Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC635 v00.1107 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Applications Features The HMC635 is ideal for: Gain: 19.5 dB • Point-to-Point Radios P1dB: +23 dBm • Point-to-Multi-Point Radios & VSAT Output IP3: +29 dBm • LO Driver for Mixers Saturated Power: +24 dBm @ 15% PAE • Military & Space Supply Voltage: +5V @ 280 mA 50 Ohm Matched Input/Output Die Size: 1.95 x 0.84 x 0.10 mm Functional Diagram General Description The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA Parameter Min. Frequency Range Gain Typ. Max. Min. 18 - 36 16 Gain Variation Over Temperature 19.5 0.045 16 0.060 [1] Typ. Max. 36 - 40 GHz 19 dB 0.045 0.050 dB/ °C Input Return Loss 15 9 dB Output Return Loss 13 12 dB Output Power for 1 dB Compression (P1dB) 19 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 23 14 24 24 Noise Figure Supply Current (Idd1 + Idd2 + Idd3 + Idd4) 29 21 19 dBm 20 dBm 27 dBm 8 7 dB 280 280 mA [1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical. 2 - 58 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 32 20 28 2 S11 S21 S22 5 0 -5 -10 20 16 12 +25 C +85 C -55 C 8 -15 4 -20 -25 0 10 15 20 25 30 35 40 45 16 50 18 20 22 FREQUENCY (GHz) 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -6 +25 C +85 C -55 C -5 +25 C +85 C -55 C -4 RETURN LOSS (dB) RETURN LOSS (dB) -2 -8 -10 -12 -14 -10 -15 -20 -16 -18 -25 16 18 20 22 24 26 28 30 32 34 36 38 40 42 16 18 20 22 FREQUENCY (GHz) 25 24 24 23 23 Psat (dBm) 26 25 22 21 20 19 38 40 42 38 40 42 22 21 20 19 +25 C +85 C -55 C 17 32 34 36 Psat vs. Temperature 26 18 30 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 24 26 28 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 24 10 GAIN (dB) RESPONSE (dB) 15 +25 C +85 C -55 C 18 17 16 16 16 18 20 22 24 26 28 30 32 34 36 FREQUENCY (GHz) 38 40 42 16 18 20 22 24 26 28 30 32 34 36 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 59 HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Power Compression @ 30 GHz Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 30 Pout (dBm) Gain (dB) PAE (%) 25 20 15 10 5 0 -15 -10 -5 0 20 15 10 5 0 -15 10 -10 0 5 10 Noise Figure vs. Temperature 40 15 36 NOISE FIGURE (dB) 12 32 IP3 (dBm) -5 INPUT POWER (dBm) Output IP3 vs. Temperature 28 24 +25 C +85 C -55 C 20 9 6 +25 C +85 C -55 C 3 0 16 16 18 20 22 24 26 28 30 32 34 36 38 40 42 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 30 GHz Reverse Isolation vs. Temperature 0 26 -10 ISOLATION (dB) 24 Gain P1dB Psat 22 20 +25 C +85 C -55 C -20 -30 -40 -50 18 -60 16 4.5 -70 4.6 4.7 4.8 4.9 5 Vdd (V) 2 - 60 5 Pout (dBm) Gain (dB) PAE (%) 25 INPUT POWER (dBm) GAIN (dB), P1dB (dBm), Psat (dBm) DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 Power Compression @ 40 GHz 30 5.1 5.2 5.3 5.4 5.5 16 18 20 22 24 26 28 30 32 34 36 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 38 40 42 HMC635 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) +5.5 Vdc Gate Bias Voltage (Vgg1,Vgg2) -3 to 0 Vdc RF Input Power (RFIN)(Vdd = +5 Vdc) 15 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 16.16 mW/°C above 85 °C) 1.45 W Thermal Resistance (channel to die bottom) 61.87 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 4.5 277 5.0 280 5.5 286 Note: Amplifi er will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP v00.1107 2 - 61 HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Outline Drawing DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 2 - 62 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 3, 4, 5 Vdd1, Vdd2, Vdd3, Vdd4 Power Supply Voltage for the amplifier. See assembly diagram for required external components. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. 7, 8 Vgg2, Vgg1 Gate control for amplifier, please follow “MMIC Amplifier Biasing Procedure” application note. See assembly diagram for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Pad Number 2 - 63 HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Assembly Diagram DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 2 - 64 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 2 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. DRIVER & GAIN BLOCK AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 65