Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC6590 www.analog.com www.micross.com HMC6590 v02.1014 Typical Applications Features The HMC6590 is ideal for: • Supports data rates up to 43 Gbps • 40 GbE-FR • Internal DCA feedback with external adjustment option • 40 GBps VSR / SFF • 4 Kohm differential transimpedance gain • Short, intermediate, and long-haul optical receivers • Low-power dissipation < 300 mW • -10.5 dBm optical input sensitivity • +5 dBm optical overload • Small die size: 1.15 mm x 1.21 mm x 0.15 mm transimpedance amplifiers - chip Functional Diagram 1 43 Gbps Transimpedance Amplifier General Description The HMC6590 is a high-speed, high gain, low-power limiting transimpedance amplifier (TIA) used in optical receivers with data rates up to 43 Gbps. It features low input referred noise, 36 GHz bandwidth, 4 kohm differential small signal transimpedance and output cross point adjustment. HMC6590 exhibits an optical input dynamic range between -10 dBm and +5 dBm while maintaining 10e-12 BER at 43 Gbps operation. The HMC6590 is available in die form, includes an on-chip VCC bypass capacitor. It requires only supply decoupling capacitor as external component. The HMC6590 requires a single 3.3V ±5% supply and it typically dissipates less than 300 mW. The device is characterized for operation from –5 °C to +85 °C temperature. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, Norwood, MA 02062 978-250-3343 tel • 978-250-3373 fax • Order online at www.analog.com/hittitemw Application Support: Phone: 978-250-3343 or [email protected] HMC6590 v02.1014 43 Gbps Transimpedance Amplifier Electrical Specifications, TA = +25°C, Vcc = 3.3V Conditions Min. NRZ 43 Max Data Rate Z21 Small Signal Bandwidth[3] Typ. Max. Units Gbps 3 dB cut off z21 3 dB Low Cutoff Frequency 39 GHz 50 KHz KOhm Transimpedance (Z21) Differential @ 100 MHz 4 Group Delay Variation Up to 40 GHz ± 15 psec Differential Output Swing @ 43 Gbps (saturated) 450 mVp-p Input Referred RMS Noise Up to 35 GHz 3.3 uA pA/√Hz Input Referred Noise Densitiy. RMS noise per 35 GHz 20 Optical Input Sensitivity[1] (OMA) Responsivity = 0.65A/W, ER = 9 dB -10.5 dBm Optical Overload Power[2] (OMA) Responsivity = 0.65 A/W, ER = 9dB +5 dBm Input Overload Current 4 Output Return Loss (S22) Additive RMS Jitter mAp-p Up to 40 Ω GHz -10 dB 40 Gbps 1010... stream 0.5 ps Input DC Voltage Internally generated Operational Supply Voltage Range 1.2 ± 5% Supply Current 3.15 V 3.3 Vcc = 3.3V 3.45 V 94 Operating Temperature Range (Die backside) mA -5 +85 °C [1] Sensitivity depends on photo diode, packaging, BERT sensitivity, input eye quality and optical coupling. [2] Vovlcnt= 1.7V [3] 50 Ω on wafer measurement results. Group Delay @ VCC = 3.3V [1] Output Return Loss @ VCC = 3.3V [1] 120 + terminal - terminal -10 GROUP DELAY (ps) OUTPUT RETURN LOSS (dB) -5 -15 -20 -25 + terminal 100 80 60 - terminal -30 0 5 10 15 20 25 30 35 40 45 40 50 0 5 10 15 FREQUENCY (GHz) 20 25 30 35 40 45 50 FREQUENCY (GHz) Transimpedance vs Frequency over Supply [2] TRANSIMPEDANCE (dBOhm) 80 70 60 50 40 [1] 50 Ω on wafer measurement results . [2] Assumes photo diode and assembly model on page 3. 3.13V 3.30V 3.47V 0 5 10 15 20 25 30 35 40 45 transimpedance amplifiers - chip Parameter 50 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, Norwood, MA 02062 978-250-3343 tel • 978-250-3373 fax • Order online at www.analog.com/hittitemw Application Support: Phone: 978-250-3343 or [email protected] 2 HMC6590 v02.1014 43 Gbps Transimpedance Amplifier Photo Diode Model and Assembly Assumptions Photo diode and assembly diagram model used in Z21 and input referred noise density calculations: • • • • • • CPD = 50 fF RS = 15 Ω LPD+LIN = 0.35 nH LOUT = 0.25 nH LGND = 0.25 nH LVDD = 0.25 nH transimpedance amplifiers - chip Assembly Diagram for Using Integrated Photo Diode Supply VPD 3 Suggested assembly configuration for using internal supply for photo-diode. Suggested bond-wire length for optimum performance is as follows: • LPD + LIN < 0.35 mm • LOUT < 0.25 mm (double-bond is recommended) • LGND < 0.25 mm (double-bond for larger pads) • LVCC < 0.25 mm (double-bond is recommended) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, Norwood, MA 02062 978-250-3343 tel • 978-250-3373 fax • Order online at www.analog.com/hittitemw Application Support: Phone: 978-250-3343 or [email protected] HMC6590 v02.1014 43 Gbps Transimpedance Amplifier Suggested assembly configuration for separate photo diode supply. Suggested bond-wire length for optimum performance is as follows: • LPD + LIN < 0.35 mm • LOUT < 0.25 mm (double-bond is recommended) • LGND < 0.25 mm (double-bond for larger pads) • LVCC < 0.25 mm (double-bond is recommended) Application Circuit For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, Norwood, MA 02062 978-250-3343 tel • 978-250-3373 fax • Order online at www.analog.com/hittitemw Application Support: Phone: 978-250-3343 or [email protected] transimpedance amplifiers - chip Assembly Diagram for Separate Photo Diode Supply 4 HMC6590 v02.1014 Absolute Maximum Ratings Voltage level at the RF input (Vin) -0.6V to 2.5V Current level at the RF input (In) 0 to 10 mA Voltage level at the RF output VCC-1 to VCC+1 Supply Voltage (VCC) -0.6V to 3.75V Max. Junction Temperature 125 °C Continuous Pdiss (T=85°C) (Derate 30.23 mW/°C above 85°C) 1.21 W Thermal Resistance Rth (Junction to die bottom) 33.08 °C/W Storage Temperature -55 to +125 °C Operating Temperature (Die backside) ESD Sensitivity Level (HBM) transimpedance amplifiers - chip Die Packaging Drawing [1] Standard Alternate GP-1 (Gel Pack) [2] [1] F or more information refer to the “Packaging Information” Document in the Product Support Section of our website . [2] For alternate packaging information contact Hittite Microwave Corporation. Die Pads Dimensions Pads Pad Size 1,23,24 0.0047[0.120] X 0.0033[0.085] -5 to +85 °C 2 0.0033[0.085] X 0.0043[0.110] Class 0 (>150V) 3-6,16-20 0.0033[0.085] X 0.0051[0.130] 7 0.0033[0.085] X 0.0039[0.100] 8,9,12,13,22 0.0051[0.130] X 0.0033[0.085] 10,11 0.0040[0.101] X 0.0033[0.085] 14 0.0033[0.085] X 0.0093[0.100] 15 0.0033[0.085] X 0.0047[0.120] 21 0.0098[0.250] X 0.0033[.085] ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 43 Gbps Transimpedance Amplifier NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .006” 3. BOND PAD METALIZATION: ALUMINUM 4. NO BACKSIDE METAL 5. OVERALL DIE SIZE ±.002” 5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, Norwood, MA 02062 978-250-3343 tel • 978-250-3373 fax • Order online at www.analog.com/hittitemw Application Support: Phone: 978-250-3343 or [email protected] HMC6590 v02.1014 43 Gbps Transimpedance Amplifier Pad Descriptions Function Description 1,2,3,5,7,8,10 23,26 GND1 Ground connection for TIA. 4 IN TIA input. 6 VPD Provides bias voltage for photo-diode (PD) through a 50 Ω resistor/capacitor network from VCC1. 9 VCC1 Power supply for input stage and PD. 11,12,14,15,17 19-22,25 GND2 Ground connection for TIA. 13 VCC2 Power supply for output buffers. 16 OUTP Non-inverted data output with 50 Ω back termination. 18 OUTN Inverted data output with 50 Ω back termination. 22 DCA DC offset control. Voltage at this pad sets output DC offset. When it is floating, DC offset is at 0V. VOVLCNT Overload current compensation control. Voltage at this pad sets the strength of the input overload current control. When it is floating, overload control is set to nominal(VCC1/2). Overload performance can be optimized by adjusting VOVLCNT voltage between 1.6V - 3.3V . 24 Interface Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, Norwood, MA 02062 978-250-3343 tel • 978-250-3373 fax • Order online at www.analog.com/hittitemw Application Support: Phone: 978-250-3343 or [email protected] transimpedance amplifiers - chip Pad Number 6 HMC6590 v02.1014 43 Gbps Transimpedance Amplifier Mounting & Bonding Techniques for MMICs The die should be attached directly to the ground plane with epoxy (see HMC general Handling, Mounting , Bonding Note). 50 Ω Microstrip transmission lines on 0.254 mm (10 mil) thick alumina thin film substrates are recommended for bringing high speed differential signal from the chip RF to and from the chip (Figure 1). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076 mm to 0.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. transimpedance amplifiers - chip Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. 7 Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: The chip may be handled by a vacuum collet or with a pair of sharp tweezers. Mounting Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, Norwood, MA 02062 978-250-3343 tel • 978-250-3373 fax • Order online at www.analog.com/hittitemw Application Support: Phone: 978-250-3343 or [email protected]