80
70
60
°30
50
°60
°120
°90
°180
DC
40
0
1000
2000
3000
4000
5000
IF(AV) [A]
PF(AV) [W]
7000
DC
180°
6000
120°
90°
60°
30°
5000
4000
3000
2000
1000
0
0
1000
2000
3000
IF(AV) [A]
Page 2 of 4
4000
5000
POSEICO
AT738 PHASE CONTROL THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION
Sept. 13 - Issue: 4
DISSIPATION CHARACTERISTICS
SINE WAVE
Th [°C]
130
120
110
100
90
80
70
60
°30
50
°60
°90
°120
°180
40
0
1000
2000
3000
4000
IF(AV) [A]
PF(AV) [W]
6000
90°
5000
120°
180°
60°
30°
4000
3000
2000
1000
0
0
1000
2000
IF(AV) [A]
Page 3 of 4
3000
4000
POSEICO
AT738 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
POSEICO SPA
POwer SEmiconductors Italian COrporation
Sept. 13 - Issue: 4
SURGE CHARACTERISTIC
Tj = 125 °C
12000
70
10000
60
50
8000
ITSM [kA]
On-state Current [A]
ON-STATE CHARACTERISTIC
Tj = 125 °C
6000
4000
40
30
20
2000
10
0
0
0,6
1,1
1,6
2,1
On-state Voltage [V]
1
10
100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
10
9
Wave
8
Square
Sine
°180
0,63
1,16
∆Rth [°K/kW]
°120
°90
°60
1,09
1,51
2,24
1,59
2,34
3,89
°30
3,79
6,30
Zth j-c [°C/kW]
7
6
5
4
3
2
1
0
0,0001
0,01
1
100
t[s]
𝑛
𝑍𝑡ℎ 𝑗−𝑐 𝑡 =
𝐴𝑖 ∗ 1 − 𝑒
−
𝑡
𝜏𝑖
𝑖=1
i
Ai [°C/kW]
1
6,323
2
1,815
3
0,484
4
0,378
τi [s]
1,8
0,16
0,03
0,001
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Page 4 of 4