ATF515

POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6445141
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF515
TARGET SPECIFICATION
Repetitive voltage up to
Mean on-state current
Surge current
Turn-off time
1200
1330
16
25
V
A
kA
µs
mag 06 - ISSUE : 06
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
1200
V
V
RSM
Non-repetitive peak reverse voltage
125
1300
V
V
DRM
Repetitive peak off-state voltage
125
1200
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
100
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
100
mA
1330
A
CONDUCTING
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I
T (AV)
Mean on-state current
180° sin, 1 kHz, Th=55°C, double side cooled
I
TSM
Surge on-state current, non repetitive
sine wave, 10 ms
I² t
I² t
without reverse voltage
V
T
On-state voltage
On-state current =
25
1,9
V
T(TO)
Threshold voltage
125
1,20
V
T
On-state slope resistance
125
0,250
mohm
r
125
1255
A
16
kA
1280 x1E3
2000 A
A²s
V
SWITCHING
di/dt
Critical rate of rise of on-state current, min
From 75% VDRM up to 1200 A, gate 10V 5 ohm
125
500
A/µs
dv/dt
Critical rate of rise of off-state voltage, min
Linear ramp up to 75% of VDRM
125
600
V/µs
td
Gate controlled delay time, typical
VD=200V, gate source 20V, 10 ohm , tr=.5 µs
25
0,85
µs
tq
Circuit commutated turn-off time
125
25
µs
Q rr
Reverse recovery charge
230
µC
140
A
di/dt =
dV/dt =
60
A/µs, I= 1000
I = 1000
A
200 V/µs , up to
80%
di/dt =
60
A/µs, I= 1000
I = 1000
A
VR =
50
V
A
VDRM
A
125
I rr
Peak reverse recovery current
I
H
Holding current, typical
VD=5V, gate open circuit
25
mA
I
L
Latching current, typical
VD=12V, tp=30µs
25
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3,5
V
I
GT
Gate trigger current
VD=5V
25
350
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,25
V
V
FGM
Peak gate voltage (forward)
25
30
V
I
FGM
Peak gate current
25
10
A
V
RGM
Peak gate voltage (reverse)
P
GM
Peak gate power dissipation
P
G(AV)
Average gate power dissipation
Pulse width 100 µs
25
5
V
25
150
W
25
3
W
26
°C/kW
MOUNTING
R
th(j-h)
Thermal impedance, DC
T
j
Operating junction temperature
F
Junction to heatsink, double side cooled
Mounting force
Mass
-30 / 125
°C
14.0 / 17.0
kN
500
tq code
ORDERING INFORMATION : ATF515 S 12 L
tq code
standard specification
VDRM&VRRM/100
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
g
ATF515 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 06
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
700
1000 A
600
500
Qrr [µC]
500 A
400
300
250 A
200
100
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
600
1000 A
500
500 A
Irr [A]
400
250 A
300
200
100
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
IF
d i/d t
ta
tb
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr
Vr
ATF515 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 06
SINE WAVE
ENERGY PER PULSE
1000
ITM
Energy [J]
100
10000 A
7000 A
5000 A
3000 A
2000 A
1000 A
10
1
0,1
0,01
10
100
1000
10000
tp [µs]
MAX REPETITION RATE
Th = 85°C
100000
100000
10000
10000
Frequency [Hz]
Frequency [Hz]
Th = 55°C
1000
100
10
1000
100
10
1
1
10
100
1000
tp[µs]
10000
10
100
1000
tp[µs]
10000
ATF515 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 06
TRAPEZOIDAL WAVE 100A/µs
ENERGY PER PULSE
1000
ITM
100
10000 A
7000 A
5000 A
3000 A
2000 A
1000 A
Energy [J]
10
1
0,1
0,01
10
100
1000
10000
tp [µs]
MAX REPETITION RATE
Th = 85°C
100000
100000
10000
10000
Frequency [Hz]
Frequency [Hz]
Th = 55°C
1000
100
10
1000
100
10
1
1
10
100
1000
tp[µs]
10000
10
100
1000
tp[µs]
10000
ATF515 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 06
TRAPEZOIDAL WAVE 500A/µs
ENERGY PER PULSE
1000
ITM
Energy [J]
100
10000 A
7000 A
5000 A
3000 A
2000 A
1000 A
10
1
0,1
0,01
10
100
1000
10000
tp [µs]
MAX REPETITION RATE
Th = 85°C
100000
100000
10000
10000
Frequency [Hz]
Frequency [Hz]
Th = 55°C
1000
100
10
1000
100
10
1
1
10
100
1000
tp[µs]
10000
10
100
1000
tp[µs]
10000
ATF515 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION
mag 06 - ISSUE : 06
SURGE CHARACTERISTIC
Tj = 125 °C
4500
18
4000
16
3500
14
3000
12
ITSM [kA]
On-state Current [A]
ON-STATE CHARACTERISTIC
Tj = 125 °C
2500
2000
10
8
1500
6
1000
4
500
2
0
0
0,6
1,1
1,6
2,1
2,6
1
On-state Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
35
30
Zth j-h [°C/kW]
25
20
15
10
5
0
0,001
0,01
0,1
1
10
100
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
100