ROHM RB530VM-30

Data Sheet
Schottky Barrier Diode
RB530VM-30
Dimensions (Unit : mm)
0.1±0.1
0.05
0.9MIN.
1.7±0.1
Features
1)Ultra small mold type. (UMD2)
2)High reliability
2.5±0.2
2.1
1.25±0.1
Land size figure (Unit : mm)
0.8MIN.
Applications
General rectification
UMD2
Construction
Silicon epitaxial planer
Structure
0.7±0.2
0.1
0.3±0.05
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
Taping dimensions (Unit : mm)
2.0±0.05
φ1.55±0.05
0.3±0.1
4.0±0.1
1.40±0.1
2.8±0.1
2.75
8.0±0.2
3.5±0.05
1.75±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
Limits
30
30
100
500
150
- 40 to +150
Unit
V
V
mA
mA
°C
°C
Min.
Typ.
Max.
-
-
0.45
V
-
-
0.5
μA
1/4
Unit
Conditions
IF=10mA
VR=10V
2011.09 - Rev.A
Data Sheet
RB530VM-30
100
100000
Ta=125°C
10000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
Ta=125°C
10
Ta=75°C
1
Ta=25°C
0.1
Ta=75°C
1000
Ta=25°C
100
Ta=−25°C
10
Ta=−25°C
0.01
1
0
100
200
300
400
500
600
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
20
370
100
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
10
Ta=25°C
VF=10mA
n=30pcs
360
350
340
AVE:349.1mV
330
1
320
0
5
10
15
20
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
Ta=25°C
VR=10V
n=30pcs
300
200
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
400
Ta=25°C
f=1MHz
VR=0V
n=10pcs
19
18
17
AVE:16.35pF
100
16
AVE:129.0nA
15
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.09 - Rev.A
Data Sheet
RB530VM-30
10
15
1cyc
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
10
AVE:430A
5
0
8.3ms
8.3ms
1cyc
5
0
1
IFSM DISPERSION MAP
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
1000
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Mounted on epoxy board
IFSM
t
5
10
Rth(j-c)
100
10
0.001
0
1
Rth(j-a)
100
0.1
1
10
100
1000
0.01
0.1
0.08
DC
REVERSE POWER
DISSIPATION:PR (W)
FORWARD POWER
DISSIPATION:Pf(W)
0.01
TIME:t(s)
Rth-t CHARACTERISTICS
TIME:t(ms)
IFSM-t CHARACTERISTICS
D=1/2
0.06
Sin(θ=180)
0.04
DC
0.005
D=1/2
0.02
Sin(θ=180)
0
0
0
0.05
0.1
0.15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0.2
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
3/4
2011.09 - Rev.A
0.3
0.3
0A
Io
0V
VR
t
0.2
T
DC
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
RB530VM-30
D=t/T
VR=15V
Tj=150°C
D=1/2
0.1
Sin(θ=180)
0
0A
Io
0V
VR
t
0.2
T
DC
D=t/T
VR=15V
Tj=150°C
D=1/2
0.1
Sin(θ=180)
0
0
25
50
75
100
125
150
0
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
25
4/4
2011.09 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A