ATF530

POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF530
TARGET SPECIFICATION
Repetitive voltage up to
Mean on-state current
Surge current
Turn-off time
2000
1100
15
50
V
A
kA
µs
apr 06 - ISSUE : 0
Symbol
Characteristic
Tj
[°C]
Conditions
BLOCKING
Value
Unit
V
RRM
Repetitive peak reverse voltage
125
2000
V
V
RSM
Non-repetitive peak reverse voltage
125
2100
V
V
DRM
Repetitive peak off-state voltage
125
2000
I
RRM
Repetitive peak reverse current
V=VRRM
125
75
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
75
mA
V
CONDUCTING
I
T (AV)
Mean on-state current
180° sin, 50 Hz,Th=55°C, doubl e side cooled
I
T (AV)
Mean on-state current
180° sin, 1 kHz,Tc=85°C, doub le side cooled
I
TSM
Surge on-state current, non repetitive
sine wave, 10 ms
I² t
I² t
without reverse voltage
V
T
On-state voltage
On-state current =
25
2,25
V
V
T(TO)
Threshold voltage
125
1,30
V
T
On-state slope resistance
125
0,410
mohm
r
1100
125
900
A
15
kA
1125 x1E3
2000 A
A
A²s
SWITCHING
di/dt
Critical rate of rise of on-state current, min
From 50% VDRM
125
800
A/µs
dv/dt
Critical rate of rise of off-state voltage, min
Linear ramp up to 70% of VDRM
125
500
V/µs
td
Gate controlled delay time, typical
VD=VDRM, gate source 20V, 20 ohm , tr=0.1 µs
25
1,5
µs
tq
Circuit commutated turn-off time
125
50
µs
Q rr
Reverse recovery charge
620
µC
300
A
di/dt =
dV/dt =
20
A/µs, I= 1000
I = 800
A
200 V/µs , up to
75%
di/dt =
60
A/µs, I= 1000
I = 1000
A
VR =
50
V
A
VDRM
A
125
I rr
Peak reverse recovery current
I
H
Holding current, typical
VD=5V, gate open circuit
25
500
mA
I
L
Latching current, typical
VD=5V, tp=30µs
25
1000
mA
GATE
V
GT
Gate trigger voltage
VD=6V
25
3,0
V
I
GT
Gate trigger current
VD=6V
25
150
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,3
V
V
FGM
Peak gate voltage (forward)
25
30
V
I
FGM
Peak gate current
25
10
A
V
RGM
Peak gate voltage (reverse)
P
GM
Peak gate power dissipation
P
G(AV)
Average gate power dissipation
Pulse width 100 µs
25
5
V
25
200
W
25
3
W
26
°C/kW
6
°C/kW
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R
th(c-h)
Thermal impedance, DC
Case to heatsink, double side cooled
T
j
Operating junction temperature
F
Mounting force
Mass
-30 / 125
°C
14.0 / 17.0
kN
500
tq code
ORDERING INFORMATION : ATF530 S 20 S
tq code
standard specification
VDRM&VRRM/100
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
g
ATF530 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
apr 06 - ISSUE : 0
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
1800
1000 A
1600
1400
500 A
Qrr [µC]
1200
1000
800
250 A
600
400
200
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
1000
1000 A
800
500 A
600
Irr [A]
250 A
400
200
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
di/dt
IF
ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr
tb
Vr
ATF530 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
apr 06 - ISSUE : 0
SURGE CHARACTERISTIC
Tj = 125 °C
3500
16
3000
14
12
2500
10
ITSM [kA]
On-state Current [A]
ON-STATE CHARACTERISTIC
Tj = 125 °C
2000
1500
1000
8
6
4
500
2
0
0
0,6
1,1
1,6
2,1
2,6
1
10
On-state Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
35
30
Zth j-h [°C/kW]
25
20
15
10
5
0
0,001
0,01
0,1
1
t[s]
10
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
100