HMC383


Design Assistance

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
Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing
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Electrical test & trimming
o Waffle Pack
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Onsite storage, stockholding &
scheduling
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Bespoke 24 Hour monitored
storage systems for secure long
term product support
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On-site failure analysis
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[email protected]
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HMC383
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HMC383
v02.0907
LINEAR & POWER AMPLIFIERS - CHIP
3
Typical Applications
Features
The HMC383 is ideal for use as a driver amplifier for:
Gain: 16 dB
• Point-to-Point Radios
Saturated Output Power: +18 dBm
• Point-to-Multi-Point Radios & VSAT
Output IP3: +25 dBm
• Test Equipment & Sensors
Single Positive Supply: +5V @ 101 mA
• LO Driver for HMC Mixers
50 Ohm Matched Input/Output
• Military & Space
Die Size: 2.26 x 1.35 x 0.1 mm
Functional Diagram
General Description
The HMC383 is a general purpose GaAs PHEMT
MMIC Driver Amplifier which operates between 12
and 30 GHz. The amplifier provides 16 dB of gain
and +18 dBm of saturated power from a +5V supply.
Consistent
gain and output power across the
operating band make it possible to use a common
driver/LO amplifier approach in multiple radio bands.
The HMC383 amplifier can easily be integrated into
Multi-Chip-Modules (MCMs) due to its compact size,
single supply operation, and DC blocked RF I/Os. All
data is measured with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
Electrical Specifi cations, TA = +25° C, Vdd = +5V
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
12 - 18
13
Gain Variation Over Temperature
16
0.03
Typ.
Max.
Min.
18 - 24
14
0.04
17
0.03
Typ.
Max.
Min.
24 - 28
13
0.04
16
0.03
Typ.
Max.
28 - 30
12
0.04
GHz
15
0.03
Units
dB
0.04
dB/ °C
Input Return Loss
14
12
14
7
dB
Output Return Loss
13
12
7
5
dB
16
dBm
18
dBm
dBm
Output Power for 1 dB Compression
(P1dB)
12
15
13.5
16.5
13
16
13
Saturated Output Power (Psat)
18
18
Output Third Order Intercept (IP3)
25
25
24
23
Noise Figure
9
7
6.5
7.5
Supply Current (Idd)
3-2
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
101
125
101
17
125
101
125
101
dB
125
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC383
v02.0907
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
20
20
15
5
0
-5
-10
3
12
8
+25C
+85C
-55C
4
-15
-20
0
8
12
16
20
24
28
32
10
36
12
14
16
FREQUENCY (GHz)
Input Return Loss vs. Temperature
22
24
26
28
30
32
0
+25C
+85C
-55C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
20
Output Return Loss vs. Temperature
0
-10
-15
-20
+25C
+85C
-55C
-5
-10
-15
-20
10
12
14
16
18
20
22
24
26
28
30
32
10
12
14
16
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
26
28
30
32
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
22
22
20
20
18
18
16
16
14
14
Psat (dBm)
P1dB (dBm)
18
FREQUENCY (GHz)
12
10
8
+25C
+85C
-55C
6
4
12
10
8
+25C
+85C
-55C
6
4
2
LINEAR & POWER AMPLIFIERS - CHIP
S21
S11
S22
GAIN (dB)
RESPONSE (dB)
16
10
2
0
0
10
12
14
16
18
20
22
24
FREQUENCY (GHz)
26
28
30
32
10
12
14
16
18
20
22
24
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-3
HMC383
v02.0907
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Power Compression @ 18 GHz
Power Compression @ 30 GHz
Pout (dBm), GAIN (dB), PAE (%)
20
16
Pout (dBm)
Gain (dB)
PAE (%)
12
8
4
0
-18
-14
-10
-6
-2
12
8
4
0
-14
6
-10
-6
2
6
Noise Figure vs. Temperature
12
30
10
NOISE FIGURE (dB)
26
IP3 (dBm)
-2
INPUT POWER (dBm)
Output IP3 vs. Temperature
22
+25C
+85C
-55C
18
14
8
6
4
+25C
+85C
-55C
2
10
0
10
12
14
16
18
20
22
24
26
28
30
10
32
14
18
FREQUENCY (GHz)
22
26
30
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage @ 18 GHz
Reverse Isolation vs. Temperature
20
0
19
ISOLATION (dB)
-20
18
17
16
+25C
+85C
-55C
-40
-60
Gain
P1dB
Psat
15
14
4.5
-80
5
Vdd Supply Voltage (V)
3-4
2
Pout (dBm)
Gain (dB)
PAE (%)
16
INPUT POWER (dBm)
GAIN (dB), P1dB (dBm), Psat (dBm)
LINEAR & POWER AMPLIFIERS - CHIP
3
Pout (dBm), GAIN (dB), PAE (%)
20
5.5
10
12
14
16
18
20
22
24
26
28
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
30
32
HMC383
v02.0907
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+5.5 Vdc
Vdd (V)
Idd (mA)
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
+10 dBm
+4.5
100
Channel Temperature
175 °C
+5.0
101
+5.5
102
Continuous Pdiss (T= 85 °C)
(derate 9.9 mW/°C above 85 °C)
0.89 W
Thermal Resistance
(channel to die bottom)
101.0 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Note: Amplifi er will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3
LINEAR & POWER AMPLIFIERS - CHIP
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-5
HMC383
v02.0907
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Pad Descriptions
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2
Vdd
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
3
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
LINEAR & POWER AMPLIFIERS - CHIP
3
3-6
Interface Schematic
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC383
v02.0907
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
3
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be mounted as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
LINEAR & POWER AMPLIFIERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-7