Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT(AVM) Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 210 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications • Grid Tied Solar Inverters • Wind Power Inverters • HVDC Power Conversion • Utility Scale Power Conversion • Trigger Circuits/Ignition Circuits Maximum Ratings Parameter Repetitive peak forward voltage Repetitive peak reverse voltage Maximum average on-state current RMS on-state current Operating and storage temperature Symbol VFBM VRBM IT(AVM) IT(RMS) Tj, Tstg Conditions Symbol Conditions Values 6500 50 80 139 -55 to 210 Tj = 25 °C Tj = 25 °C TC ≤ 125 °C TC ≤ 125 °C Unit V V A A °C Electrical Characteristics Parameter Maximum peak on state voltage VKA(ON) Anode-cathode threshold voltage Anode-cathode slope resistance VKA(TO) RAK Leakage current Gate trigger current Holding current Rise time Delay time Reverse recovery charge Recovered charge, 50% chord Reverse recovery current Circuit commutated turn-off time November 2013 IL IGT IH tR tD Qrr Qra Irm tq IK = -80 A, Tj = 25 °C IK = -80 A, Tj = 150 °C Tj = 25 °C (150 °C) Tj = 25 °C (150 °C), IK = -80 A VKA = -6500 V, VGA = 0 V, Tj = 25 °C VKA = -6500 V, VGA = 0 V, Tj = 150 °C Tj = 25 °C, tP = 10 µs Tj = 25 °C IG = -3 A, VKA = -2200 V IK = -80 A, Tj = 25 °C dI/dt = 430 A/us, IK = -70 A, VKA = 20 V dV/dt(re-app) = -460 V/us, Tj = 25 °C http://www.genesicsemi.com/index.php/hit-sic/baredie min. Values max. typ. -3.70 -3.45 -3.0(-2.7) 6.0(6.3) 15 50 -100 tbd 190 50 4.2 2.3 20 10.1 Unit V V mΩ µA mA mA ns ns µC µC A µs Page 1 of 3 Electrical Datasheet GA080TH65-CAU Figure 1: Typical On State Characteristics Figure 2: Typical Forward Blocking Characteristics Figure 5: Typical Turn On Characteristics at 25 °C Figure 6: Typical Turn Off Characteristics at 25 °C Figure 7: Typical Reverse Recovery Characteristics at 25 °C November 2013 http://www.genesicsemi.com/index.php/hit-sic/baredie Page 2 of 3 Electrical Datasheet GA080TH65-CAU Revision History Date 2013/11/07 Revision 1 Comments First generation release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. November 2013 http://www.genesicsemi.com/index.php/hit-sic/baredie Page 3 of 3