POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF530 TARGET SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 2000 1100 15 50 V A kA µs apr 06 - ISSUE : 0 Symbol Characteristic Tj [°C] Conditions BLOCKING Value Unit V RRM Repetitive peak reverse voltage 125 2000 V V RSM Non-repetitive peak reverse voltage 125 2100 V V DRM Repetitive peak off-state voltage 125 2000 I RRM Repetitive peak reverse current V=VRRM 125 75 mA I DRM Repetitive peak off-state current V=VDRM 125 75 mA V CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz,Th=55°C, doubl e side cooled I T (AV) Mean on-state current 180° sin, 1 kHz,Tc=85°C, doub le side cooled I TSM Surge on-state current, non repetitive sine wave, 10 ms I² t I² t without reverse voltage V T On-state voltage On-state current = 25 2,25 V V T(TO) Threshold voltage 125 1,30 V T On-state slope resistance 125 0,410 mohm r 1100 125 900 A 15 kA 1125 x1E3 2000 A A A²s SWITCHING di/dt Critical rate of rise of on-state current, min From 50% VDRM 125 800 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=VDRM, gate source 20V, 20 ohm , tr=0.1 µs 25 1,5 µs tq Circuit commutated turn-off time 125 50 µs Q rr Reverse recovery charge 620 µC 300 A di/dt = dV/dt = 20 A/µs, I= 1000 I = 800 A 200 V/µs , up to 75% di/dt = 60 A/µs, I= 1000 I = 1000 A VR = 50 V A VDRM A 125 I rr Peak reverse recovery current I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=5V, tp=30µs 25 1000 mA GATE V GT Gate trigger voltage VD=6V 25 3,0 V I GT Gate trigger current VD=6V 25 150 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,3 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) P GM Peak gate power dissipation P G(AV) Average gate power dissipation Pulse width 100 µs 25 5 V 25 200 W 25 3 W 26 °C/kW 6 °C/kW MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled R th(c-h) Thermal impedance, DC Case to heatsink, double side cooled T j Operating junction temperature F Mounting force Mass -30 / 125 °C 14.0 / 17.0 kN 500 tq code ORDERING INFORMATION : ATF530 S 20 S tq code standard specification VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ATF530 FAST SWITCHING THYRISTOR TARGET SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation apr 06 - ISSUE : 0 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 1800 1000 A 1600 1400 500 A Qrr [µC] 1200 1000 800 250 A 600 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 1000 1000 A 800 500 A 600 Irr [A] 250 A 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr tb Vr ATF530 FAST SWITCHING THYRISTOR TARGET SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation apr 06 - ISSUE : 0 SURGE CHARACTERISTIC Tj = 125 °C 3500 16 3000 14 12 2500 10 ITSM [kA] On-state Current [A] ON-STATE CHARACTERISTIC Tj = 125 °C 2000 1500 1000 8 6 4 500 2 0 0 0,6 1,1 1,6 2,1 2,6 1 10 On-state Voltage [V] n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 35 30 Zth j-h [°C/kW] 25 20 15 10 5 0 0,001 0,01 0,1 1 t[s] 10 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100